Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRF520NS

Part No.:
IRF520NS
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF520NS.pdf
Description:
MOSFET N-CH 100V 9.7A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,219

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRF520NS from Infineon Technologies (formerly International Rectifier) is a 100V, 9.2A, 0.27Ω N-channel enhancement-mode MOSFET in TO-220AB package, designed for medium-power switching applications including DC-DC converters, motor drivers, and power supplies.

For engineers reviewing the IRF520NS datasheet, IRF520NS pinout, IRF520NS application, or IRF520NS equivalent, key selection criteria include RDS(on) at VGS = 10V, continuous drain current rating, thermal resistance (RθJA = 62°C/W), and gate charge (Qg = 24nC) for PWM-driven switching efficiency.

Technical Context

This MOSFET features a planar silicon-gate process with optimized cell pitch and trench-free structure, delivering low conduction loss and fast turn-on/turn-off characteristics. Its threshold voltage (VGS(th)) ranges from 2.0V to 4.0V, enabling compatibility with 3.3V and 5V logic-level gate drivers.

The device supports avalanche-rated operation up to EAS = 110mJ and exhibits 100% UIS-tested ruggedness. Its SOA curve is defined for both linear-mode and pulse-width-limited operation, supporting reliable use in inductive load switching.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100V - maximum drain-source blocking voltage for 24V–48V bus systems
ID (continuous)9.2A @ TC = 25°C - usable up to ~6.5A at 100°C case temperature
RDS(on)0.27Ω @ VGS = 10V - enables <1.5W conduction loss at 6A
Qg24nC - determines gate drive power and switching speed in 20–100kHz PWM
RθJA62°C/W - requires heatsink for >2W dissipation in still-air ambient
EAS110mJ - supports single-pulse inductive energy absorption without failure

Pinout & Package

IRF520NS is housed in a through-hole TO-220AB package with standard lead frame plating (Pb-free per J-STD-020). The package provides mechanical robustness and thermal path via the drain-connected tab.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current output terminalElectrically connected to metal tab; must be insulated from heatsink unless referenced to system ground
GateControl inputHigh-impedance MOS gate requiring <1µA bias; sensitive to ESD; needs series resistor (~10–47Ω) for ringing suppression
SourceReference node for gate drive and current returnCommon node for low-side switch configuration; defines VGS reference point

Key Features

FeatureDesign Value
Fast switching with low QgEnables efficient 50–100kHz operation in SMPS with minimal driver overhead
Avalanche-rated (UIS)Guarantees single-pulse reliability under inductive turn-off stress without external snubber
Logic-level compatible VGS(th)Turns on fully with 5V microcontroller GPIO, eliminating need for level-shifting circuitry
TO-220AB mechanical standardizationEnsures drop-in replacement across legacy designs using industry-standard footprint and mounting hole pattern

Applications

DC Motor ControlSwitching Power Supply

Use Scenario: H-bridge or half-bridge driving of 12–24V brushed DC motors in industrial actuators and robotics.

IC Role / Device Role / Timing Role: Low-side or high-side power switch controlling motor direction and speed via PWM.

Use Value: 0.27Ω RDS(on) limits I²R loss to <1W at 6A, reducing thermal derating in compact enclosures.

Use Scenario: Primary-side switching element in 30–100W offline flyback or forward converters.

IC Role / Device Role / Timing Role: Main power switch synchronizing with controller IC (e.g., UC3842) at 65kHz.

Use Value: 110mJ EAS withstands transformer leakage energy during MOSFET turn-off without clamping diode.

LED Constant-Current DriverIndustrial Relay Replacement

Use Scenario: High-brightness LED string dimming in signage and architectural lighting.

IC Role / Device Role / Timing Role: Series-pass switch modulated by analog or PWM signal to regulate LED current.

Use Value: Linear-mode SOA allows stable operation at VDS = 20–40V and ID = 1–3A for analog dimming without oscillation.

Use Scenario: Solid-state replacement for electromechanical relays in PLC output modules and HVAC control panels.

