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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5305LPBF

Name: IRF5305LPBF
Brand: Infineon Technologies
SKU: IRF5305LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5305LPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF5305LPBF.pdf

Description:: MOSFET P-CH 55V 31A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF5305LPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in TO-220AB package, rated for -55 V V_DS, -31 A I_D (T_C = 25°C), R_DS(on) = 0.06 Ω (V_GS = -10 V), and 140 W P_D. It serves as a high-current power switch in DC-DC converters, motor control H-bridges, and reverse-polarity protection circuits.

For engineers reviewing the IRF5305LPBF datasheet, IRF5305LPBF pinout, IRF5305LPBF application, or IRF5305LPBF equivalent, key selection criteria include gate threshold voltage (-2 to -4 V), safe operating area (SOA) at 100 µs pulse width, thermal resistance R_θJC = 1.7°C/W, and lead-free RoHS-compliant packaging.

Technical Context

This MOSFET uses planar stripe silicon technology with optimized cell pitch for low conduction loss and robust avalanche capability. Its gate oxide thickness and doping profile support stable operation under repetitive unclamped inductive switching (UIS) up to 120 mJ at T_J = 25°C.

The device features a fully characterized body diode with t_rr = 120 ns and Q_rr = 190 nC at I_F = -31 A, V_R = -55 V, and dI_F/dt = -100 A/µs - enabling use in synchronous rectification and freewheeling paths without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–55 V: Maximum drain-source blocking voltage before avalanche breakdown; defines system bus voltage rating.
I_D (T_C = 25°C)	–31 A: Continuous DC current at case temperature 25°C; sets heatsink sizing baseline.
R_DS(on)	0.06 Ω @ V_GS = –10 V: On-resistance directly determines conduction loss (P = I²R) in high-current switches.
V_GS(th)	–2.0 to –4.0 V: Gate threshold range confirms logic-level compatibility with 3.3 V or 5 V microcontroller outputs.
E_AS	120 mJ: Single-pulse avalanche energy rating; enables reliable operation during inductive load turn-off transients.
R_θJC	1.7°C/W: Junction-to-case thermal resistance; used with heatsink R_θCA to calculate max junction temperature.

Pinout & Package

Package: TO-220AB, through-hole, single-ended heat sink mounting, lead-free (Pb-free) finish per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Power output node / Heat sink interface	Electrically connected to metal tab; must be electrically isolated from chassis unless circuit design requires common-drain configuration.
Source	Reference node for gate drive and current return path	Connected to ground or negative rail; defines V_GS reference point and carries full load current.
Gate	Control input for channel conduction	High-impedance MOS gate requiring <100 nC total gate charge (Q_g) for full turn-on; sensitive to ESD.

Key Features

Feature	Design Value
100% UIS tested	Each unit validated for unclamped inductive switching energy ≥120 mJ - ensures reliability in motor drive flyback events.
Low gate charge (Q_g = 65 nC)	Reduces driver power loss and enables faster switching with standard gate drivers like TC4420 or UCC27531.
Fast body diode (t_rr = 120 ns)	Minimizes reverse recovery loss in buck converter low-side switches and half-bridge freewheeling paths.
RoHS-compliant & halogen-free	Meets IPC-1752A material declaration requirements; supports environmental compliance for industrial and automotive end equipment.

Applications

DC-DC Power Conversion

Motor Control H-Bridge

Use Scenario: Synchronous rectifier in 12 V input, 5 V/20 A output buck converter.

IC Role / Device Role / Timing Role: Low-side power switch replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Achieves >92% efficiency at full load due to 0.06 Ω R_DS(on) and fast body diode recovery.

Use Scenario: High-current bidirectional 24 V brushed DC motor driver with PWM speed control.

IC Role / Device Role / Timing Role: Upper-leg P-channel switch in H-bridge topology; driven by level-shifted gate signals.

Use Value: Supports 31 A peak motor current with SOA-limited 100 µs pulse handling and minimal shoot-through risk.

Reverse Polarity Protection

Industrial Power Supply Sequencing

Use Scenario: Input protection for 48 V telecom power module against accidental battery reversal.

