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Infineon Technologies IRF5210SPBF
- Part No.:
- IRF5210SPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF5210SPBF.pdf
- Description:
- MOSFET P-CH 100V 38A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,248
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Product details
Overview
IRF5210SPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in D2Pak (TO-263) package, rated for -100 V V(BR)DSS, 60 mΩ RDS(on) at VGS = -10 V and ID = -38 A, with 150°C maximum junction temperature and fast switching (tr = 63 ns, tf = 55 ns). It serves as a high-efficiency synchronous rectifier or high-side switch in DC-DC converters and motor control H-bridges.
For engineers reviewing the IRF5210SPBF datasheet, IRF5210SPBF pinout, IRF5210SPBF application, or IRF5210SPBF equivalent, key selection criteria include its ultra-low on-resistance, repetitive avalanche capability (EAR = 120 mJ), body diode recovery performance (trr = 170–260 ns), and thermal robustness under continuous 100°C case operation.
Technical Context
This MOSFET employs advanced planar process technology optimized for high-voltage P-channel operation. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard logic-level gate drivers, while the low 150 nC typical total gate charge supports efficient high-frequency PWM control up to several hundred kHz.
The integrated body diode exhibits VSD = -1.6 V at IS = -23 A and controlled reverse recovery (Qrr = 1180–1770 nC), enabling use in freewheeling paths without external Schottky supplementation in medium-power applications. Thermal design is supported by RθJC = 0.75°C/W and RθJA = 40°C/W (PCB mount).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -100 V - Withstands 100 V drain-source blocking voltage before avalanche conduction. |
| RDS(on) | 60 mΩ max @ VGS = -10 V, ID = -38 A - Enables <1.5 W conduction loss at 38 A, critical for thermal management. |
| Qg | 150–230 nC - Determines gate drive power requirement and switching speed in hard-switched topologies. |
| tr / tf | 63 ns / 55 ns - Supports >500 kHz switching in buck or half-bridge configurations with minimal overlap loss. |
| EAS | 170 mJ - Single-pulse avalanche energy rating allows safe operation during transient overvoltage events. |
| TJ max | 150°C - Permits sustained operation in sealed enclosures or high-ambient industrial environments. |
| trr | 170–260 ns - Body diode recovery time impacts shoot-through risk and EMI in synchronous rectification. |
Pinout & Package
IRF5210SPBF uses the surface-mount D2Pak (TO-263) package with exposed drain pad for thermal enhancement. The three terminals are arranged in standard G-D-S order (Gate–Drain–Source) when viewed from top with marking side up and tab facing away.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives negative gate drive relative to source to turn on P-channel channel; threshold -2.0 to -4.0 V. |
| Drain (D) | High-side current sink | Connected to input rail or motor phase; electrically tied to exposed copper pad for heat dissipation. |
| Source (S) | Reference node | Serves as return path and gate reference; must be routed with low inductance to minimize ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 60 mΩ max enables <1.5 W conduction loss at full rated current, reducing heatsink requirements. |
| Repetitive avalanche rated | EAR = 120 mJ allows repeated inductive switching stress without degradation-critical for motor drives. |
| Fast body diode recovery | trr = 170–260 ns and Qrr = 1180–1770 nC reduce switching losses and EMI in synchronous rectifiers. |
| 150°C junction rating | Supports operation in sealed industrial enclosures or automotive under-hood ambient conditions up to 100°C. |
| D2Pak thermal performance | RθJC = 0.75°C/W enables >50 W power dissipation with moderate heatsinking via the exposed drain pad. |
Applications
| DC-DC Synchronous Rectifier | H-Bridge Motor Driver |
|---|---|
Use Scenario: Secondary-side rectification in isolated 48 V–12 V buck-derived telecom or server PSUs. IC Role / Device Role / Timing Role: P-channel MOSFET operating as low-side synchronous rectifier with gate driven by dedicated controller. Use Value: Replaces Schottky diode to cut conduction loss by >60%, improving efficiency from 92% to 95% at 20 A load. | Use Scenario: High-side switch in 24 V brushed DC motor driver for industrial actuators. IC Role / Device Role / Timing Role: Upper-leg P-channel switch in half-bridge configuration, commutated at 20 kHz. Use Value: 60 mΩ RDS(on) limits voltage drop to <1.5 V at 25 A, preserving torque and reducing thermal derating. |
| Uninterruptible Power Supply (UPS) | Industrial Inverter Output Stage |
