Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF4905SPBF

Name: IRF4905SPBF
Brand: Infineon Technologies
SKU: IRF4905SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF4905SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF4905SPBF.pdf

Description:: MOSFET P-CH 55V 42A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,843

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF4905SPBF from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in D²Pak (TO-263) package, rated for -55 V V_DSS, 20 mΩ R_DS(on) at V_GS = -10 V, and -42 A continuous drain current at T_C = 25°C. It features fast switching (t_r = 99 ns, t_f = 64 ns), 150°C junction operation, and tested repetitive avalanche capability up to T_jmax, enabling robust use in high-current DC-DC synchronous rectification and motor control H-bridge legs.

For engineers reviewing the IRF4905SPBF datasheet, IRF4905SPBF pinout, IRF4905SPBF application, or IRF4905SPBF equivalent, key selection criteria include verified negative-channel conduction, body diode recovery performance (t_rr = 61–92 ns, Q_rr = 150–220 nC), thermal resistance (R_θJC = 0.75°C/W), and gate charge profile (Q_g = 120–180 nC) under hard-switched inductive loads.

Technical Context

This device operates as a high-side or low-side switch in bidirectional power paths, leveraging its symmetrical source-drain diode and low R_DS(on) to minimize conduction loss in reverse-polarity protection and battery back-up circuits. Its negative gate threshold (-2.0 to -4.0 V) and high transconductance (g_fs = 19 S typical) support stable turn-on with standard logic-level gate drivers.

The MOSFET's avalanche-rated design allows unclamped inductive switching without external snubbers in solenoid drivers and relay interface circuits. Thermal performance is defined by junction-to-case resistance (0.75°C/W) and validated transient impedance curves supporting pulsed current handling up to -280 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-55 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V automotive and industrial bus systems.
R_DS(on)	20 mΩ max @ V_GS = -10 V - Enables ≤0.35 W conduction loss at -42 A, critical for thermally constrained PCB layouts.
I_D (cont)	-42 A @ T_C = 25°C - Confirmed silicon-limited current rating; requires heatsinking above 75°C case temperature.
Q_g	120–180 nC - Gate drive energy demand determines minimum driver peak current (≥2 A) and layout parasitic sensitivity.
t_r/t_f	99 ns / 64 ns - Fast edge rates reduce switching loss but increase EMI risk; demands careful gate resistor and layout optimization.
E_AS	790 mJ (tested) - Validated single-pulse avalanche energy supports reliable operation during load dump or inductive kick events.
V_SD	-1.3 V max @ I_S = -42 A - Body diode forward drop impacts efficiency in freewheeling paths and reverse-current scenarios.

Pinout & Package

IRF4905SPBF uses the surface-mount D²Pak (TO-263) package with exposed drain pad for thermal dissipation. The three terminals are arranged in a single-row configuration: Gate (left), Drain (center pad), Source (right).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Accepts negative V_GS to modulate channel; requires ≥2 A peak drive current due to 120–180 nC Q_g.
Drain (D)	High-side power terminal	Exposed copper pad on bottom; electrically connected to tab; must be soldered to large copper pour for thermal management.
Source (S)	Reference and return path	Common node for gate drive reference and load return; carries full switched current and body diode conduction.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	20 mΩ enables <0.4 W conduction loss at rated current, reducing heatsink size in space-constrained 48 V systems.
Repetitive avalanche rating	Validated to operate repeatedly within thermal limits up to T_jmax = 150°C, eliminating need for external clamping in inductive switching.
Fast body diode recovery	t_rr = 61–92 ns and Q_rr = 150–220 nC support efficient synchronous rectification without cross-conduction risk.
Lead-free construction	RoHS-compliant Pb-free plating and packaging meet IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL3).

Applications

Reverse Polarity Protection

DC Motor H-Bridge

Use Scenario: Prevents damage from incorrect battery connection in 24–48 V vehicle electronics and portable power tools.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch; conducts only when V_IN polarity matches design intent.

