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Infineon Technologies IRF4104SPBF

Part No.:
IRF4104SPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF4104SPBF.pdf
Description:
MOSFET N-CH 40V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,292

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Product details

Overview

IRF4104SPBF from Infineon Technologies (formerly International Rectifier) is a 40V, 75A N-channel D2PAK-packaged HEXFET® Power MOSFET with 5.5mΩ RDS(on) at VGS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-current, low-loss main or synchronous rectifier switch in DC-DC converters, motor drives, and power supply output stages.

For engineers reviewing the IRF4104SPBF datasheet, IRF4104SPBF pinout, IRF4104SPBF application, or IRF4104SPBF equivalent, key selection criteria include its 5.5mΩ on-resistance at 75A, 100nC total gate charge, 1.05°C/W junction-to-case thermal resistance, and D2PAK package compatibility with high-power PCB layouts and heatsink mounting.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robust switching performance. Its 4.3mΩ typical RDS(on), 68nC typical Qg, and 27nC Qgd support efficient hard-switching up to several hundred kHz in buck and half-bridge topologies.

The integrated body diode exhibits 1.3V forward voltage at 75A and 23ns typical reverse recovery time, enabling use in synchronous rectification and freewheeling applications without external diode supplementation. Repetitive avalanche capability up to Tjmax allows reliable operation under unclamped inductive switching stress.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS40V - Maximum drain-source blocking voltage; defines safe operating range in 12V–36V bus systems.
RDS(on) @ VGS=10V5.5mΩ max - Enables ≤4.2W conduction loss at 75A continuous; critical for thermal management in high-current rails.
ID @ TC=25°C75A - Continuous drain current rating under ideal heatsinking; sets baseline for PCB copper area and thermal pad design.
Qg100nC max - Determines gate driver strength requirement; ~1A peak needed for 100ns turn-on with 10V swing.
RθJC1.05°C/W - Junction-to-case thermal resistance; enables direct heatsink mounting with predictable temperature rise.
EAS470mJ - Single-pulse avalanche energy; supports robustness against inductive kickback in motor control and relay drive.

Pinout & Package

IRF4104SPBF is housed in a surface-mount D2PAK (TO-263) package with exposed drain tab for thermal and electrical connection. The three terminals are arranged with Drain (tab), Source (pins 1 & 2), and Gate (pin 3).

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path from source to loadElectrically and thermally connected to PCB copper pour; must be isolated from other nets except intended drain node.
Source (Pins 1 & 2)Reference node for gate drive and current returnParallel pins reduce bondwire inductance; connects directly to low-impedance ground/power plane for stable switching.
Gate (Pin 3)Control terminal for channel modulationHigh-impedance input requiring low-inductance gate loop; sensitive to ringing due to 63S transconductance and 100nC Qg.

Key Features

FeatureDesign Value
Ultra-low RDS(on)5.5mΩ max at 75A/10V - Reduces I²R losses by >30% vs. legacy 40V MOSFETs, improving efficiency in 50–100A power stages.
175°C rated junction temperatureEnables sustained operation in sealed enclosures or high-ambient environments without derating below 75A.
Repetitive avalanche ratedValidated for repeated unclamped inductive switching up to EAR = 120mJ - eliminates need for snubbers in brushed DC motor H-bridges.
Fast switching with low Qgd/Qg ratio27nC/100nC = 0.27 - Minimizes Miller-induced shoot-through risk and improves controllability in high-frequency PWM.

Applications

DC-DC Buck ConverterBrushed DC Motor Drive

Use Scenario: High-efficiency 12V-to-5V/20A point-of-load converter in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 300kHz with 10V gate drive.

Use Value: 5.5mΩ RDS(on) limits conduction loss to 7.9W at full load, enabling compact heatsink-free design on 2oz copper.

Use Scenario: Full-bridge driver for 24V, 500W brushed DC actuator in automated valve control.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 75A stall current with PWM commutation.