Use Scenario: Battery disconnect and reverse-current protection in line-interactive UPS battery bank interface. IC Role / Device Role / Timing Role: Bidirectional blocking switch controlling battery-to-inverter path with body diode conducting reverse current. Use Value: -100 V rating withstands 48 V nominal battery stack transients; repetitive avalanche handles load dump surges. | Use Scenario: Phase-leg switch in 3-phase 400 VAC industrial inverter output stage driving induction motors. IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid topology where fast switching complements slower high-voltage devices. Use Value: 55 ns fall time minimizes cross-conduction window, reducing shoot-through risk during dead-time transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP100P06 | 60 V V(BR)DSS, 12.5 mΩ RDS(on), TO-220 package | Limited to ≤60 V systems; lower RDS(on) but reduced voltage margin | Preferable only in cost-sensitive 48 V designs where voltage headroom <20 V suffices. |
| IXTP120P05T | 50 V V(BR)DSS, 12.5 mΩ RDS(on), TO-220, 175°C TJ max | Half the voltage rating; higher temperature capability but unsuitable for 100 V bus rails | Only viable in 24–36 V battery systems requiring extended thermal margin beyond 150°C. |
Compared with STP100P06 and IXTP120P05T, IRF5210SPBF uniquely balances -100 V rating, 60 mΩ on-resistance, and D2Pak thermal performance-making it the sole option among the three for 48–72 V industrial DC bus applications demanding both voltage margin and power density.
Availability
IRF5210SPBF is available at Aetrix Electronics and suitable for DC-DC synchronous rectifiers, H-bridge motor drivers, uninterruptible power supplies, and industrial inverter output stages requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF5210SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF5210SPBF belongs to Infineon's legacy HEXFET® P-channel MOSFET product line, engineered for high-reliability industrial power conversion where voltage margin, avalanche ruggedness, and thermal stability are prioritized over ultra-low gate charge.
FAQ
What is the maximum continuous drain current for IRF5210SPBF at 100°C case temperature?
The maximum continuous drain current is -24 A at TC = 100°C and VGS = -10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package and silicon die at elevated temperatures, not electrical failure-operation above this current requires active cooling or pulse-width limitation.
Does IRF5210SPBF have a built-in body diode, and what are its key parameters?
Yes, IRF5210SPBF integrates a planar body diode with VSD = -1.6 V at IS = -23 A and reverse recovery time trr = 170–260 ns. Its Qrr is 1180–1770 nC, and it supports repetitive avalanche up to EAR = 120 mJ, making it suitable for freewheeling and synchronous rectification without external diodes.
Can IRF5210SPBF be used in parallel with identical units for higher current handling?
Yes, but only with careful layout: matched gate drive impedance, symmetrical PCB trace lengths, and Kelvin-source connections to ensure current sharing. The device's positive RDS(on) temperature coefficient promotes inherent current balancing, though thermal coupling between packages must be minimized to avoid runaway.
What is the recommended gate resistor value for hard-switching at 200 kHz?
A 10 Ω gate resistor is recommended for 200 kHz hard-switching with IRF5210SPBF, balancing switching speed (to limit overlap loss) and gate drive current (≤±2 A peak). Lower values increase EMI and gate driver stress; higher values slow turn-off, raising trr-related losses in synchronous rectifier mode.
IRF5210SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 230 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2780 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 170W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF5210SPBF FAQ
1.How can I place an order for IRF5210SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF5210SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF5210SPBF reliable?
The price and inventory of IRF5210SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5210SPBF is usually 5 days.
3.What payment methods are accepted for IRF5210SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5210SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF5210SPBF?
IRF5210SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF5210SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF5210SPBF?
For technical support, including IRF5210SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5210SPBF requirements.
6.How does Aetrix verify that IRF5210SPBF is sourced from the original manufacturer or authorized distributors?
All IRF5210SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5210SPBF meets industry standards.
7.What is the process for return or replacement of IRF5210SPBF?
All IRF5210SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5210SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF5210SPBF part is unused and in its original packaging.
Return procedure for IRF5210SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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