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Infineon Technologies IRF5305L

Part No.:
IRF5305L
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIRF5305L.pdf
Description:
MOSFET P-CH 55V 31A TO262
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,582

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Product details

Overview

IRF5305L from Infineon Technologies is a P-channel enhancement-mode MOSFET designed for high-efficiency power switching in DC-DC converters and motor control circuits. It features -55 V VDSS, -31 A ID (TC = 25°C), RDS(on) ≤ 0.06 Ω at VGS = -10 V, and TO-220AB package with isolated tab. Used in synchronous rectification stages of offline SMPS.

For engineers reviewing the IRF5305L datasheet, IRF5305L pinout, IRF5305L application, or IRF5305L equivalent, key selection criteria include gate threshold voltage consistency across temperature, safe operating area under repetitive avalanche conditions, and thermal resistance from junction-to-case for heatsink-limited designs.

Technical Context

This MOSFET operates in enhancement mode with negative gate drive, requiring VGS ≤ -2.0 V to initiate conduction and VGS ≤ -10 V for full on-state performance. Its body diode exhibits trr = 140 ns and Qrr = 190 nC, supporting hard-switched flyback and half-bridge topologies.

The device integrates a robust avalanche-rated structure (EAS = 380 mJ) and supports gate charge Qg = 65 nC at VGS = -10 V, enabling predictable turn-on/turn-off timing in high-frequency PWM circuits up to 200 kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS-55 V - maximum drain-source blocking voltage before avalanche breakdown
ID (TC = 25°C)-31 A - continuous drain current rating with infinite heatsink at case temperature
RDS(on)≤ 0.06 Ω @ VGS = -10 V - on-resistance directly impacts conduction loss in high-current paths
VGS(th)-2.0 to -4.0 V - gate threshold range determines minimum drive voltage needed for reliable turn-on
trr140 ns - reverse recovery time of integrated body diode, critical for snubberless operation
EAS380 mJ - single-pulse avalanche energy rating, enables robustness against inductive switching transients

Pinout & Package

IRF5305L uses the TO-220AB package with electrically isolated metal tab (drain-connected), standard 3-lead through-hole configuration, and lead-free plating per JEDEC J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output terminalElectrically isolated tab allows mounting to heatsink without insulating washer; connects directly to PCB copper pour for thermal management
GateControl input for channel conductionRequires negative voltage relative to source to turn on; sensitive to ESD with ±20 V absolute max rating
SourceReference node for gate drive and current returnServes as common reference for gate driver circuitry; ties to system ground or floating rail depending on topology

Key Features

FeatureDesign Value
100% avalanche testedGuarantees single-pulse energy handling up to 380 mJ without parameter shift or failure
Fast body diode recoverytrr = 140 ns enables reduced switching loss and lower EMI in discontinuous conduction mode
Low gate chargeQg = 65 nC minimizes driver power requirement and supports efficient gate driving at 100–200 kHz
Enhancement-mode P-channelEliminates need for high-side gate driver bootstrap circuitry in low-side switch configurations

Applications

DC-DC Synchronous RectifierIndustrial Motor Drive

Use Scenario: Secondary-side rectification in isolated 12 V output flyback converters for telecom power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85%.

Use Value: RDS(on) ≤ 0.06 Ω cuts forward voltage drop to <0.2 V at 20 A, reducing rectifier loss by >60% vs. 40 V/30 A Schottky.

Use Scenario: H-bridge leg in 24 V brushed DC motor controller for factory automation actuators.

IC Role / Device Role / Timing Role: High-current P-channel switch controlling motor direction and braking via complementary N-channel pairing.

Use Value: 31 A rating and 380 mJ avalanche capability tolerate motor stall currents and inductive kickback during rapid deceleration.

Offline SMPS Power SwitchLED Driver Current Sink

Use Scenario: Primary-side switching element in 65 W AC-DC adapter using quasi-resonant flyback topology.

IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with zero-voltage switching assistance.

Use Value: 55 V VDSS margin accommodates reflected output voltage plus leakage inductance spikes in universal-input designs.

Use Scenario: Constant-current sink for high-brightness LED strings in architectural lighting fixtures.

IC Role / Device Role / Timing Role: Linear current regulator controlled by analog dimming signal in non-isolated buck-derived topology.

Use Value: Low RDS(on) enables <1.5 V dropout at 2 A, maximizing usable bus voltage for longer LED chains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP55PF06VDSS = -60 V, RDS(on) = 0.055 Ω @ -10 V, TO-220FP package (non-isolated tab)Higher voltage rating but requires insulating hardware for heatsink mountingPreferred where higher blocking margin is required and mechanical isolation can be managed
IXTP30P05TVDSS = -50 V, RDS(on) = 0.075 Ω @ -10 V, TO-220AB package with isolated tabLower voltage rating and higher on-resistance, but tighter VGS(th) tolerance (±0.5 V)Selected when gate drive voltage stability is prioritized over conduction loss in low-power systems

Compared with STP55PF06 and IXTP30P05T, IRF5305L offers optimal balance of voltage margin, on-resistance, and mechanical compatibility for mid-power industrial switching-especially where isolated-tab mounting and 55 V blocking are design-critical.

Availability

IRF5305L is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and LED drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF5305L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line, which includes IRF5305L, is engineered for rugged power switching in harsh environments-emphasizing avalanche robustness, thermal stability, and repeatable parametric performance across temperature and lifetime.

FAQ

What is the maximum allowable gate-source voltage for IRF5305L?

The absolute maximum VGS rating is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable switching, gate drive should be clamped between -12 V (turn-on) and 0 V (turn-off), with transient overshoot limited to <±18 V using Zener clamping or active gate control.

Does IRF5305L have an integrated body diode, and what are its characteristics?

Yes, IRF5305L includes a fast-recovery intrinsic body diode with reverse recovery time trr = 140 ns and recovered charge Qrr = 190 nC at IF = -31 A and di/dt = 100 A/µs. This diode supports freewheeling in inductive loads and enables synchronous rectification without external diodes in many topologies.

Can IRF5305L be used in parallel configurations for higher current handling?

Yes, but only with careful attention to gate drive matching and current-sharing resistors. The device's positive temperature coefficient of RDS(on) promotes inherent current sharing above 100°C, yet layout asymmetry and gate loop inductance must be minimized to avoid dynamic imbalance during switching transitions.

Is the IRF5305L "L" suffix indicative of lead-free compliance?

Yes-the "L" suffix denotes lead-free termination per JEDEC J-STD-020, with matte tin plating on leads and compliant with RoHS Directive 2011/65/EU. The device is also halogen-free and meets IPC/JEDEC J-STD-709 requirements for green packaging.

IRF5305L Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262

IRF5305L FAQ

1.How can I place an order for IRF5305L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5305L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5305L reliable?

The price and inventory of IRF5305L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5305L is usually 5 days.

3.What payment methods are accepted for IRF5305L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5305L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5305L?

IRF5305L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5305L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5305L?

For technical support, including IRF5305L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5305L requirements.

6.How does Aetrix verify that IRF5305L is sourced from the original manufacturer or authorized distributors?

All IRF5305L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5305L meets industry standards.

7.What is the process for return or replacement of IRF5305L?

All IRF5305L units undergo pre-shipment inspection (PSI). If there is an issue with IRF5305L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5305L part is unused and in its original packaging.

Return procedure for IRF5305L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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