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Infineon Technologies IRF5210STRRPBF
- Part No.:
- IRF5210STRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF5210STRRPBF.pdf
- Description:
- MOSFET P-CH 100V 38A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,298
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Product details
Overview
IRF5210STRRPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET designed for high-power switching in DC-DC converters, motor drives, and load switching circuits. It delivers -100 V V(BR)DSS, 60 mΩ RDS(on) at VGS = -10 V, -38 A continuous drain current at TC = 25°C, and operates up to 150°C junction temperature.
For engineers reviewing the IRF5210STRRPBF datasheet, IRF5210STRRPBF pinout, IRF5210STRRPBF application, or IRF5210STRRPBF equivalent, key selection criteria include its ultra-low on-resistance, fast switching (tr = 63 ns, tf = 55 ns), repetitive avalanche rating (EAR = 120 mJ), and D2Pak (TO-263) surface-mount package suitability for high-current PCB layouts.
Technical Context
This MOSFET uses advanced planar process technology optimized for high-voltage P-channel operation. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard logic-level gate drivers, while the low 150 nC typical total gate charge enables efficient high-frequency PWM control.
The integrated body diode supports freewheeling in inductive loads, with VSD = -1.6 V at IS = -23 A and trr = 170–260 ns. Thermal design is supported by RθJC = 0.75 °C/W and RθJA = 40 °C/W (PCB mount), enabling stable operation under sustained conduction in industrial power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -100 V - Withstands 100 V drain-source blocking voltage before avalanche onset |
| RDS(on) | 60 mΩ max @ VGS = -10 V - Enables <1.5 W conduction loss at -38 A DC |
| ID (TC=25°C) | -38 A - Continuous safe operating current with heatsink at 25°C case temp |
| Qg | 150–230 nC - Determines gate drive power and switching speed in hard-switched topologies |
| EAS | 170 mJ - Single-pulse avalanche energy rating protects against inductive switching transients |
| TJ max | +150°C - Allows operation in sealed enclosures or high-ambient environments without derating |
| tr / tf | 63 ns / 55 ns - Fast edge rates reduce switching losses in 100–500 kHz SMPS designs |
Pinout & Package
IRF5210STRRPBF is housed in a D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 10.67 mm × 9.65 mm × 4.83 mm and is RoHS-compliant and lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Controls channel conduction; requires -10 V for full enhancement; input capacitance Ciss = 2780 pF |
| Pin 2 (D) | Drain | Main high-side current path; electrically tied to exposed metal tab; handles -100 V blocking |
| Pin 3 (S) | Source | Reference node for gate drive; connects to load return; body diode anode |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 60 mΩ max enables <1.5 W conduction loss at rated current, reducing heatsink requirements |
| Repetitive avalanche rated | EAR = 120 mJ allows repeated inductive turn-off stress without degradation |
| Fast switching performance | tr = 63 ns, tf = 55 ns minimizes transition losses in high-frequency DC-DC converters |
| 150°C junction rating | Supports operation in thermally constrained industrial and automotive under-hood applications |
| Low gate charge | Qg = 150 nC typical reduces gate driver power and simplifies isolated gate drive design |
Applications
| High-Voltage DC-DC Converters | Half-Bridge Motor Drives |
|---|---|
Use Scenario: 48 V–400 V isolated buck-boost converters in telecom power supplies and battery management systems. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch handling bidirectional power flow with low conduction loss. Use Value: 60 mΩ RDS(on) cuts conduction loss by >35% vs. legacy P-channel MOSFETs, improving efficiency at 20–50 A loads. | Use Scenario: 24–48 V brushed DC motor H-bridge drivers in industrial actuators and robotics. IC Role / Device Role / Timing Role: Upper-leg switch controlling motor voltage polarity; body diode provides freewheeling path during PWM off-time. Use Value: 170 ns trr and 1180 nC Qrr minimize diode recovery loss and EMI during commutation at 20 kHz PWM. |
| Industrial Load Switching | UPS Output Stage |
