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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF4905STRRPBF

Name: IRF4905STRRPBF
Brand: Infineon Technologies
SKU: IRF4905STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF4905STRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF4905STRRPBF.pdf

Description:: MOSFET P-CH 55V 42A D2PAK

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Product details

Overview

IRF4905STRRPBF from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for -55 V V_DSS, 20 mΩ R_DS(on) at V_GS = -10 V, and -42 A continuous drain current at T_C = 25°C. It features fast switching (t_r = 99 ns, t_f = 64 ns), 150°C junction temperature rating, and repetitive avalanche capability up to T_jmax, enabling robust operation in high-current DC-DC converters and motor control H-bridges.

For engineers reviewing the IRF4905STRRPBF datasheet, IRF4905STRRPBF pinout, IRF4905STRRPBF application, or IRF4905STRRPBF equivalent, key selection criteria include verified negative-channel conduction behavior, body diode reverse recovery charge (Q_rr = 150–220 nC), thermal resistance (R_θJC = 0.75°C/W), gate charge profile (Q_g = 120–180 nC), and avalanche energy rating (E_AS = 790 mJ).

Technical Context

This device operates as a high-side or synchronous rectifier switch in low-voltage, high-current power stages. Its P-channel architecture eliminates the need for bootstrap circuitry in high-side configurations, while its low R_DS(on) and optimized gate charge support efficient PWM operation at frequencies up to several hundred kHz.

The integrated body diode exhibits V_SD = -1.3 V at -42 A and trr = 61–92 ns, with Q_rr = 150–220 nC - critical for minimizing commutation losses in bidirectional topologies like half-bridge inverters and regenerative braking circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-55 V - Maximum blocking voltage before avalanche onset; defines safe operating range in negative-rail applications.
R_DS(on)	20 mΩ @ V_GS = -10 V - On-resistance directly determines conduction loss (P_cond = I² × R) at full load.
I_D (T_C = 25°C)	-42 A - Continuous silicon-limited drain current; sets maximum steady-state power delivery capability.
Q_g	120–180 nC - Total gate charge dictates driver strength requirement and switching loss scaling.
E_AS	790 mJ - Single-pulse avalanche energy rating; enables unclamped inductive turn-off without failure.
R_θJC	0.75°C/W - Junction-to-case thermal resistance; determines heatsink interface requirements for thermal management.
trr / Q_rr	61–92 ns / 150–220 nC - Body diode reverse recovery metrics; critical for minimizing shoot-through and EMI in synchronous rectification.

Pinout & Package

IRF4905STRRPBF uses the surface-mount D2PAK (TO-263) package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard G-D-S order on the bottom side of the leadframe.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts -10 V to -20 V gate drive to fully enhance channel; threshold voltage V_GS(th) = -2.0 to -4.0 V.
D (Drain)	Main current output terminal	Internally connected to exposed copper pad; carries full load current and serves as primary thermal path to PCB heatsink.
S (Source)	Main current return terminal	Reference node for gate drive; connects to system ground or negative rail in high-side configuration.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	20 mΩ at -10 V gate drive enables <1 W conduction loss at 42 A, reducing thermal burden in compact designs.
150°C junction rating	Extended thermal margin allows sustained operation in automotive under-hood or industrial ambient environments up to 125°C.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching events without degradation, validated per JEDEC JESD24-11.
Fast switching speed	99 ns rise time and 64 ns fall time support high-frequency PWM (>100 kHz) with minimized switching loss.
Lead-free construction	RoHS-compliant packaging meets IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) for standard SMT assembly.

Applications

DC-DC Buck Converter

H-Bridge Motor Driver

Use Scenario: High-efficiency 12 V input to 5 V/3.3 V point-of-load conversion in telecom power supplies.

IC Role / Device Role: Synchronous rectifier in low-side position, replacing Schottky diode to reduce forward drop and improve efficiency.

Use Value: Achieves >94% efficiency at 30 A output due to 20 mΩ R_DS(on) and low Q_rr, cutting conduction loss by 65% vs. discrete diode solution.

Use Scenario: Bidirectional 24 V brushed DC motor control in industrial actuators with regenerative braking.

