Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5305SPBF

Name: IRF5305SPBF
Brand: Infineon Technologies
SKU: IRF5305SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF5305SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF5305SPBF.pdf

Description:: MOSFET P-CH 55V 31A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,277

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF5305SPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in TO-263 (D2PAK) package, rated for -55 V V_DS, -31 A I_D (T_C = 25°C), R_DS(on) ≤ 0.06 Ω at V_GS = -10 V, and 180 W P_D. It serves as a high-current power switch in DC-DC converters and motor control H-bridge topologies.

For engineers reviewing the IRF5305SPBF datasheet, IRF5305SPBF pinout, IRF5305SPBF application, or IRF5305SPBF equivalent, key selection criteria include its negative gate threshold (–2.0 to –4.0 V), low gate charge (Q_g = 65 nC), avalanche-rated ruggedness, and lead-free TO-263 surface-mount compatibility with industrial thermal management requirements.

Technical Context

This MOSFET operates in enhancement mode with a negative gate-source voltage threshold, requiring active pull-down for turn-on in high-side switching configurations. Its planar stripe cell structure supports repetitive avalanche energy rating (E_AS = 390 mJ), and the integrated body diode has t_rr = 120 ns and Q_rr = 120 nC.

The device uses copper-bonded die attach and solderable nickel-plated leads for enhanced thermal cycling reliability. Gate oxide thickness and doping profile are optimized for stable R_DS(on) over temperature (±30% drift from –55°C to 175°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–55 V: Maximum reverse drain-source blocking voltage before avalanche onset.
I_D (T_C = 25°C)	–31 A: Continuous DC current capability with heatsink at case temperature 25°C.
R_DS(on) @ V_GS = –10 V	≤ 0.06 Ω: On-resistance determines conduction loss in high-current switching paths.
Q_g	65 nC: Total gate charge dictates driver strength requirement and switching speed.
E_AS	390 mJ: Rated single-pulse avalanche energy enables robustness against inductive load transients.
t_rr (body diode)	120 ns: Reverse recovery time affects shoot-through risk and snubber design in bridge circuits.

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, isolated tab (drain-connected), 3-pin configuration with standard thermal pad footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives negative voltage relative to source to modulate channel conductivity.
2 (Drain)	High-side power node	Connected to load supply rail; electrically tied to exposed metal tab for thermal conduction.
3 (Source)	Reference return	Serves as common reference for gate drive and current sensing; ties to system ground or floating node.

Key Features

Feature	Design Value
Lead-free (Pb-free) construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile.
175°C maximum junction temperature	Enables operation in under-hood automotive and high-ambient industrial environments.
Fast body diode with soft recovery	Reduces EMI and voltage spikes during freewheeling in synchronous rectification.
100% UIS tested	Each unit validated for unclamped inductive switching stress per JEDEC JESD22-A120.

Applications

DC-DC Synchronous Buck Converter

H-Bridge Motor Driver

Use Scenario: High-efficiency 12 V to 3.3 V step-down conversion for FPGA core supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >92% efficiency at 20 A output by cutting forward voltage drop from 0.45 V to <0.05 V.

Use Scenario: Bidirectional 24 V brushed DC motor control in automated gate systems.

IC Role / Device Role / Timing Role: High-side switch in one leg of full H-bridge, paired with N-channel low-side devices.

Use Value: Enables true high-side switching without bootstrap complexity due to negative V_GS drive compatibility.

Industrial Power Supply OR-ing

Overvoltage Protection Circuit

Use Scenario: Redundant 48 V DC power feed combining two AC/DC supplies.

IC Role / Device Role / Timing Role: Active OR-ing FET controlling current path based on supply voltage ranking.

Use Value: Limits reverse current and thermal runaway risk during supply failure with <10 µs response.

Use Scenario: 24 V industrial PLC input protection against field-wiring faults.

IC Role / Device Role / Timing Role: Crowbar switch triggered by comparator detecting >30 V transient.

Use Value: Clamps fault energy within safe SOA limits using rated avalanche capability (390 mJ).

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55P06	V_DS = –60 V, R_DS(on) = 0.055 Ω @ –10 V, Q_g = 120 nC	Higher gate charge increases driver loss; better voltage margin for 48 V systems.	Prefer when higher V_DS margin outweighs switching loss penalty.
IXTP50P05T	V_DS = –50 V, R_DS(on) = 0.05 Ω @ –10 V, E_AS = 220 mJ	Lower avalanche rating; TO-220 package limits thermal performance at >20 A.	Select only for lower-current designs where TO-220 mounting simplifies assembly.

Compared with STP55P06 and IXTP50P05T, the IRF5305SPBF offers optimal balance of gate drive simplicity (moderate Q_g), proven avalanche ruggedness, and D2PAK thermal interface-making it preferred for 24–48 V industrial motor and power conversion designs requiring reliability under transient stress.

Availability

IRF5305SPBF is available at Aetrix Electronics and suitable for DC-DC converters, H-bridge motor drivers, OR-ing power supplies, and overvoltage protection circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF5305SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors.

The StrongIRFET™ product line delivers high-reliability discrete power MOSFETs engineered for harsh-environment switching in industrial motor drives, telecom power supplies, and renewable energy inverters.

FAQ

What is the maximum allowable gate-source voltage for IRF5305SPBF?

The absolute maximum V_GS is ±20 V. Operation beyond ±15 V risks irreversible gate oxide damage. For reliable turn-on, –10 V is recommended; –5 V yields partial enhancement with elevated R_DS(on) (≈0.12 Ω). Gate drive must avoid ringing exceeding this limit during fast switching transitions.

Can IRF5305SPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. Parallel operation requires matched layout (symmetrical trace length, shared thermal plane), individual gate resistors (≥10 Ω), and derating to 80% of total rated current to manage thermal gradients and ensure balanced conduction across devices.

Does IRF5305SPBF have a specified avalanche SOA curve?

No single-curve SOA is published, but the device is 100% tested to JEDEC JESD22-A120 for unclamped inductive switching. The rated E_AS = 390 mJ applies at T_J = 25°C with L = 0.5 mH, I_AR = –31 A, and V_DD = –55 V. Derating is required above 25°C junction temperature.

Is the drain tab electrically isolated in TO-263 package?

No-the drain is internally connected to the exposed metal tab. PCB layout must treat the tab as a high-voltage node and maintain creepage/clearance to adjacent traces. Thermal vias beneath the tab must not connect to signal or ground planes unless explicitly tied to drain potential.

IRF5305SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF5305SPBF FAQ

1.How can I place an order for IRF5305SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5305SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5305SPBF reliable?

The price and inventory of IRF5305SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5305SPBF is usually 5 days.

3.What payment methods are accepted for IRF5305SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5305SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5305SPBF?

IRF5305SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5305SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5305SPBF?

For technical support, including IRF5305SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5305SPBF requirements.

6.How does Aetrix verify that IRF5305SPBF is sourced from the original manufacturer or authorized distributors?

All IRF5305SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5305SPBF meets industry standards.

7.What is the process for return or replacement of IRF5305SPBF?

All IRF5305SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5305SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5305SPBF part is unused and in its original packaging.

Return procedure for IRF5305SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…