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Infineon Technologies IRF3805L-7PPBF

Part No.:
IRF3805L-7PPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Datasheet:
AetrixIRF3805L-7PPBF.pdf
Description:
MOSFET N-CH 55V 160A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,132

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Product details

Overview

IRF3805L-7PPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 160A N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (I2PAK) package, featuring 2.6 mΩ RDS(on) at VGS = 10 V, 175°C maximum junction temperature, and 130 nC total gate charge - optimized for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF3805L-7PPBF datasheet, IRF3805L-7PPBF pinout, IRF3805L-7PPBF application, or IRF3805L-7PPBF equivalent, key selection criteria include pulsed drain current capability (1000 A), repetitive avalanche rating (up to Tjmax), thermal resistance (RθJC = 0.50 °C/W), and body diode recovery performance (Qrr = 35–53 nC, trr = 45–68 ns).

Technical Context

This device employs advanced silicon processing to minimize conduction loss per unit area while maintaining robust switching behavior. Its low RDS(on) (2.0–2.6 mΩ) and high IDcont (160 A @ TC = 25°C) support high-efficiency power stages in synchronous rectification and H-bridge topologies.

The MOSFET integrates a fast, low-loss intrinsic body diode with 1.3 V forward voltage and tightly controlled reverse recovery (trr ≤ 68 ns, Qrr ≤ 53 nC), enabling reliable operation under hard-switched inductive loads without external freewheeling diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55 V - Maximum blocking voltage before avalanche; defines safe operating range in 48 V bus systems.
RDS(on)2.6 mΩ max @ VGS = 10 V, TJ = 25°C - Enables <1 W conduction loss at 200 A, critical for high-current power delivery.
ID cont160 A @ TC = 25°C - Sustained current handling capacity with heatsink; limited to 100 A at TC = 100°C.
Qg200 nC max - Gate drive energy requirement; dictates driver strength needed for <100 ns switching transitions.
EAS440 mJ - Single-pulse avalanche energy rating; supports unclamped inductive turn-off in motor control without snubbers.
TJ max175°C - Maximum junction temperature; enables operation in sealed enclosures or high-ambient industrial environments.
Coss eff1540 pF - Effective output capacitance during VDS rise; determines turn-off loss and resonant behavior in ZVS circuits.

Pinout & Package

IRF3805L-7PPBF is housed in a TO-262 (I2PAK) surface-mount package with isolated tab, designed for direct heatsink mounting via screw (6-32 or M3, 10 lbf·in torque). The package provides low thermal resistance (RθJC = 0.50 °C/W) and mechanical stability under high-current thermal cycling.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path from source to loadElectrically connected to exposed copper tab; must be electrically isolated from heatsink unless system ground reference permits.
SourceReference node for gate drive and current returnLow-inductance connection point for sense resistor placement and gate driver return path.
GateControl terminal for channel modulationHigh-impedance input requiring <200 nA leakage current; sensitive to ESD and requires gate resistor (RG ≥ 2.4 Ω) for dV/dt control.

Key Features

FeatureDesign Value
Ultra-low RDS(on)2.6 mΩ enables <0.7 W conduction loss at 140 A, reducing thermal design burden in high-power SMPS.
Repetitive avalanche ratingRated for repeated unclamped inductive switching up to Tjmax, eliminating need for external clamping in brushed motor drives.
Fast body diodetrr = 45–68 ns and Qrr = 35–53 nC allow efficient synchronous rectification and reduce cross-conduction risk in half-bridges.
175°C junction ratingSupports continuous operation in automotive engine compartments or industrial inverters where ambient exceeds 105°C.

Applications

Brushless DC Motor DriveServer VRM / CPU Power Stage

Use Scenario: High-current half-bridge in 24–48 V BLDC controllers for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg; conducts 140 A peak during PWM on-time.

Use Value: 2.6 mΩ RDS(on) reduces I²R losses by >30% vs. legacy 5 mΩ devices, lowering heatsink size and improving efficiency above 95%.

Use Scenario: High-density, multi-phase buck converter supplying 50–100 A to server CPUs at 0.8–1.2 V.

IC Role / Device Role / Timing Role: Synchronous rectifier in 300–500 kHz phase-leg; switches with 100 ns dead time.

