Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3717PBF

Name: IRF3717PBF
Brand: Infineon Technologies
SKU: IRF3717PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF3717PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF3717PBF.pdf

Description:: MOSFET N-CH 20V 20A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,805

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF3717PBF from Infineon Technologies is a 20V, 20A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, featuring 3.7 mΩ R_DS(on) at V_GS = 10 V, 22 nC total gate charge, and fully characterized unclamped inductive avalanche capability. It serves as a synchronous rectifier FET in high-frequency DC-DC converters for notebook CPU core power delivery.

For engineers reviewing the IRF3717PBF datasheet, IRF3717PBF pinout, IRF3717PBF application, or IRF3717PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 13–19 nC), and SO-8 thermal performance under pulsed load conditions.

Technical Context

This MOSFET is optimized for synchronous buck converter output stages where fast switching, low conduction loss, and robust body diode recovery are critical. Its 3.7 mΩ R_DS(on) at 10 V and 4.8 mΩ at 4.5 V enables high-efficiency operation at 1–2 MHz switching frequencies with 16 A continuous drain current at T_A = 70 °C.

The device integrates a co-packaged integral p-n junction body diode with t_rr = 22–32 ns and Q_rr = 13–19 nC, enabling clean commutation in hard-switched topologies. Its Q_gd = 7.3 nC and Q_gd/Q_gs1 ≈ 1.1 ratio helps suppress C_dv/dt-induced turn-on during high dV/dt node transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient overshoot margins in notebook VRMs.
R_DS(on) max @ V_GS = 10 V	4.4 mΩ - Enables ≤140 mW conduction loss at 20 A DC, critical for thermally constrained SO-8 footprint.
Q_g total	33 nC - Determines gate driver current demand and switching loss contribution in 1–2 MHz converters.
Q_rr	19 nC max - Directly impacts shoot-through risk and loss redistribution to control FET in synchronous rectification.
t_rr	32 ns max - Limits reverse recovery time window during high di/dt commutation in multiphase CPU supplies.
R_θJA	50 °C/W - Defines maximum power dissipation (1.6 W) at T_A = 70 °C before exceeding 150 °C junction limit.
E_AS	32 mJ - Specifies single-pulse avalanche energy handling capability for inductive fault protection.

Pinout & Package

IRF3717PBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal conduction. The package supports hand-soldering and reflow profiles per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven parallel drain terminals tied to internal die drain metallization and exposed pad - primary current path and thermal conduction path to PCB copper.
6	Gate (G)	Control terminal requiring <20 V absolute max drive; 22 nC total charge dictates gate resistor sizing for dV/dt control.
Source (S)	Source (S)	Terminals 1–5 and 7–8 are internally connected to source; provides low-inductance return path for synchronous rectifier current and gate drive loop closure.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.7 mΩ typ. @ V_GS = 10 V reduces conduction loss by >30% vs. legacy 20 V MOSFETs in 16 A VRM phases.
Fully characterized avalanche	32 mJ E_AS rating validated per JEDEC JESD24-11 ensures reliable operation during inductive fault transients without derating.
Optimized body diode	Q_rr = 13–19 nC and t_rr = 22–32 ns minimize reverse recovery loss and cross-conduction risk in synchronous buck topologies.
Low gate charge ratio	Q_gd/Q_gs1 ≈ 1.1 limits Miller-induced turn-on during high dV/dt node swings in multiphase CPU regulators.

Applications

Notebook CPU Core VRM

Server DDR Memory Regulator

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to Intel/AMD mobile processors at up to 100 A peak.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in complementary phase with control FET; switches at 1–2 MHz with 50–100 ns dead time.

Use Value: 4.4 mΩ R_DS(on) and 19 nC Q_rr reduce output stage loss by 18% versus prior-generation 20 V MOSFETs, improving VRM efficiency from 89% to 91.5% at 50 A.

Use Scenario: Point-of-load regulator delivering 1.2 V to DDR4/DDR5 memory modules in enterprise servers with tight thermal envelopes.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 3+1 phase topology; subjected to 100 A peak pulsed current and rapid load transients.

