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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF4104GPBF

Name: IRF4104GPBF
Brand: Infineon Technologies
SKU: IRF4104GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF4104GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF4104GPBF.pdf

Description:: MOSFET N CH 40V 75A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF4104GPBF from Infineon Technologies is a 40V, 75A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring 5.5mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-current, low-loss main switch in DC-DC converters, motor drives, and power supply output stages.

For engineers reviewing the IRF4104GPBF datasheet, IRF4104GPBF pinout, IRF4104GPBF application, or IRF4104GPBF equivalent, key selection criteria include its 40V V_DSS, 5.5mΩ on-resistance, 100nC total gate charge, fast 130ns rise time, and validated 470A pulsed drain capability under thermal limits.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robust switching performance. Its 175°C operating junction temperature enables high-power density designs without derating in constrained thermal environments.

The device integrates a low-V_F (1.3V) body diode with 23–35ns reverse recovery time and supports unclamped inductive switching up to T_jmax, verified by single-pulse avalanche energy of 470mJ at I_AS = 75A and E_AR = 120mJ under repetitive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in buck converters and half-bridge topologies.
R_DS(on)	5.5mΩ max @ V_GS = 10V - Enables ≤4.2W conduction loss at 75A DC, critical for high-efficiency 12V/48V input systems.
I_D (continuous)	75A @ T_C = 25°C - Sustained current capability with heatsink; limited to 47A at T_C = 100°C per thermal derating.
Q_g	100nC max - Determines gate driver power requirement; requires ≥1A peak drive for 20ns switching transitions.
t_r/t_f	130ns / 77ns - Fast edge rates reduce switching losses in 100–500kHz SMPS applications.
E_AS	470mJ - Single-pulse avalanche energy rating allows safe operation during inductive turn-off transients without snubbers.
T_J max	175°C - Enables reliable operation in sealed enclosures or high-ambient industrial environments without forced air.

Pinout & Package

IRF4104GPBF uses the standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, and 1.05°C/W junction-to-case thermal resistance. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically tied to metal tab; must be mounted to heatsink with insulating washer if isolation required.
Source	Return path for load current; reference for gate drive	Low-inductance connection essential for stable switching; internal source inductance LS = 7.5nH affects di/dt control.
Gate	Control electrode for channel conduction	High-impedance input requiring <200nA leakage handling; Miller charge Q_gd = 27nC dominates turn-off timing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.5mΩ max enables >96% efficiency in 12V/75A synchronous rectifier stages.
Repetitive avalanche rated	120mJ E_AR allows repeated inductive turn-off without degradation-no external clamping needed in relay drivers.
175°C junction rating	Eliminates thermal derating in automotive under-hood or industrial motor-control modules up to 125°C ambient.
Fast body diode	23ns t_rr, 10nC Q_rr reduces shoot-through risk and EMI in half-bridge freewheeling paths.
Lead-free & halogen-free	Meets IPC-J-STD-609 Class 1 and RoHS Directive 2011/65/EU for green manufacturing compliance.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: High-current step-down regulator for server VRMs or telecom power shelves delivering 12V@60A.

IC Role / Device Role / Timing Role: Primary high-side switch operating at 300kHz with synchronous rectification.

Use Value: 5.5mΩ R_DS(on) cuts conduction loss by 38% vs. comparable 8mΩ MOSFETs, reducing heatsink size by 40%.

Use Scenario: H-bridge driver for 24V industrial actuators with bidirectional 50A stall current.

IC Role / Device Role / Timing Role: Low-side switch handling PWM commutation and regenerative braking via body diode conduction.

Use Value: 175°C rating ensures reliability during 100% duty-cycle stall events without thermal shutdown.

Uninterruptible Power Supply (UPS)

Hot-Swap Controller

Use Scenario: Output stage in online double-conversion UPS inverters supporting 48V battery input and 230VAC output.

IC Role / Device Role / Timing Role: Inverter leg switch subjected to repetitive unclamped inductive stress during grid sync transitions.

Use Value: Validated 470mJ E_AS eliminates need for external avalanche-rated snubbers, simplifying BOM and layout.

Use Scenario: OR-ing FET in redundant 12V backplane systems with automatic fault isolation.

IC Role / Device Role / Timing Role: Load-switch element controlling inrush current and reverse-current blocking during card insertion.

Use Value: 2.0–4.0V V_GS(th) range enables precise gate biasing with standard 3.3V logic controllers, avoiding false turn-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75V V_DSS, 75A, 7.5mΩ R_DS(on), TO-220	Higher voltage margin but 36% higher conduction loss at 40V bus	Preferred only where 75V transient immunity is mandatory; otherwise inferior efficiency.
IXTH75N10L2	100V V_DSS, 75A, 10mΩ R_DS(on), TO-247	Larger package, higher gate charge (140nC), no avalanche rating	Suitable for higher-voltage systems but requires stronger gate driver and lacks IRF4104GPBF's ruggedness in inductive loads.

Compared with STP75NF75 and IXTH75N10L2, IRF4104GPBF delivers optimal balance of low R_DS(on), proven avalanche robustness, and TO-220 thermal performance for 40V-class power switching-making it the preferred choice where efficiency, reliability, and board space are jointly constrained.

Availability

IRF4104GPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and hot-swap controllers requiring stable component supply across production lifecycles.

Supply support for IRF4104GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF HEXFET® product line targets high-efficiency power conversion, emphasizing low R_DS(on), fast switching, and rugged avalanche performance for industrial, computing, and transportation applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF4104GPBF supports 47A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 75A rating at 25°C due to reduced heat dissipation capacity, and assumes proper heatsinking with R_θJC = 1.05°C/W and ambient airflow.

Is the TO-220AB package lead-free and RoHS-compliant?

Yes, the IRF4104GPBF is explicitly marked "PbF" (lead-free) and "Halogen-Free" in its part number and datasheet. It complies with EU RoHS Directive 2011/65/EU and IPC-J-STD-609 Class 1 for moisture sensitivity and halogen content, with no exemptions applied.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 6.8Ω, per Figure 6 test condition) is recommended to dampen ringing caused by gate loop inductance and Miller effect. Without it, the 100nC Q_g and 27nC Q_gd can induce oscillation during turn-off, increasing EMI and dynamic losses-especially with high-speed drivers.

Can IRF4104GPBF replace IRF4104 in existing designs?

Yes, IRF4104GPBF is a direct drop-in replacement for the legacy IRF4104, sharing identical pinout, electrical specs, and thermal characteristics. The "GPBF" suffix denotes lead-free/halogen-free construction, with no performance trade-offs-verified by Infineon's qualified reflow profile and qualification reports.

IRF4104GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF4104GPBF FAQ

1.How can I place an order for IRF4104GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF4104GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF4104GPBF reliable?

The price and inventory of IRF4104GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF4104GPBF is usually 5 days.

3.What payment methods are accepted for IRF4104GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF4104GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF4104GPBF?

IRF4104GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF4104GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF4104GPBF?

For technical support, including IRF4104GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF4104GPBF requirements.

6.How does Aetrix verify that IRF4104GPBF is sourced from the original manufacturer or authorized distributors?

All IRF4104GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF4104GPBF meets industry standards.

7.What is the process for return or replacement of IRF4104GPBF?

All IRF4104GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF4104GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF4104GPBF part is unused and in its original packaging.

Return procedure for IRF4104GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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