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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF4905STRR

Name: IRF4905STRR
Brand: Infineon Technologies
SKU: IRF4905STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF4905STRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF4905STRR.pdf

Description:: MOSFET P-CH 55V 74A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF4905STRR from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for -55 V V_DSS, 20 mΩ R_DS(on) at V_GS = -10 V, and -42 A continuous drain current at T_C = 25°C. It features fast switching (t_r = 99 ns, t_f = 64 ns), 150°C junction temperature rating, and tested repetitive avalanche capability up to T_jmax, making it suitable for high-efficiency DC-DC synchronous rectification and motor control H-bridge low-side switching.

For engineers reviewing the IRF4905STRR datasheet, IRF4905STRR pinout, IRF4905STRR application, or IRF4905STRR equivalent, key selection considerations include verified P-channel polarity, D2PAK thermal performance (R_θJC = 0.75°C/W), body diode reverse recovery (Q_rr = 150–220 nC), and gate charge profile (Q_g = 120–180 nC) for PWM-driven power stages.

Technical Context

This MOSFET operates as a high-current, low-voltage P-channel switch with integrated body diode optimized for unidirectional current conduction in buck converters and half-bridge configurations. Its negative threshold voltage (-2.0 to -4.0 V) ensures reliable turn-on with standard logic-level gate drivers, while its 150°C maximum junction temperature supports operation in thermally constrained industrial enclosures.

The device's avalanche-rated design allows controlled energy absorption during inductive load switching transients, validated per unclamped inductive test conditions (Fig. 12a–c). Its output capacitance (C_oss = 1250 pF typ.) and reverse transfer capacitance (C_rss = 450 pF typ.) are characterized across V_DS = 0–44 V, enabling accurate snubber and dead-time design in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-55 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus systems.
R_DS(on)	20 mΩ max @ V_GS = -10 V - Conduction loss of ≤35.3 W at -42 A, critical for thermal management in PCB-mounted designs.
I_D (cont)	-42 A @ T_C = 25°C - Continuous current capability limited by package thermal resistance, not silicon die.
Q_g	120–180 nC - Total gate charge determines driver strength requirement; impacts switching loss in 100–500 kHz PWM applications.
t_r/t_f	99 ns / 64 ns - Rise/fall times define minimum controllable PWM pulse width and EMI generation profile.
E_AS	790 mJ (tested) - Single-pulse avalanche energy rating enables robustness against inductive kickback without external clamping.
V_SD	-1.3 V max - Forward voltage of integral body diode; sets conduction loss during freewheeling in synchronous rectifiers.

Pinout & Package

IRF4905STRR uses the surface-mount D2PAK (TO-263) package with exposed drain pad for enhanced thermal dissipation. The package outline conforms to JEDEC TO-263AB standard, with 3.0 mm creepage/clearance and 1.6 mm soldering height tolerance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab/Pad)	Drain (D)	Electrically connected to metal tab; primary heat path to PCB copper; must be soldered to thermal pad for R_θJC = 0.75°C/W performance.
Pin 2	Source (S)	Reference node for gate drive; carries full load current in low-side configuration; ties to ground or common return plane.
Pin 3	Gate (G)	Control terminal requiring ≥10 V negative bias relative to source to achieve R_DS(on) spec; sensitive to ESD (±100 nA I_GSS leakage).

Key Features

Feature	Design Value
Ultra-low R_DS(on)	20 mΩ max enables <1.8 W conduction loss at -30 A, reducing heatsink requirements in space-constrained 12–48 V systems.
Repetitive avalanche rating	Tested to 140 mJ EAR at T_j = 150°C, allowing repeated inductive turn-off without derating in motor drive fault conditions.
Fast body diode recovery	Q_rr = 150–220 nC and t_rr = 61–92 ns minimize cross-conduction loss and voltage overshoot in synchronous rectifier mode.
150°C junction rating	Enables operation in sealed industrial enclosures with ambient temperatures up to 85°C when mounted on 2 oz copper with 200 cm² thermal pad.

Applications

DC-DC Synchronous Rectifier

H-Bridge Motor Driver

Use Scenario: Used as low-side switch in non-isolated buck converter for FPGA core voltage regulation (0.8–1.2 V @ 30 A).

IC Role / Device Role / Timing Role: P-channel MOSFET conducting during freewheeling phase; body diode provides initial current path until gate turns on.

Use Value: 20 mΩ R_DS(on) reduces conduction loss by 42% vs. Schottky diode solution, improving efficiency from 89% to 93% at full load.

