Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3717TRPBF

Name: IRF3717TRPBF
Brand: Infineon Technologies
SKU: IRF3717TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF3717TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF3717TRPBF.pdf

Description:: MOSFET N-CH 20V 20A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,291

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF3717TRPBF from Infineon Technologies is a 20 V, 20 A, 3.7 mΩ (typ) N-channel HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in low-voltage DC-DC converters for notebook CPU power delivery and networking equipment. It features ultra-low gate impedance, fully characterized avalanche capability (32 mJ), and 1.0 V body diode forward voltage at 16 A.

For engineers reviewing the IRF3717TRPBF datasheet, IRF3717TRPBF pinout, IRF3717TRPBF application, or IRF3717TRPBF equivalent, key selection criteria include R_DS(on) at 4.5 V (≤5.7 mΩ), Q_gd/Q_gs1 ratio (≤1.07), reverse recovery charge Q_rr (13–19 nC), and thermal resistance R_θJA (50 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integral body diode, designed for high-frequency synchronous rectification where low conduction loss and controlled switching behavior are critical. Its gate threshold voltage (1.55–2.45 V) and negative temperature coefficient (−5.4 mV/°C) enable stable turn-on across −55 to +150 °C junction range.

It operates in hard-switched clamped-inductive and unclamped inductive avalanche conditions, with validated single-pulse avalanche energy of 32 mJ at T_J = 25 °C and 16 A I_AS. The device's C_iss/C_oss/C_rss values (2890/930/430 pF @ V_DS = 10 V) support precise gate drive design for ZVS/ZCS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and 19 V transient spikes in notebook VRMs.
R_DS(on) max @ V_GS = 10 V	4.4 mΩ - Enables ≤1.76 W conduction loss at 20 A DC, critical for >90% efficiency in 1–2 MHz buck converters.
Q_gd	7.3 nC - Low gate-drain charge minimizes C_dv/dt turn-on risk during high dV/dt node transitions in synchronous FET position.
Q_rr	13–19 nC - Quantified reverse recovery charge directly impacts shoot-through loss and EMI in non-isolated DC-DC stages.
R_θJA	50 °C/W - Specifies thermal limit for SO-8 PCB layout with standard 1-in² copper pour; derates linearly above 25 °C ambient.
E_AS	32 mJ - Validated single-pulse avalanche energy supports robustness against inductive switching transients without external snubbers.
V_SD	1.0 V @ I_S = 16 A - Body diode forward voltage determines freewheeling loss when synchronous FET is off during dead time.

Pinout & Package

IRF3717TRPBF is housed in a surface-mount SO-8 (Small Outline-8) package with exposed drain pad for enhanced thermal performance. Pin 1 is Gate, Pins 2–4 and 6–8 are Drain (internally paralleled), Pin 5 is Source.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≥4.5 V drive for full enhancement; low Q_g (22–33 nC) enables fast switching with minimal driver power.
2,3,4,6,7,8 (D)	Drain	High-current output node; all six pins internally connected to die drain; must be routed to high-current paths and thermal pad.
5 (S)	Source	Reference node for gate drive and current sensing; tied to power ground plane; low-inductance connection essential for stability.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.7 mΩ typ @ V_GS = 10 V reduces conduction loss by >30% vs. legacy 5–6 mΩ SO-8 MOSFETs in 12 V input applications.
Fully characterized avalanche	32 mJ E_AS at 25 °C verified per JEDEC JESD24-11, enabling reliable operation under unclamped inductive switching stress.
Low Q_gd/Q_gs1 ratio	≤1.07 (7.3/6.8 nC) suppresses C_dv/dt induced turn-on, reducing shoot-through risk in high-side synchronous rectifier configurations.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020D reflow profile; qualified for peak temperatures up to 260 °C, supporting automated SMT assembly.

Applications

Notebook CPU Voltage Regulator Module (VRM)

Server DDR Memory Power Supply

Use Scenario: High-efficiency 1–2 MHz buck converter delivering 1.0–1.5 V @ up to 100 A to Intel/AMD mobile processors.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in continuous conduction mode (CCM), commutated at 100% duty cycle during light load.

Use Value: 3.7 mΩ R_DS(on) and 1.0 V V_SD reduce total power loss by 1.2 W vs. Schottky diode solution, improving thermal margin by 8 °C.

Use Scenario: Dual-phase 1.2 V output supply for DDR4/DDR5 memory subsystems in enterprise servers.

IC Role / Device Role / Timing Role: Low-side synchronous FET in interleaved buck stage, switching at 500 kHz with 100 ns dead time.