IC Role / Device Role: High-side switch in dual half-bridge configuration, leveraging P-channel topology to avoid bootstrap complexity.

Use Value: Enables true four-quadrant operation with controlled body-diode conduction during regeneration, supported by 220 nC Q_rr and 790 mJ E_AS.

Automotive Lighting Control

UPS Inverter Stage

Use Scenario: LED headlamp dimming and fault protection in 12 V vehicle electrical systems.

IC Role / Device Role: High-side current switch with integrated overcurrent and thermal shutdown via external sensing.

Use Value: Withstands load dump transients up to -55 V and sustains 150°C junction temperature during short-circuit events, meeting ISO 7637-2 pulse 5a requirements.

Use Scenario: 48 V DC bus to 230 V AC line-frequency inverter in offline UPS systems.

IC Role / Device Role: Low-side switch in full-bridge output stage, handling peak currents up to -280 A pulsed.

Use Value: Repetitive avalanche rating permits safe turn-off into inductive loads without snubbers, reducing BOM count and board space by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	Same die, TO-220 package; higher R_θJA (40°C/W vs. 0.75°C/W case-to-ambient not applicable; R_θJC not specified)	Limited to lower-power, through-hole designs with forced-air cooling	Select when mechanical mounting constraints preclude surface-mount or when legacy board layout prohibits D2PAK footprint.
STP40NF10L	N-channel, 100 V, 40 A, R_DS(on) = 30 mΩ; requires high-side gate driver	Not suitable for direct high-side replacement without level-shifting circuitry	Prefer only in new N-channel synchronous designs where bootstrap or isolated drivers are already implemented.

Compared with IRF4905PbF, IRF4905STRRPBF delivers superior thermal performance in surface-mount layouts; versus STP40NF10L, it avoids gate-drive complexity but trades off higher voltage rating and slightly higher R_DS(on) - making it optimal for cost-sensitive, thermally constrained 12–24 V P-channel applications.

Availability

IRF4905STRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, H-bridge motor drivers, automotive lighting control, and UPS inverter stages requiring stable component supply and long-term production continuity.

Supply support for IRF4905STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications - designed specifically for ruggedized switching in thermally demanding environments.

FAQ

What is the maximum allowable gate-to-source voltage for IRF4905STRRPBF?

The absolute maximum V_GS rating is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is -10 V for full enhancement and -5 V for partial turn-on in linear-mode applications. Gate drive must remain within this limit even during transient conditions such as ringing or overshoot.

Can IRF4905STRRPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized resistance increases with junction temperature) enables inherent current sharing when paralleled. However, matched gate drive layout, symmetrical PCB traces, and individual gate resistors (≥2.6 Ω) are required to ensure balanced dynamic turn-on and prevent oscillation or current hogging.

Does IRF4905STRRPBF have avalanche ruggedness certified per industry standards?

Yes - it is tested and rated for single-pulse avalanche energy (E_AS = 790 mJ) and repetitive avalanche (E_AR) up to T_jmax, per JEDEC JESD24-11. Avalanche capability is validated across production lots using standardized unclamped inductive test circuits (Fig. 12a/b), with no derating required below 150°C junction temperature.

Is the body diode suitable for continuous freewheeling conduction?

Yes - the integral body diode supports continuous source current up to -42 A at T_C = 25°C, with V_SD = -1.3 V and soft reverse recovery (Q_rr = 150–220 nC). For sustained freewheeling, ensure junction temperature remains ≤150°C and average power dissipation stays within the SOA limits defined in Fig. 8.

IRF4905STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF4905STRRPBF FAQ

1.How can I place an order for IRF4905STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF4905STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF4905STRRPBF reliable?

The price and inventory of IRF4905STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF4905STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF4905STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF4905STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF4905STRRPBF?

IRF4905STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF4905STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF4905STRRPBF?

For technical support, including IRF4905STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF4905STRRPBF requirements.

6.How does Aetrix verify that IRF4905STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF4905STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF4905STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF4905STRRPBF?

All IRF4905STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF4905STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF4905STRRPBF part is unused and in its original packaging.

Return procedure for IRF4905STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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