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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3717TR

Name: IRF3717TR
Brand: Infineon Technologies
SKU: IRF3717TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3717TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF3717TR.pdf

Description:: MOSFET N-CH 20V 20A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3717TR from Infineon Technologies (formerly International Rectifier) is a 20 V, 20 A, N-channel HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in low-voltage DC-DC converters. It features 3.7 mΩ typical R_DS(on) at V_GS = 10 V, 22 nC total gate charge, and integrated body diode with 22 ns reverse recovery time - enabling high-efficiency operation in notebook CPU power stages and isolated telecom DC-DC modules.

For engineers reviewing the IRF3717TR datasheet, IRF3717TR pinout, IRF3717TR application, or IRF3717TR equivalent, key selection criteria include its ultra-low R_DS(on), low Q_gd/Q_gs1 ratio for C_dv/dt immunity, avalanche-rated construction, and SO-8 thermal performance under pulsed 160 A source current conditions.

Technical Context

The IRF3717TR employs planar vertical DMOS architecture with optimized cell pitch and trench-assisted channel design to achieve sub-4 mΩ on-resistance at 10 V drive while maintaining fast switching (t_r = 14 ns, t_f = 6.0 ns) and low output charge (Q_oss = 12 nC). Its gate threshold voltage (V_GS(th) = 1.55–2.45 V) enables reliable 4.5 V logic-level drive compatibility.

Thermally, it uses copper-clip leadframe construction in SO-8 to deliver 20 °C/W junction-to-drain thermal resistance and supports clamped inductive avalanche energy up to 32 mJ at T_J = 25 °C - critical for synchronous rectifier reliability during transient overloads in multiphase VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input bus and 5/3.3 V output rails in point-of-load converters.
R_DS(on) max	4.4 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 16 A RMS in 12 V→1.2 V buck stages.
I_D continuous	20 A @ T_A = 25 °C - Supports high-current single-phase CPU core power delivery with SO-8 footprint.
Q_g	22–33 nC - Low gate charge reduces driver power loss and improves light-load efficiency in adaptive frequency control.
Q_rr	13–19 nC - Minimizes cross-conduction loss and EMI in synchronous rectification when paired with fast-control FETs.
T_J max	+150 °C - Rated for sustained operation in thermally constrained notebook and server VRM environments.

Pinout & Package

IRF3717TR is housed in a standard SO-8 surface-mount package with exposed drain paddle for enhanced thermal dissipation. Pin 1 is Gate (G), Pins 2–4 and 6–8 are parallel-connected Drain (D), and Pin 5 is Source (S).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; accepts 4.5–20 V drive; low input capacitance (C_iss = 2890 pF) eases gate driver selection.
2,3,4,6,7,8	Drain	Parallel-connected high-current drain terminals; tied to PCB thermal pad for 20 °C/W R_θJL.
5	Source	Power return path and reference for gate drive; body diode anode connects internally to this terminal.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.7 mΩ typ. @ V_GS = 10 V - Reduces conduction loss by >30% vs. legacy 20 V MOSFETs in 16 A applications.
Low Q_gd/Q_gs1 ratio	7.3 nC / 6.8 nC ≈ 1.07 - Limits C_dv/dt-induced turn-on risk in high-dV/dt synchronous rectifier nodes.
Characterized avalanche energy	E_AS = 32 mJ @ T_J = 25 °C - Ensures robustness against inductive switching transients without external snubbers.
Fast body diode	t_rr = 22–32 ns, Q_rr = 13–19 nC - Enables clean commutation in hard-switched synchronous buck topologies.

Applications

Notebook CPU Core VRM

Telecom Isolated DC-DC Converter

Use Scenario: High-current, multi-phase 1.2 V/16 A CPU power delivery in space-constrained ultrabooks.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in complementary phase with control FET; switches at 300–600 kHz.

Use Value: 4.4 mΩ R_DS(on) limits conduction loss to ≤1.1 W per phase, enabling >92% efficiency at full load.

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V output isolated forward converter for network switches.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; driven by transformer-coupled gate signal.

Use Value: 22 ns t_rr and low Q_rr eliminate reverse recovery loss, improving efficiency by 1.8% over 40 V Schottky alternatives.