Use Value: Fast body diode (trr ≤ 68 ns) minimizes shoot-through risk and enables tighter dead-time control, increasing light-load efficiency.

Industrial DC-DC ConverterAutomotive Starter Relay Replacement

Use Scenario: 48 V to 12 V bidirectional converter in commercial vehicle auxiliary power systems.

IC Role / Device Role / Timing Role: Primary-side switch in isolated full-bridge topology; handles 160 A continuous current.

Use Value: 175°C Tjmax and 0.50 °C/W RθJC ensure stable operation under sustained 100% load in confined chassis space.

Use Scenario: Solid-state replacement for electromechanical starter relays in 12 V/24 V diesel engines.

IC Role / Device Role / Timing Role: High-current load switch controlling solenoid coil; subjected to 1000 A inrush and repetitive cranking pulses.

Use Value: 1000 A pulsed drain current and 440 mJ single-pulse avalanche energy withstand cranking transients without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP160NF55RDS(on) = 3.0 mΩ (higher), Qg = 180 nC (lower), TO-220FP packageLimited to 100 A continuous; higher thermal resistance (RθJC = 1.0 °C/W)Better for cost-sensitive, lower-current designs where gate drive power is constrained.
IXFH160N055T2RDS(on) = 2.2 mΩ (lower), Qg = 220 nC (higher), TO-247AC packageHigher peak current (180 A), but larger footprint and no integrated tab isolationPreferred when lowest conduction loss is critical and board space allows TO-247 mounting.

Compared with STP160NF55 and IXFH160N055T2, IRF3805L-7PPBF offers optimal balance of ultra-low RDS(on), manageable gate charge, and compact isolated-tab packaging - making it ideal for space-constrained, thermally demanding 100–160 A applications where reliability under repetitive stress is mandatory.

Availability

IRF3805L-7PPBF is available at Aetrix Electronics and suitable for high-current motor drives, server VRMs, industrial DC-DC converters, and automotive starter replacements requiring stable component supply and long-term lifecycle assurance.

Supply support for IRF3805L-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap device design.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in demanding industrial and transportation systems.

FAQ

What is the recommended gate resistor value for IRF3805L-7PPBF in a 100 kHz half-bridge application?

A 2.4 Ω gate resistor is specified in the datasheet for avalanche testing and ensures controlled dV/dt during switching. For 100 kHz operation, a 4.7–10 Ω resistor balances EMI suppression and switching loss, assuming a 1–2 A peak gate driver. Lower values increase shoot-through risk; higher values raise turn-on loss and delay.

Can IRF3805L-7PPBF be used without a heatsink in a 50 A continuous application?

No. At 50 A and 2.6 mΩ RDS(on), conduction loss is ~6.5 W. With RθJA = 40 °C/W (PCB mount), junction temperature rise would exceed 260°C - far above the 175°C limit. A heatsink with RθCS ≤ 0.5 °C/W and forced airflow is required even at 50 A.

Does the body diode support synchronous rectification in a 48 V to 12 V buck converter?

Yes. The body diode has VSD ≤ 1.3 V at 140 A and trr ≤ 68 ns, enabling effective synchronous rectification at 300–500 kHz. However, its Qrr (35–53 nC) is higher than discrete Schottky diodes, so gate timing must avoid overlap during transition to prevent cross-conduction.

Is IRF3805L-7PPBF lead-free and RoHS-compliant?

Yes. The "-7PPBF" suffix confirms lead-free (Pb-free) construction and full compliance with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) for surface-mount reflow.

IRF3805L-7PPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 140A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
200 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7820 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK (7-Lead)

IRF3805L-7PPBF FAQ

1.How can I place an order for IRF3805L-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3805L-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3805L-7PPBF reliable?

The price and inventory of IRF3805L-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3805L-7PPBF is usually 5 days.

3.What payment methods are accepted for IRF3805L-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3805L-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3805L-7PPBF?

IRF3805L-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3805L-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3805L-7PPBF?

For technical support, including IRF3805L-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3805L-7PPBF requirements.

6.How does Aetrix verify that IRF3805L-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRF3805L-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3805L-7PPBF meets industry standards.

7.What is the process for return or replacement of IRF3805L-7PPBF?

All IRF3805L-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3805L-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3805L-7PPBF part is unused and in its original packaging.

Return procedure for IRF3805L-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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