Use Value: Eliminates series diode drop (vs. Schottky solution), preserving >98% input voltage under full load via 20 mΩ R_DS(on).

Use Scenario: Controls bidirectional rotation of brushed DC motors in industrial actuators and robotic joints.

IC Role / Device Role / Timing Role: Low-side switch in complementary pair; handles -42 A continuous current during stall conditions.

Use Value: Avalanche rating absorbs inductive kick during PWM commutation, avoiding external TVS and reducing BOM count.

48 V Telecom Rectification

Uninterruptible Power Supply (UPS)

Use Scenario: Synchronous rectifier in isolated 48 V DC-DC converters for telecom base stations and data center PSUs.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diodes; driven with phase-aligned gate signal.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, improving full-load efficiency from 92% to 94.5% at 20 A output.

Use Scenario: Battery back-up switching in line-interactive UPS systems requiring seamless transfer between AC and DC sources.

IC Role / Device Role / Timing Role: Bidirectional isolation switch; blocks reverse current from battery to inverter during AC mode.

Use Value: Body diode V_SD = -1.3 V ensures low-loss freewheeling during transfer transients, limiting voltage sag to <0.5 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	Same die, TO-220 package; R_θJA = 62°C/W (vs. 40°C/W for D²Pak); no exposed drain pad.	Limited to lower-power or forced-air-cooled designs; unsuitable for high-density SMT layouts.	Select when through-hole assembly or legacy footprint compatibility is required.
STP40NF10L	N-channel, 100 V, 40 A, R_DS(on) = 30 mΩ; requires high-side driver or bootstrap circuitry.	Not directly substitutable in high-side configurations without gate drive redesign.	Choose only if N-channel topology is already implemented and gate drive overhead is acceptable.

Compared with IRF4905PbF, the SPBF variant offers superior thermal performance and SMT compatibility; versus STP40NF10L, it eliminates gate drive complexity in high-side roles but trades off higher voltage rating and slightly higher R_DS(on).

Availability

IRF4905SPBF is available at Aetrix Electronics and suitable for reverse polarity protection, DC motor H-bridge control, and 48 V telecom rectification requiring stable component supply across production lifecycles.

Supply support for IRF4905SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency power conversion and rugged switching applications, emphasizing low R_DS(on), fast switching, and validated avalanche reliability in harsh environments.

FAQ

What is the maximum allowable gate-to-source voltage for IRF4905SPBF?

The absolute maximum V_GS rating is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable switching, gate drive should be limited to -10 V for full enhancement and +5 V for safe turn-off, per the datasheet's recommended operating conditions and gate charge curve.

Can IRF4905SPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (normalized resistance increases with junction temperature) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to ensure balanced conduction; derate total current by 15% for two devices.

Does IRF4905SPBF have a built-in ESD protection diode?

No-the device lacks integrated gate protection diodes. External Zener clamps (e.g., 12 V, 0.5 W) between gate and source are strongly recommended to prevent electrostatic damage during handling and PCB assembly, especially in automated SMT lines.

What is the typical gate threshold voltage range at 25°C?

V_GS(th) is specified from -2.0 V to -4.0 V at I_D = -250 µA. At room temperature, most units measure between -2.8 V and -3.4 V; this range ensures consistent turn-on with -5 V logic-level drivers while maintaining noise immunity against spurious gate excursions.

IRF4905SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF4905SPBF FAQ

1.How can I place an order for IRF4905SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF4905SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF4905SPBF reliable?

The price and inventory of IRF4905SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF4905SPBF is usually 5 days.

3.What payment methods are accepted for IRF4905SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF4905SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF4905SPBF?

IRF4905SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF4905SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF4905SPBF?

For technical support, including IRF4905SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF4905SPBF requirements.

6.How does Aetrix verify that IRF4905SPBF is sourced from the original manufacturer or authorized distributors?

All IRF4905SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF4905SPBF meets industry standards.

7.What is the process for return or replacement of IRF4905SPBF?

All IRF4905SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF4905SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF4905SPBF part is unused and in its original packaging.

Return procedure for IRF4905SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.