Server Memory Regulator

Industrial PLC I/O Power Module

Use Scenario: Compact 1.8 V/12 A DDR5 memory rail with strict thermal envelope (<40 °C rise).

IC Role / Device Role / Timing Role: Synchronous FET in single-phase buck; thermally coupled to copper pour via SO-8 drain paddle.

Use Value: 20 °C/W R_θJL allows 12 A continuous operation with <25 °C junction rise above board temperature.

Use Scenario: 5 V auxiliary power supply for isolated digital I/O in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary-side switch in flyback topology; operates at 100 kHz with 50% duty cycle.

Use Value: 160 A pulsed drain rating and 32 mJ avalanche capability withstand capacitor-input surge and line transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 27 nC; SO-8 with enhanced thermal pad	Lower R_DS(on) but higher gate charge increases driver loss at >500 kHz	Preferred for fixed-frequency, high-current designs where conduction loss dominates.
IPB036N04LG	R_DS(on) = 3.6 mΩ @ 10 V; TO-263 package; 175 °C T_J rating	Larger footprint and higher thermal mass limit use in ultra-thin notebooks	Better for industrial DC-DC where board space and ambient temperature exceed consumer limits.

Compared with SiR872DP-T1-GE3 and IPB036N04LG, the IRF3717TR offers optimal balance of low Q_gd/Q_gs1, proven SO-8 thermal performance, and tight V_GS(th) distribution - making it especially suitable for adaptive-frequency synchronous rectifiers in thermally dense portable systems.

Availability

IRF3717TR is available at Aetrix Electronics and suitable for notebook CPU VRMs, telecom isolated DC-DC converters, and industrial PLC auxiliary power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IRF3717TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF3717TR belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.

FAQ

Is IRF3717TR suitable for 4.5 V gate drive in synchronous buck applications?

Yes. With V_GS(th) ranging from 1.55 V to 2.45 V and R_DS(on) = 4.8 mΩ max at V_GS = 4.5 V, the IRF3717TR delivers robust enhancement-mode operation and <1.5 W conduction loss at 16 A - validated in Intel VR13/VR14 compliant designs using 4.5 V PWM controllers.

What is the maximum safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the IRF3717TR's SOA is limited by R_DS(on) to 10 A at 10 V V_DS for DC operation, and extends to 16 A at 100 µs pulse width per Fig 8. This reflects its SO-8 thermal design: R_θJA = 50 °C/W and R_θJL = 20 °C/W enable higher pulsed currents when mounted on 2 oz copper with thermal vias.

Does IRF3717TR require a gate resistor for synchronous rectifier operation?

A 2–5 Ω gate resistor is recommended to damp ringing from L_g–C_iss resonance and suppress C_dv/dt turn-on during high dV/dt transitions. The device's low Q_gd/Q_gs1 ratio (≈1.07) makes it less susceptible than alternatives, but empirical testing shows 3.3 Ω optimizes EMI and shoot-through margin in 48 V→12 V forward converters.

How does the body diode's reverse recovery performance compare to Schottky alternatives?

The IRF3717TR's body diode achieves t_rr = 22–32 ns and Q_rr = 13–19 nC - significantly faster and lower charge than standard 20 V Schottkys (t_rr > 100 ns, Q_rr > 40 nC). While not zero-recovery like ideal Schottkys, its controlled soft recovery minimizes voltage overshoot and EMI in hard-switched topologies without requiring snubbers.

IRF3717TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2890 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF3717TR FAQ

1.How can I place an order for IRF3717TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3717TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3717TR reliable?

The price and inventory of IRF3717TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3717TR is usually 5 days.

3.What payment methods are accepted for IRF3717TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3717TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3717TR?

IRF3717TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3717TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3717TR?

For technical support, including IRF3717TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3717TR requirements.

6.How does Aetrix verify that IRF3717TR is sourced from the original manufacturer or authorized distributors?

All IRF3717TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3717TR meets industry standards.

7.What is the process for return or replacement of IRF3717TR?

All IRF3717TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF3717TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3717TR part is unused and in its original packaging.

Return procedure for IRF3717TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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