IC Role / Device Role / Timing Role: Load-switching element interfacing with 24V DC control logic and 120V AC/24V DC loads.

Use Value: 100V VDS rating supports direct switching of 24V industrial buses with margin for transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP10NK60ZFP600V VDS, 10A ID, higher RDS(on) (0.75Ω), Zener-protected gateBetter for 400V+ flyback or PFC stages; unsuitable for low-voltage, high-current motor driveChoose when higher breakdown voltage is required and conduction loss budget allows >2× RDS(on)
IRFZ44N55V VDS, 49A ID, lower RDS(on) (0.028Ω), same TO-220AB packageOptimized for 12–24V high-current loads; insufficient for 48V bus or 100V transient immunityPrefer for battery-powered motor drives where VDS ≤ 55V and <100mΩ RDS(on) is critical

Compared with STP10NK60ZFP and IRFZ44N, the IRF520NS occupies a mid-voltage, mid-current niche-offering optimal balance of 100V robustness, 9.2A capability, and 0.27Ω conduction loss for 24–48V industrial switching where cost and thermal footprint constrain higher-performance alternatives.

Availability

IRF520NS is available at Aetrix Electronics and suitable for DC motor control, switching power supply design, and industrial relay replacement requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF520NS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-reliability power semiconductors for industrial, automotive, and consumer applications.

The IRF520NS belongs to the legacy HEXFET® power MOSFET product line, engineered for rugged, cost-effective switching in medium-power industrial and embedded power conversion systems.

FAQ

Is IRF520NS logic-level compatible?

Yes. With a gate threshold voltage (VGS(th)) range of 2.0V–4.0V and full enhancement at VGS = 10V, it operates reliably with standard 5V TTL/CMOS logic outputs. However, for guaranteed RDS(on) ≤ 0.27Ω, a 10V gate drive is recommended.

What is the maximum safe operating temperature for IRF520NS?

The junction temperature must not exceed 175°C. At TC = 25°C, continuous ID is rated 9.2A; this derates linearly to ~4.5A at TC = 100°C. Thermal design must ensure RθJA ≤ 62°C/W with appropriate heatsinking for power dissipation above 1.5W.

Can IRF520NS replace IRF530 in existing designs?

Yes, with verification. IRF520NS (100V, 9.2A, 0.27Ω) has identical pinout and package but lower VDS and RDS(on) than IRF530 (100V, 14A, 0.27Ω). It is a functional substitute where 9.2A suffices and gate drive remains ≥10V; check peak current and SOA margins in inductive loads.

Does IRF520NS require a gate resistor?

Yes. A series gate resistor (10–47Ω) is recommended to dampen parasitic oscillation caused by gate-drain capacitance and PCB trace inductance. This improves switching stability and reduces EMI, especially in high-frequency PWM applications above 20kHz.

IRF520NS Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
330 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 48W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRF520NS FAQ

1.How can I place an order for IRF520NS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF520NS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF520NS reliable?

The price and inventory of IRF520NS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF520NS is usually 5 days.

3.What payment methods are accepted for IRF520NS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF520NS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF520NS?

IRF520NS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF520NS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF520NS?

For technical support, including IRF520NS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF520NS requirements.

6.How does Aetrix verify that IRF520NS is sourced from the original manufacturer or authorized distributors?

All IRF520NS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF520NS meets industry standards.

7.What is the process for return or replacement of IRF520NS?

All IRF520NS units undergo pre-shipment inspection (PSI). If there is an issue with IRF520NS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF520NS part is unused and in its original packaging.

Return procedure for IRF520NS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRF520NS Tags

  • IRF520NS
  • IRF520NS PDF
  • IRF520NS Datasheet
  • IRF520NS Specifications
  • IRF520NS Images
  • Infineon Technologies
  • Infineon Technologies IRF520NS
  • Buy IRF520NS
  • IRF520NS Price
  • IRF520NS Distributor
  • IRF520NS Supplier
  • IRF520NS Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER