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Infineon Technologies IRF5210L
- Part No.:
- IRF5210L
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF5210L.pdf
- Description:
- MOSFET P-CH 100V 40A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:4,445
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Product details
Overview
IRF5210L from Infineon Technologies is a P-channel enhancement-mode MOSFET in D2Pak (TO-262) package, rated for -100 V V(BR)DSS, 60 mΩ RDS(on) at VGS = -10 V, and -38 A continuous drain current at TC = 25°C. It features 150°C maximum junction temperature, fast switching (tr = 63 ns, tf = 55 ns), and rated repetitive avalanche energy (EAR = 120 mJ).
For engineers reviewing the IRF5210L datasheet, IRF5210L pinout, IRF5210L application, or IRF5210L equivalent, key selection criteria include its low RDS(on) for high-efficiency synchronous rectification, robust body diode (VSD = -1.6 V, trr = 170–260 ns), and thermal performance (RθJC = 0.75 °C/W) in high-power DC-DC and motor control topologies.
Technical Context
This device operates as a high-side or bidirectional switch in hard-switched and resonant power converters. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard logic-level gate drivers, while the 150 nC typical total gate charge supports moderate-frequency PWM operation up to ~100 kHz without excessive driver loss.
The integrated body diode exhibits controlled reverse recovery (Qrr = 1180–1770 nC) and dv/dt immunity up to 300 V/ns, enabling use in freewheeling paths where commutation stress is present. Thermal design is anchored by its low junction-to-case resistance (0.75 °C/W), allowing direct heatsink mounting in industrial motor drives and UPS systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -100 V - Withstands 100 V drain-source blocking voltage before avalanche conduction begins. |
| RDS(on) | 60 mΩ max @ VGS = -10 V, TJ = 25°C - Enables <1.5 W conduction loss at -38 A, critical for high-current DC-DC output stages. |
| ID (cont) | -38 A @ TC = 25°C - Supports high-power load switching when mounted on adequate heatsink. |
| Qg | 150–230 nC - Determines gate drive power requirement; compatible with common 1–2 A peak gate drivers. |
| tr / tf | 63 ns / 55 ns - Enables efficient switching at 50–100 kHz in SMPS with minimized overlap loss. |
| EAS | 170 mJ - Single-pulse avalanche capability allows safe operation during transient overvoltage events. |
| RθJC | 0.75 °C/W - Enables direct thermal path to heatsink; junction rise is ≤75°C at 100 W dissipation. |
Pinout & Package
IRF5210L uses the D2Pak (TO-262) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard S-D-G order (Source–Drain–Gate) on the bottom side of the molded body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current sink terminal | Internally connected to exposed copper pad; must be soldered to large PCB copper pour or heatsink for thermal management. |
| Source (S) | Main current source terminal | Common reference node for gate drive and load return; carries full load current and body diode forward current. |
| Gate (G) | Control input | High-impedance MOS control node; requires negative VGS (-10 V typical) for full enhancement; sensitive to ESD. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 60 mΩ max enables <1.5 W conduction loss at -38 A, reducing thermal burden in high-current switches. |
| 150°C operating junction | Rated for continuous operation up to TJ = 150°C, supporting compact designs in sealed enclosures or high-ambient environments. |
| Repetitive avalanche rating | 120 mJ EAR allows repeated inductive turn-off energy absorption without degradation-critical in relay/snubberless motor drive circuits. |
| Fast body diode | trr = 170–260 ns and Qrr = 1180–1770 nC support efficient freewheeling in half-bridge and synchronous rectifier configurations. |
Applications
| Motor Drive Inverter Stage | High-Voltage DC-DC Converter |
|---|---|
Use Scenario: Half-bridge high-side switch in 48 V–96 V BLDC motor inverters driving industrial pumps or fans. IC Role / Device Role / Timing Role: P-channel high-side switch handling bidirectional current and body-diode freewheeling during PWM dead-time. Use Value: Low RDS(on) minimizes conduction loss at 30–40 A RMS; 150°C rating sustains operation under forced-air-limited cooling. | Use Scenario: Primary-side synchronous rectifier in isolated 100 V input, 12 V output LLC resonant converter for telecom power supplies. IC Role / Device Role / Timing Role: Secondary-side P-channel MOSFET used in active clamp or synchronous rectification topology. Use Value: Fast trr and low Qrr reduce switching loss during zero-voltage switching transitions; robust avalanche withstands transformer leakage spikes. |
| Uninterruptible Power Supply (UPS) | Industrial DC Bus Protection |
Use Scenario: Bidirectional battery interface switch in online double-conversion UPS systems with 96 V nominal battery bank. IC Role / Device Role / Timing Role: High-side P-MOSFET controlling battery charge/discharge path with reverse polarity protection. Use Value: Integrated body diode provides inherent reverse-current blocking; -100 V rating accommodates battery float voltage + surge margin. | Use Scenario: Load disconnect switch protecting 48 V DC distribution bus in factory automation PLC backplanes. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical contactor, enabling fast fault isolation and hot-swap capability. Use Value: Repetitive avalanche rating absorbs inductive kickback from solenoid loads; RθJC = 0.75 °C/W supports derating-free operation at 25 A continuous. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPbF | RDS(on) = 200 mΩ @ VGS = -10 V; lower ID (−23 A); TO-220 package | Limited to ≤15 A continuous in PCB-mount applications due to higher RθJA | Select when cost sensitivity outweighs efficiency needs and thermal budget permits higher conduction loss. |
| STP100P3LLH6 | RDS(on) = 12.5 mΩ @ VGS = -10 V; higher ID (−100 A); TO-220FP package; 40 V V(BR)DSS | Not suitable for ≥80 V systems; superior for 24–48 V high-current battery switches | Choose only for low-voltage, ultra-high-current applications where 100 V rating is unnecessary. |
Compared with IRF9540NPbF and STP100P3LLH6, the IRF5210L uniquely balances -100 V rating, 60 mΩ RDS(on), and D2Pak thermal performance-making it optimal for 48–96 V industrial power stages requiring both voltage headroom and conduction efficiency.
Availability
IRF5210L is available at Aetrix Electronics and suitable for motor drive inverters, high-voltage DC-DC converters, uninterruptible power supplies, and industrial DC bus protection requiring stable component supply and long-term manufacturability.
Supply support for IRF5210L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF5210L belongs to Infineon's legacy HEXFET® P-channel MOSFET product line, designed specifically for high-reliability, high-power linear and switching applications in harsh thermal and electrical environments.
FAQ
What is the maximum safe gate-to-source voltage for IRF5210L?
The absolute maximum VGS rating is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable enhancement, apply -10 V to ensure full RDS(on) conduction; -5.5 V is the minimum recommended for guaranteed turn-on across temperature and process variation.
Can IRF5210L be used in parallel configurations?
Yes-its negative temperature coefficient of RDS(on) supports current sharing. However, individual gate resistors (≥10 Ω) and matched layout parasitics are required to prevent oscillation and uneven dynamic current division during switching transitions.
Does IRF5210L have avalanche ruggedness for inductive load switching?
Yes-it is explicitly rated for repetitive avalanche energy (EAR = 120 mJ) and single-pulse avalanche (EAS = 170 mJ). This enables safe operation during inductive turn-off without external snubbers in motor drive and solenoid control applications.
How does the D2Pak package affect thermal design compared to TO-220?
The D2Pak's exposed drain pad offers significantly lower RθJC (0.75 °C/W vs. ~1.5 °C/W for TO-220), enabling ~2× higher power dissipation at the same case temperature. It requires full-solder coverage of the pad to a thermal plane or heatsink for rated performance.
IRF5210L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF5210L FAQ
1.How can I place an order for IRF5210L through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF5210L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF5210L reliable?
The price and inventory of IRF5210L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5210L is usually 5 days.
3.What payment methods are accepted for IRF5210L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5210L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF5210L?
IRF5210L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF5210L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF5210L?
For technical support, including IRF5210L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5210L requirements.
6.How does Aetrix verify that IRF5210L is sourced from the original manufacturer or authorized distributors?
All IRF5210L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5210L meets industry standards.
7.What is the process for return or replacement of IRF5210L?
All IRF5210L units undergo pre-shipment inspection (PSI). If there is an issue with IRF5210L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF5210L part is unused and in its original packaging.
Return procedure for IRF5210L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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