Use Value: Q_rr = 13–19 nC ensures clean body diode commutation, limiting cross-conduction loss to <0.3 W per phase.

Networking DC-DC Isolated Converter

Industrial PoE+ Midspan Power Stage

Use Scenario: Secondary-side synchronous rectifier in 48 V input, 12 V output flyback or forward converter for telecom line cards.

IC Role / Device Role / Timing Role: Output rectifier FET synchronized to primary-side controller via isolated gate driver signal.

Use Value: 20 A ID rating and 50 °C/W R_θJA allow 12 A continuous operation on 2-layer PCB without heatsink.

Use Scenario: 57 V input, 54 V output active clamp forward converter supplying up to 90 W to IEEE 802.3at PoE+ endpoints.

IC Role / Device Role / Timing Role: Primary-side switch operating in active-clamp topology with 100 ns minimum off-time.

Use Value: 20 V V_DS rating provides 3 V margin over 19 V clamp voltage, ensuring safe operation during transient overvoltage events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3717PbF	R_DS(on) max = 5.3 mΩ @ V_GS = 4.5 V; higher Q_gd (8.5 nC); same SO-8 package.	Optimized for 4.5 V gate drive; less suitable for 3.3 V logic-level control in modern VRMs.	Select when gate drive voltage is limited to 4.5 V and avalanche robustness is secondary.
SiR426DP	R_DS(on) = 3.2 mΩ @ V_GS = 10 V; lower Q_gd (5.1 nC); PowerPAK SO-8 package with improved R_θJA (40 °C/W).	Superior thermal performance and lower switching losses, but not drop-in due to different pinout (Drain/Sources rearranged).	Choose for new designs requiring higher efficiency and thermal headroom; requires PCB redesign.

Compared with IRL3717PbF and SiR426DP, IRF3717TRPBF offers the best balance of low R_DS(on), validated avalanche capability, and SO-8 pin compatibility for legacy VRM upgrades-while maintaining tighter Q_gd/Q_gs1 control than IRL3717PbF and avoiding layout changes required by SiR426DP.

Availability

IRF3717TRPBF is available at Aetrix Electronics and suitable for notebook VRMs, server memory power supplies, networking DC-DC converters, and industrial PoE+ midspans requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF3717TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRF3717TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification in low-voltage DC-DC conversion systems where R_DS(on), Q_g, and avalanche ruggedness are co-optimized.

FAQ

What is the maximum continuous drain current for IRF3717TRPBF at 70°C ambient?

The maximum continuous drain current is 16 A at T_A = 70 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This assumes SO-8 mounting on a standard FR-4 PCB with 1-in² copper pour and no forced airflow. Derating follows the linear factor of 0.02 W/°C above 70 °C ambient.

Does IRF3717TRPBF support 4.5 V gate drive in synchronous rectifier applications?

Yes-R_DS(on) is guaranteed ≤5.7 mΩ at V_GS = 4.5 V, enabling full enhancement in 5 V and 4.5 V logic-driven synchronous rectifiers. However, Q_g increases to ~28 nC at 4.5 V, requiring appropriate gate driver current capability (≥2 A peak) to maintain switching speed.

How is the body diode reverse recovery charge (Q_rr) measured for this MOSFET?

Q_rr is measured under standardized unclamped inductive test conditions: I_S = 16 A, di/dt = 100 A/µs, V_DD = 10 V, T_J = 25 °C and 125 °C. Values of 13–19 nC reflect the integrated charge during reverse recovery, directly impacting shoot-through loss when used as a synchronous rectifier.

Can IRF3717TRPBF replace IRF3710 in an existing SO-8 design?

No-IRF3710 is a 100 V, 57 A MOSFET with significantly higher R_DS(on) (28 mΩ) and different thermal and switching characteristics. IRF3717TRPBF is not a voltage-compatible replacement; it is intended only for 20 V systems. Substitution would risk catastrophic failure under 100 V bus conditions.

IRF3717TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2890 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF3717TRPBF FAQ

1.How can I place an order for IRF3717TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3717TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3717TRPBF reliable?

The price and inventory of IRF3717TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3717TRPBF is usually 5 days.

3.What payment methods are accepted for IRF3717TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3717TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3717TRPBF?

IRF3717TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3717TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3717TRPBF?

For technical support, including IRF3717TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3717TRPBF requirements.

6.How does Aetrix verify that IRF3717TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF3717TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3717TRPBF meets industry standards.

7.What is the process for return or replacement of IRF3717TRPBF?

All IRF3717TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3717TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3717TRPBF part is unused and in its original packaging.

Return procedure for IRF3717TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.