Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3805S-7PPBF

Name: IRF3805S-7PPBF
Brand: Infineon Technologies
SKU: IRF3805S-7PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF3805S-7PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: IRF3805S-7PPBF.pdf

Description:: MOSFET N-CH 55V 160A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,755

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF3805S-7PPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 160A N-channel enhancement-mode HEXFET® Power MOSFET in D²PAK (TO-263) package, featuring 2.6 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-current primary-side switch in DC-DC converters, motor drives, and battery protection circuits.

For engineers reviewing the IRF3805S-7PPBF datasheet, IRF3805S-7PPBF pinout, IRF3805S-7PPBF application, or IRF3805S-7PPBF equivalent, key selection criteria include its ultra-low on-resistance, fast switching (t_r = 130 ns, t_f = 52 ns), 100% production-tested avalanche energy (E_AS = 440 mJ), and thermal robustness under high-pulsed-load conditions.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction losses while maintaining high dV/dt immunity and low gate charge (Q_g = 130–200 nC). Its body diode exhibits 1.3 V forward voltage at 140 A and 45–68 ns reverse recovery time (t_rr), enabling efficient synchronous rectification and freewheeling in hard-switched topologies.

The device supports unclamped inductive switching with validated repetitive avalanche capability up to I_AR = 140 A and E_AR = 300 mJ at T_J = 150°C. Thermal design is enabled by R_θJC = 0.50°C/W and R_θJA = 40°C/W (PCB mount), allowing sustained 160 A operation with proper heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with margin.
R_DS(on)	2.6 mΩ max @ V_GS = 10 V - Enables <1 W conduction loss at 140 A, critical for high-efficiency power stages.
I_D (continuous)	160 A @ T_C = 25°C - Confirmed silicon-limited current rating for high-power switching nodes.
Q_g	130–200 nC - Determines gate drive power requirement; impacts switching loss and driver sizing.
E_AS	440 mJ - 100% production-tested single-pulse avalanche energy; enables robust fault tolerance.
T_J max	175°C - Allows operation in high-ambient industrial environments without derating.
t_r/t_f	130 ns / 52 ns - Fast edge rates reduce switching transition time, lowering dynamic losses.

Pinout & Package

IRF3805S-7PPBF uses the surface-mount D²PAK (TO-263) package with isolated tab, optimized for high-current PCB mounting and thermal transfer to copper planes or heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to system ground.
Source	Return path for load current; reference for gate drive	Low-inductance source connection critical for minimizing shoot-through risk and gate oscillation.
Gate	Control input for channel conduction	High-impedance MOS gate requiring low-impedance drive (<25 Ω recommended) to control Q_g-dependent switching speed.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.6 mΩ enables <1 W conduction loss at 140 A, reducing thermal stress in high-current paths.
Repetitive avalanche rated	Validated E_AR = 300 mJ at 150°C allows reliable operation under inductive fault conditions without failure.
175°C junction rating	Supports continuous operation in sealed enclosures or high-ambient environments without forced cooling.
Fast body diode	t_rr = 45–68 ns and Q_rr = 35–53 nC reduce switching loss and EMI during freewheeling.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; compatible with standard Pb-free reflow profiles.

Applications

Motor Drive Inverter Stage

48 V DC-DC Primary Switch

Use Scenario: High-current half-bridge leg in 3-phase BLDC motor controllers for industrial automation.

IC Role / Device Role / Timing Role: Main power switch controlling phase current flow; operates at 10–20 kHz PWM with precise dead-time control.

Use Value: Low R_DS(on) minimizes I²R heating during continuous 120 A peak loads; avalanche rating protects against back-EMF transients.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V buck-boost converter for telecom power supplies.

IC Role / Device Role / Timing Role: High-side switch in non-isolated topology; driven by dedicated gate driver with 10 V logic level.

Use Value: Fast switching and low Q_g reduce transition losses at 300 kHz; thermal resistance supports >95% efficiency at full load.

Battery Protection FET

UPS Inverter Output Stage

Use Scenario: Bidirectional current control in lithium-ion battery pack protection ICs for EV auxiliary systems.

IC Role / Device Role / Timing Role: Reverse-current blocking and overcurrent cutoff switch; activated within <100 µs of fault detection.

Use Value: 100% tested E_AS ensures survival during short-circuit events; low V_SD (1.3 V) reduces forward drop in discharge path.

Use Scenario: Output H-bridge stage in online UPS delivering clean 230 VAC sine wave to critical IT loads.

IC Role / Device Role / Timing Role: High-current switching element in full-bridge inverter; modulated via SPWM at 16–20 kHz.

Use Value: 175°C rating sustains operation during extended overload; low C_oss (1260 pF) improves zero-voltage switching margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 2.4 mΩ @ 10 V, but rated only to 40 V V_DSS; lower Q_g (110 nC).	Not suitable for 55 V systems; limited to ≤40 V bus designs like 36 V e-bike controllers.	Select only if operating voltage stays below 40 V and lower gate drive loss is prioritized.
IXFH160N15T2	Higher V_DSS (150 V), higher R_DS(on) (3.2 mΩ), larger TO-247 package.	Used in 100–120 V industrial SMPS where voltage margin outweighs conduction loss penalty.	Choose when system requires ≥100 V blocking capability and board space permits through-hole mounting.

Compared with STL220N4F7AG and IXFH160N15T2, IRF3805S-7PPBF uniquely balances 55 V rating, sub-3 mΩ on-resistance, and D²PAK thermal performance-making it optimal for compact, high-current 48 V systems where voltage margin, efficiency, and surface-mount integration are jointly critical.

Availability

IRF3805S-7PPBF is available at Aetrix Electronics and suitable for motor drives, 48 V DC-DC converters, and battery protection circuits requiring stable component supply across multi-year production cycles.

Supply support for IRF3805S-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap device development.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in demanding industrial and transportation power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF3805S-7PPBF supports 170 A continuous drain current at T_C = 100°C per the Absolute Maximum Ratings table. This value reflects package thermal limits-not silicon limits-and assumes adequate PCB copper area and heatsinking per AN-994 layout guidelines.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has a forward voltage of ≤1.3 V at 140 A and reverse recovery time of 45–68 ns, making it viable for synchronous rectification in medium-frequency (≤200 kHz) topologies. However, external Schottky diodes may still be preferred for lowest conduction loss in high-efficiency designs.

Does this part require a gate resistor, and what value is recommended?

A gate resistor is required to dampen ringing and control dv/dt. A 5–25 Ω resistor is recommended between driver output and gate, depending on switching speed requirements and layout parasitics. Lower values increase switching speed but raise EMI risk; higher values reduce EMI but increase switching losses.

Can IRF3805S-7PPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. For stable parallel operation, match gate drive impedance, use symmetrical PCB routing, and ensure identical thermal mounting for each device to avoid thermal runaway.

IRF3805S-7PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 140A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

IRF3805S-7PPBF FAQ

1.How can I place an order for IRF3805S-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3805S-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3805S-7PPBF reliable?

The price and inventory of IRF3805S-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3805S-7PPBF is usually 5 days.

3.What payment methods are accepted for IRF3805S-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3805S-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3805S-7PPBF?

IRF3805S-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3805S-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3805S-7PPBF?

For technical support, including IRF3805S-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3805S-7PPBF requirements.

6.How does Aetrix verify that IRF3805S-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRF3805S-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3805S-7PPBF meets industry standards.

7.What is the process for return or replacement of IRF3805S-7PPBF?

All IRF3805S-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3805S-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3805S-7PPBF part is unused and in its original packaging.

Return procedure for IRF3805S-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…