Use Scenario: Hot-swap and inrush current limiting in programmable power supplies and PLC I/O modules. IC Role / Device Role / Timing Role: Low-side or high-side load switch with controlled turn-on via gate resistor network. Use Value: -100 V V(BR)DSS and -38 A ID rating support 48 V/30 A industrial bus protection with margin. | Use Scenario: Inverter output stage in line-interactive UPS systems delivering clean 230 VAC sine wave. IC Role / Device Role / Timing Role: High-voltage P-channel switch in half-bridge configuration driving transformer primary. Use Value: Repetitive avalanche capability (EAR = 120 mJ) sustains reliability during grid anomaly-induced overvoltage events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP100P06 | V(BR)DSS = -60 V, RDS(on) = 12 mΩ @ VGS = -10 V - lower voltage rating, lower on-resistance | Suitable only for ≤60 V systems; not interchangeable in 100 V designs | Select when system voltage ≤60 V and lowest possible conduction loss is critical |
| IXTP120P05T | V(BR)DSS = -50 V, RDS(on) = 10.5 mΩ, TO-220 package - lower voltage, through-hole mounting | Limited to 50 V applications; lacks D2Pak thermal performance for high-current SMT use | Prefer for prototyping or low-volume through-hole builds where 50 V rating suffices |
Compared with STP100P06 and IXTP120P05T, IRF5210STRRPBF uniquely balances -100 V blocking, D2Pak thermal efficiency, and robust avalanche capability-making it the only viable choice for 100 V industrial SMT power switches requiring field reliability.
Availability
IRF5210STRRPBF is available at Aetrix Electronics and suitable for high-voltage DC-DC converters, half-bridge motor drives, and industrial load switching requiring stable component supply across multi-year production cycles.
Supply support for IRF5210STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
The StrongIRFET™ product line, which includes IRF5210STRRPBF, is engineered for rugged high-power switching in harsh-environment applications-emphasizing avalanche robustness, thermal stability, and long-term reliability in industrial motor controls and power conversion.
FAQ
What is the maximum continuous drain current for IRF5210STRRPBF at 100°C case temperature?
The maximum continuous drain current is -24 A at TC = 100°C and VGS = -10 V, per the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated temperatures, requiring appropriate heatsinking for sustained operation.
Does IRF5210STRRPBF have a built-in body diode, and what are its key parameters?
Yes, it integrates a planar body diode with VSD = -1.6 V at IS = -23 A, trr = 170–260 ns, and Qrr = 1180–1770 nC. These values are measured under standardized conditions (VDD = -25 V, IF = -23 A, di/dt = -100 A/µs) and define freewheeling behavior in inductive switching applications.
Can IRF5210STRRPBF be used in synchronous rectification topologies?
No-it is a P-channel device with no internal synchronous rectifier control logic or dedicated SR pinout. While its low RDS(on) and fast switching support high-efficiency rectification in discrete configurations, it requires external gate timing control and is not a self-synchronizing SR controller IC.
What is the gate-to-source voltage range for reliable operation?
The specified gate-to-source voltage range is ±20 V absolute maximum, with functional threshold between -2.0 V and -4.0 V. For reliable enhancement-mode operation, VGS must be ≤ -4.0 V to ensure full channel turn-on; gate drive circuits must avoid exceeding ±20 V to prevent oxide damage.
IRF5210STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 230 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2780 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 170W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF5210STRRPBF FAQ
1.How can I place an order for IRF5210STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF5210STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF5210STRRPBF reliable?
The price and inventory of IRF5210STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5210STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF5210STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5210STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF5210STRRPBF?
IRF5210STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF5210STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF5210STRRPBF?
For technical support, including IRF5210STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5210STRRPBF requirements.
6.How does Aetrix verify that IRF5210STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF5210STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5210STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF5210STRRPBF?
All IRF5210STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5210STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF5210STRRPBF part is unused and in its original packaging.
Return procedure for IRF5210STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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