Use Value: SO-8 thermal resistance (R_θJA = 50 °C/W) and 160 A pulsed current rating enable stable operation at 70 °C ambient without forced airflow.

Networking DC-DC Converter

Industrial FPGA Power Supply

Use Scenario: Isolated forward or active-clamp forward converter supplying 3.3 V/5 V to network switch ASICs with strict ripple and transient response requirements.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier; commutates at 300–500 kHz with body diode conducting during dead time.

Use Value: 1.0 V V_SD body diode forward voltage and 32 ns t_rr minimize conduction loss and ringing during zero-voltage switching transitions.

Use Scenario: Non-isolated buck converter powering Xilinx/Intel FPGA core logic (0.85–1.2 V) in programmable logic controllers with extended temperature range (-40 to +85 °C).

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier operating across full industrial temperature range; gate threshold stability (ΔV_GS(th)/ΔT_J = −5.4 mV/°C) maintains consistent turn-on behavior.

Use Value: R_DS(on) increase of only 1.5× from 25 °C to 125 °C ensures predictable conduction loss across operating range, simplifying thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR466DP	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 29 nC; SO-8 with enhanced thermal pad	Lower R_DS(on) improves conduction loss but higher C_iss (3200 pF) increases gate drive loss at >1.5 MHz	Preferred for fixed 12 V input, low-frequency (<1 MHz) VRMs where thermal margin is critical
IPB011N03L	R_DS(on) = 1.1 mΩ @ 10 V; TO-263 package; 3× larger footprint and thermal mass	Superior R_DS(on) and P_D but incompatible with SO-8 board layout and automated assembly	Only viable if redesigning PCB and accepting longer lead times for TO-263 sourcing

Compared with SiR466DP and IPB011N03L, IRF3717PBF offers optimal balance of SO-8 compatibility, 4.4 mΩ R_DS(on), and 33 nC Q_g for space-constrained, high-frequency notebook and networking VRMs where layout reuse and thermal management are prioritized over marginal R_DS(on) reduction.

Availability

IRF3717PBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, server DDR memory regulators, and isolated DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF3717PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRF3717PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and robust avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current at 70 °C ambient?

The IRF3717PBF supports 16 A continuous drain current at T_A = 70 °C with no heatsink, based on its 50 °C/W junction-to-ambient thermal resistance and 150 °C maximum junction temperature. This rating assumes SO-8 mounting on 1-in² 2-oz copper with 2 thermal vias under the exposed drain pad.

Does IRF3717PBF have a qualified lead-free finish?

Yes, IRF3717PBF features a 100% matte tin lead finish compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). The "PbF" suffix explicitly denotes lead-free packaging, and the device is qualified for standard SnPb and lead-free reflow profiles.

Can IRF3717PBF be driven directly from a 3.3 V microcontroller GPIO?

No - its gate threshold voltage (V_GS(th)) ranges from 1.55 V to 2.45 V, but full enhancement requires ≥4.5 V for acceptable R_DS(on). At 3.3 V, R_DS(on) exceeds 10 mΩ, doubling conduction loss. A dedicated gate driver (e.g., IRF7103) or level-shifting circuit is required for reliable 20 A operation.

How is the SO-8 exposed drain pad electrically connected?

The exposed drain pad on the IRF3717PBF SO-8 package is internally bonded to all seven drain pins (1, 2, 3, 4, 5, 7, 8) and forms the primary thermal and electrical path for drain current. It must be soldered to a large PCB copper pour connected to the system ground or power plane to achieve rated R_θJA and current capacity.

IRF3717PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2890 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF3717PBF FAQ

1.How can I place an order for IRF3717PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3717PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3717PBF reliable?

The price and inventory of IRF3717PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3717PBF is usually 5 days.

3.What payment methods are accepted for IRF3717PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3717PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3717PBF?

IRF3717PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3717PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3717PBF?

For technical support, including IRF3717PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3717PBF requirements.

6.How does Aetrix verify that IRF3717PBF is sourced from the original manufacturer or authorized distributors?

All IRF3717PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3717PBF meets industry standards.

7.What is the process for return or replacement of IRF3717PBF?

All IRF3717PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3717PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3717PBF part is unused and in its original packaging.

Return procedure for IRF3717PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…