IC Role / Device Role / Timing Role: Series-connected P-MOSFET acting as ideal diode with ultra-low forward drop.

Use Value: Limits voltage drop to <1.8 V at 20 A (vs. ~0.7 V for Si diode), eliminating heat sink requirement.

Use Scenario: Controlled power-up sequencing of dual-rail FPGA core/I/O supplies in programmable logic systems.

IC Role / Device Role / Timing Role: Enable-controlled power switch for delayed 1.2 V rail activation after 3.3 V stabilization.

Use Value: Gate threshold range (–2 to –4 V) allows direct interfacing with 3.3 V supervisor IC outputs without level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55P06L-14	R_DS(on) = 0.014 Ω @ V_GS = –10 V; higher I_D = –55 A; TO-220FP package (shorter leads)	Better conduction efficiency at >25 A; limited SOA energy (75 mJ) vs. IRF5305LPBF's 120 mJ	Select when lower R_DS(on) dominates over avalanche ruggedness.
IXTP30P05T	V_DS = –50 V; R_DS(on) = 0.05 Ω; Q_g = 45 nC; TO-220AB package	Lower gate charge enables faster switching but reduced voltage margin (–50 V vs. –55 V)	Prefer for high-frequency (>100 kHz) SMPS where switching loss outweighs conduction loss.

Compared with STP55P06L-14 and IXTP30P05T, the IRF5305LPBF offers superior avalanche energy handling and wider V_DS margin at the cost of higher R_DS(on), making it optimal for ruggedized industrial motor drives and infrequent high-energy transient environments.

Availability

IRF5305LPBF is available at Aetrix Electronics and suitable for DC-DC power conversion, motor control H-bridges, and reverse polarity protection requiring stable component supply across long-lifecycle industrial programs.

Supply support for IRF5305LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line delivers high-reliability, high-current MOSFETs optimized for industrial motor drives, uninterruptible power supplies, and hard-switched DC-DC converters demanding robust SOA and avalanche performance.

FAQ

What is the maximum continuous drain current for IRF5305LPBF at 100°C case temperature?

The maximum continuous drain current is –20 A at T_C = 100°C, derated from –31 A at 25°C using the specified thermal resistance and SOA curve. This value is confirmed in Figure 4 of the official Infineon datasheet (document number IRF5305LPBF_DS) and reflects safe operation under sustained thermal stress without exceeding T_J = 175°C.

Does IRF5305LPBF require a gate resistor for basic switching applications?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on due to dv/dt coupling. The device's Q_g = 65 nC and input capacitance C_iss = 1500 pF make it susceptible to oscillation without controlled gate drive impedance, especially at switching frequencies above 20 kHz.

Can IRF5305LPBF be used in parallel configurations for higher current handling?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherent current sharing when paralleled. However, layout symmetry, matched gate drive paths, and individual source resistors (0.01–0.02 Ω) are required to ensure balanced dynamic current distribution and prevent thermal runaway.

Is the metal tab of IRF5305LPBF electrically connected to the drain terminal?

Yes, the exposed metal tab is internally bonded to the drain terminal and must be treated as a live high-voltage node. Electrical isolation from the heatsink is mandatory unless the circuit explicitly requires drain-to-chassis connection; creepage and clearance distances must comply with IEC 61000-4-5 for the target application's working voltage.

IRF5305LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF5305LPBF FAQ

1.How can I place an order for IRF5305LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5305LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5305LPBF reliable?

The price and inventory of IRF5305LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5305LPBF is usually 5 days.

3.What payment methods are accepted for IRF5305LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5305LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5305LPBF?

IRF5305LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5305LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5305LPBF?

For technical support, including IRF5305LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5305LPBF requirements.

6.How does Aetrix verify that IRF5305LPBF is sourced from the original manufacturer or authorized distributors?

All IRF5305LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5305LPBF meets industry standards.

7.What is the process for return or replacement of IRF5305LPBF?

All IRF5305LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5305LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5305LPBF part is unused and in its original packaging.

Return procedure for IRF5305LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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