Infineon Technologies IRF5210STRR

Overview

IRF5210STRR from Infineon Technologies is a P-channel enhancement-mode MOSFET designed for high-power switching in DC-DC converters, motor drives, and load switching circuits. It delivers -100 V V(BR)DSS, 60 mΩ RDS(on) at VGS = -10 V, -38 A continuous drain current at TC = 25°C, and operates up to 150°C junction temperature - enabling robust performance in industrial power supplies and uninterruptible power systems.

For engineers reviewing the IRF5210STRR datasheet, IRF5210STRR pinout, IRF5210STRR application, or IRF5210STRR equivalent, key selection criteria include its ultra-low on-resistance, fast switching (tr = 63 ns, tf = 55 ns), repetitive avalanche rating (EAR = 120 mJ), body diode recovery characteristics (trr = 170–260 ns), and D2Pak (TO-263) surface-mount package compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs advanced planar process technology optimized for low RDS(on) and high avalanche ruggedness. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on control under negative bias, while the 150°C maximum operating junction temperature supports operation in thermally constrained enclosures without derating penalties.

The integrated body diode exhibits VSD = -1.6 V at IS = -23 A and reverse recovery charge Qrr = 1180–1770 nC, making it suitable for synchronous rectification and freewheeling paths where controlled diode conduction and recovery are critical to efficiency and EMI management.

Key Specifications

Pinout & Package

IRF5210STRR is housed in a D2Pak (TO-263) surface-mount package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low thermal resistance (RθJC = 0.75 °C/W) and serves as the primary heat transfer path to the PCB copper plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Compared with STP100P06 and IXTP120P05T, IRF5210STRR uniquely balances 100 V blocking, 60 mΩ on-resistance, D2Pak thermal performance, and repetitive avalanche capability - making it the only viable option for 48–100 V industrial switching applications requiring both voltage headroom and ruggedness.

Availability

IRF5210STRR is available at Aetrix Electronics and suitable for industrial DC-DC converters, uninterruptible power supplies (UPS), and motor drive half-bridges requiring stable component supply across multi-year production cycles.

Supply support for IRF5210STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF5210STRR belongs to Infineon's legacy HEXFET® P-channel MOSFET product line, engineered for high-reliability power switching in industrial, telecom, and renewable energy systems where voltage robustness and thermal resilience are critical.

FAQ

What is the maximum continuous drain current for IRF5210STRR at 100°C case temperature?

The maximum continuous drain current ID at TC = 100°C is -24 A, specified at VGS = -10 V. This reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated temperatures, requiring careful thermal design to maintain safe junction temperature below 150°C.

Does IRF5210STRR have a built-in body diode, and what are its key parameters?

Yes, IRF5210STRR integrates a planar body diode with VSD = -1.6 V at IS = -23 A, trr = 170–260 ns, and Qrr = 1180–1770 nC. These values are measured under standardized conditions (IF = -23 A, di/dt = -100 A/µs, TJ = 25°C) and define its freewheeling behavior in inductive switching applications.

Can IRF5210STRR be used in parallel configurations, and what layout considerations apply?

Yes, IRF5210STRR supports paralleling for higher current capacity. Critical layout requirements include matched gate trace lengths, Kelvin source connections to minimize common-source inductance, symmetrical thermal coupling to the PCB, and individual gate resistors (≥10 Ω) to suppress oscillation and ensure current sharing stability.

Is IRF5210STRR lead-free and RoHS compliant?

Yes, IRF5210STRR is lead-free and RoHS compliant, as confirmed by Infineon's official documentation and packaging markings (PbF suffix). It meets EU Directive 2011/65/EU and is compatible with standard lead-free reflow profiles (peak temperature ≤ 260°C, 20–40 sec above 217°C).