Infineon Technologies IRF3808STRRPBF

Overview

IRF3808STRRPBF from Infineon Technologies is a 75 V, 106 A (T_C = 25°C), D²Pak-packaged N-channel enhancement-mode HEXFET® Power MOSFET with R_DS(on) = 5.9 mΩ at V_GS = 10 V and 175°C maximum junction temperature. It delivers fast switching (t_r = 140 ns, t_f = 120 ns), high repetitive avalanche capability (E_AR up to 430 mJ), and low thermal resistance (R_θJC = 0.75°C/W), making it suitable for high-current industrial motor drive inverters.

For engineers reviewing the IRF3808STRRPBF datasheet, IRF3808STRRPBF pinout, IRF3808STRRPBF application, or IRF3808STRRPBF equivalent, key selection criteria include its 75 V V_DSS, 5.9 mΩ on-resistance at 10 V gate drive, 150 nC total gate charge, 175°C operating limit, and D²Pak thermal performance in high-power DC-DC and half-bridge configurations.

Technical Context

This MOSFET employs Advanced Planar Stripe processing to minimize conduction loss per silicon area while maintaining robust unclamped inductive switching capability. Its dynamic dv/dt rating of 5.5 V/ns and body diode reverse recovery time (t_rr = 93–140 ns) support stable operation in hard-switched topologies without external snubbers.

The device integrates a low-inductance internal structure (L_D = 4.5 nH, L_S = 7.5 nH) and exhibits strong temperature stability: R_DS(on) increases only ~2.5× from 25°C to 175°C, and V_GS(th) decreases predictably from 3.0 V to 1.8 V across that range-enabling reliable gate drive design in wide-temperature industrial environments.

Key Specifications

Pinout & Package

IRF3808STRRPBF is housed in a surface-mount D²Pak (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain tab provides low-inductance, high-current conduction and serves as the primary thermal interface to the PCB heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 75 V power MOSFET applications.

Compared with STP75NF75 and IXFH75N075, IRF3808STRRPBF offers the best balance of low R_DS(on), moderate Q_g, and D²Pak thermal performance-making it optimal for space-constrained, high-efficiency 48 V industrial power stages where PCB heatsinking is preferred over discrete heatsinks.

Availability

IRF3808STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and 48 V–12 V DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for IRF3808STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRF3808STRRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial motor control, UPS, and telecom power systems where low conduction loss and rugged avalanche performance are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF3808STRRPBF supports 75 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by R_θJC = 0.75°C/W and the 175°C maximum junction temperature, ensuring safe operation without exceeding T_J(max) under sustained load.

Does this MOSFET require a gate resistor for stable switching?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. The datasheet recommends R_G = 2.5 Ω for standard switching characterization (t_d(on) = 16 ns, t_f = 120 ns). Lower values increase switching speed but raise EMI risk; higher values reduce ringing but increase switching losses-designers should optimize based on layout and EMI requirements.

Can IRF3808STRRPBF replace IRF3808SPbF in existing designs?

Yes-IRF3808STRRPBF is the tape-and-reel variant of the same D²Pak device as IRF3808SPbF, with identical electrical specifications, thermal characteristics, and pinout. The "RR" suffix denotes right-edge tape orientation per EIA-481 standard; no layout or schematic changes are needed for drop-in replacement in automated assembly.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has t_rr = 93 ns (typ.) and Q_rr = 340 nC (typ.), enabling use in synchronous rectification at ≤100 kHz. However, its V_SD = 1.3 V at 82 A results in higher conduction loss than discrete Schottky diodes; it is best applied where simplicity and cost outweigh marginal efficiency gains.