Use Value: 175°C rating and repetitive avalanche allow safe operation during rapid direction reversal and mechanical jam conditions.

Server VRM Phase LegIndustrial AC-DC PFC Output Switch

Use Scenario: 48V-input server VRM phase leg delivering 12V@120A to CPU core rail.

IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved multiphase buck stage with 500kHz switching.

Use Value: Low Qgd (27nC) and fast tr/tf (130ns/77ns) reduce switching loss and improve light-load efficiency.

Use Scenario: Output switch in 3.3kW active PFC front-end using Vienna rectifier topology.

IC Role / Device Role / Timing Role: High-current clamp switch managing 75A continuous output current with 100kHz switching.

Use Value: 1.05°C/W RθJC enables direct bolt-down heatsinking to maintain Tj < 130°C at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40V power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL120N4LF6AG6.0mΩ RDS(on), 120A ID, 120nC Qg, PowerFLAT 5x6 packageLower profile, no exposed tab; requires thermal via array instead of direct heatsink mountPreferred for space-constrained, low-height designs where board-level thermal spreading suffices.
IXTP40N40P40mΩ RDS(on), 40A ID, TO-220 package, higher RDS(on) but lower costLimited to ≤40A continuous; unsuitable for 75A applications without parallel devicesCost-sensitive, lower-current replacements where thermal budget permits higher conduction loss.

Compared with STL120N4LF6AG and IXTP40N40P, IRF4104SPBF delivers optimal balance of ultra-low on-resistance, proven avalanche ruggedness, and D2PAK thermal interface-making it the preferred choice for 75A industrial power stages requiring reliability over miniaturization or cost reduction.

Availability

IRF4104SPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRF4104SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRF4104SPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in demanding industrial and computing applications.

FAQ

What is the maximum continuous drain current for IRF4104SPBF at 100°C case temperature?

At TC = 100°C, the continuous drain current is derated to 120A (silicon-limited) but package-limited to 84A. This reflects thermal constraints of the D2PAK package under real-world heatsink conditions, not just die capability. Designers must verify actual case temperature via thermal simulation or measurement to avoid exceeding 84A in sustained operation.

Does IRF4104SPBF require a gate resistor for stable switching?

Yes-a gate resistor between 4.7Ω and 10Ω is recommended to dampen ringing caused by its 63S transconductance and layout parasitics. Without it, overshoot exceeding ±20V gate rating may occur, risking premature failure. The resistor value must balance switching speed (lower R = faster) against EMI and shoot-through risk (higher R = safer but slower).

Can IRF4104SPBF be used in parallel configurations?

Yes-its positive RDS(on) temperature coefficient (normalized RDS(on) rises with temperature) enables inherent current sharing when paralleled with identical units. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors are mandatory to prevent oscillation and uneven current distribution at high frequencies.

Is the body diode suitable for reverse recovery in high-frequency applications?

The body diode has 23ns typical trr and 6.8nC typical Qrr, making it usable in moderate-frequency (<200kHz) freewheeling roles. However, for >300kHz synchronous rectification, external Schottky diodes or actively controlled complementary MOSFETs are preferred to avoid reverse recovery loss spikes and associated EMI.

IRF4104SPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
140W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRF4104SPBF FAQ

1.How can I place an order for IRF4104SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF4104SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF4104SPBF reliable?

The price and inventory of IRF4104SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF4104SPBF is usually 5 days.

3.What payment methods are accepted for IRF4104SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF4104SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF4104SPBF?

IRF4104SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF4104SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF4104SPBF?

For technical support, including IRF4104SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF4104SPBF requirements.

6.How does Aetrix verify that IRF4104SPBF is sourced from the original manufacturer or authorized distributors?

All IRF4104SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF4104SPBF meets industry standards.

7.What is the process for return or replacement of IRF4104SPBF?

All IRF4104SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF4104SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF4104SPBF part is unused and in its original packaging.

Return procedure for IRF4104SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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