Use Scenario: Low-side switch in 24 V brushed DC motor controller with regenerative braking.

IC Role / Device Role / Timing Role: P-channel switch controlling current flow through motor winding; avalanche rating absorbs back-EMF during rapid deceleration.

Use Value: 790 mJ E_AS eliminates need for external TVS, simplifying BOM and PCB layout while maintaining 100 k-cycle lifetime.

UPS Inverter Stage

Industrial PLC Output Module

Use Scenario: Half-bridge leg in 48 V offline UPS inverter delivering 500 VA sinusoidal output.

IC Role / Device Role / Timing Role: High-side P-channel switch (with level-shifted gate drive) managing AC phase voltage polarity reversal.

Use Value: -55 V V_DSS provides 2× safety margin over 48 V nominal bus, accommodating transient surges up to 80 V without breakdown.

Use Scenario: Solid-state relay replacement in 24 V DC digital output module driving solenoid valves.

IC Role / Device Role / Timing Role: Load switch isolating field devices; body diode handles inductive kickback during de-energization.

Use Value: Integrated diode with -1.3 V V_SD eliminates discrete flyback diode, reducing component count and failure points in high-reliability control systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	Same die, TO-220 package; R_θJA = 62°C/W vs. D2PAK's 40°C/W; no exposed drain pad.	Limited to lower-power (<15 A) through-hole designs; unsuitable for high-density SMT layouts.	Select for prototyping or low-volume manual assembly where thermal budget permits higher case rise.
STP45P4LH6	-45 V V_DSS, 18 mΩ R_DS(on), 45 A I_D; different gate charge (Q_g = 105 nC); no published avalanche energy data.	Better conduction loss but unverified avalanche robustness; requires external clamping in inductive loads.	Prefer for efficiency-critical, non-fault-tolerant applications where gate drive strength is constrained.

Compared with IRF4905PbF and STP45P4LH6, IRF4905STRR uniquely balances high-current capability, proven avalanche ruggedness, and SMT-compatible thermal performance-making it optimal for production-grade motor drives and regulated power supplies demanding reliability under transient stress.

Availability

IRF4905STRR is available at Aetrix Electronics and suitable for industrial motor control, uninterruptible power supplies, and DC-DC converter designs requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IRF4905STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency switching applications in power conversion, motor drives, and battery management, emphasizing ruggedness, low R_DS(on), and validated avalanche performance for mission-critical systems.

FAQ

What is the maximum gate-to-source voltage rating for IRF4905STRR?

The absolute maximum V_GS is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable turn-on, -10 V is recommended to achieve full R_DS(on) spec; gate drive circuits must include clamping diodes or Zener limiters to prevent overshoot during fast switching transitions.

Can IRF4905STRR be used in parallel configurations?

Yes, but only with matched devices and individual gate resistors (≥10 Ω) to ensure current sharing. Thermal coupling via shared PCB copper is essential-mismatched case temperatures cause >20% current imbalance. Derate total current by 15% versus single-device rating due to thermal crosstalk in D2PAK arrays.

Does IRF4905STRR require a gate driver IC, or can it be driven directly from a microcontroller?

A dedicated gate driver IC is required. Microcontroller GPIO pins cannot sink the 180 nC Q_g at typical PWM frequencies (>20 kHz) without excessive rise time or shoot-through risk. A driver like TC4427 (±2 A peak) ensures t_r < 100 ns and prevents partial turn-on during voltage transitions.

What is the significance of the "STRR" suffix in the part number?

The "STRR" suffix denotes tape-and-reel packaging per EIA-481 standard, with 800 units per reel, RoHS-compliant lead-free finish, and moisture sensitivity level (MSL) 3. It indicates factory-sealed, automated-assembly-ready format-not a functional variant-and matches the electrical specs of IRF4905PbF and IRF4905LPbF.

IRF4905STRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 74A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF4905STRR FAQ

1.How can I place an order for IRF4905STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF4905STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF4905STRR reliable?

The price and inventory of IRF4905STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF4905STRR is usually 5 days.

3.What payment methods are accepted for IRF4905STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF4905STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF4905STRR?

IRF4905STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF4905STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF4905STRR?

For technical support, including IRF4905STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF4905STRR requirements.

6.How does Aetrix verify that IRF4905STRR is sourced from the original manufacturer or authorized distributors?

All IRF4905STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF4905STRR meets industry standards.

7.What is the process for return or replacement of IRF4905STRR?

All IRF4905STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF4905STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF4905STRR part is unused and in its original packaging.

Return procedure for IRF4905STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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