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Infineon Technologies IRF5305STRR

Part No.:
IRF5305STRR
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF5305STRR.pdf
Description:
MOSFET P-CH 55V 31A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,682

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Product details

Overview

IRF5305STRR from Infineon Technologies is a P-channel enhancement-mode MOSFET in TO-263 (D2PAK) package, rated for -55 V VDS, -31 A ID (TC = 25°C), RDS(on) = 0.06 Ω (VGS = -10 V), and 120 W PD. It serves as a high-current power switch in DC-DC converters, motor control H-bridges, and reverse-polarity protection circuits.

For engineers reviewing the IRF5305STRR datasheet, IRF5305STRR pinout, IRF5305STRR application, or IRF5305STRR equivalent, key selection criteria include gate threshold voltage (-2 to -4 V), safe operating area (SOA) at 100 µs pulse width, thermal resistance RθJC = 1.0 °C/W, and avalanche energy rating (EAS = 380 mJ).

Technical Context

This MOSFET uses planar stripe cell structure with optimized doping profile to achieve low on-resistance while maintaining robust short-circuit withstand capability. Its gate oxide thickness and threshold voltage distribution are tuned for stable turn-on behavior across -55°C to +175°C junction temperature range.

The device features integral body diode with reverse recovery time trr = 120 ns and Qrr = 120 nC, enabling synchronous rectification in buck converters without external Schottky diodes. SOA curves specify linear operation up to 25 V × 12 A for 10 ms pulses.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-55 V - Maximum drain-to-source blocking voltage in reverse polarity configurations
ID (TC = 25°C)-31 A - Continuous DC current capability with heatsink at case temperature 25°C
RDS(on) (VGS = -10 V)0.06 Ω - On-state resistance determining conduction loss in high-side switching
VGS(th)-2 to -4 V - Gate threshold voltage range defining minimum drive level for reliable turn-on
EAS380 mJ - Single-pulse avalanche energy rating supporting inductive load switching
RθJC1.0 °C/W - Junction-to-case thermal resistance enabling 120 W power dissipation with 120°C ΔT

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, isolated tab (drain-connected), 3-terminal configuration.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control inputReceives negative gate drive relative to source to enable channel conduction
2 (Drain)High-side power nodeConnected to PCB copper pour for heat dissipation and high-current return path
3 (Source)Reference nodeServes as common return for gate drive circuit and load current sensing

Key Features

FeatureDesign Value
100% avalanche testedGuarantees single-pulse energy handling up to 380 mJ without parameter shift
Fast body diodetrr = 120 ns enables use in 100 kHz synchronous rectifiers without snubbers
Low gate chargeQg = 65 nC reduces driver power requirement and switching loss at 50 kHz
Enhanced SOALinear derating from 31 A @ 25°C to 12 A @ 100°C supports motor stall conditions

Applications

DC-DC Buck ConverterH-Bridge Motor Driver

Use Scenario: 12 V input to 5 V/10 A output step-down converter in industrial PLC power supply.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode to reduce conduction loss by 45%.

Use Value: Achieves >92% efficiency at full load due to 0.06 Ω RDS(on) and fast body diode recovery.

Use Scenario: Bidirectional 24 V brushed DC motor control in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switch in complementary pair with N-channel counterpart for PWM-driven direction control.

Use Value: Withstands 31 A stall current and 380 mJ inductive kickback without failure.

Reverse Polarity ProtectionLoad Switch for 24 V Systems

Use Scenario: Input protection circuit for automotive infotainment head unit powered from vehicle battery.

IC Role / Device Role / Timing Role: P-channel high-side switch placed between battery and system rail to block reverse connection.

Use Value: Enables <10 mV forward drop at 15 A due to low RDS(on), minimizing voltage loss during normal operation.

Use Scenario: Controlled 24 V power delivery to industrial sensor module with remote enable signal.

IC Role / Device Role / Timing Role: High-side load switch activated by microcontroller GPIO through level-shifting circuit.

Use Value: Gate threshold of -2 to -4 V allows direct interface with 3.3 V logic via simple resistor divider.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP55PF06VDS = -60 V, RDS(on) = 0.055 Ω, Qg = 85 nCHigher voltage rating but slower switching due to higher gate chargePreferred where 60 V margin is required over 55 V, and switching frequency ≤20 kHz
IXTP50P055PVDS = -55 V, RDS(on) = 0.055 Ω, EAS = 220 mJLower avalanche energy but superior on-resistance for ultra-low-loss designsSelected when conduction loss dominates design and inductive transients are clamped externally

Compared with STP55PF06 and IXTP50P055P, the IRF5305STRR offers balanced trade-off between avalanche ruggedness (380 mJ), gate drive compatibility (-2 to -4 V VGS(th)), and thermal performance (1.0 °C/W RθJC), making it optimal for 10–100 kHz industrial power switches requiring field reliability.

Availability

IRF5305STRR is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, reverse polarity protection, and 24 V load switching requiring stable component supply across multi-year production cycles.

Supply support for IRF5305STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line delivers high-current, high-voltage discrete MOSFETs optimized for rugged industrial power conversion and motor control applications with extended temperature and avalanche performance.

FAQ

What is the maximum continuous drain current for IRF5305STRR at 100°C case temperature?

The maximum continuous drain current is -18 A at TC = 100°C, derated linearly from -31 A at 25°C per the Safe Operating Area graph in the official Infineon datasheet. This reflects thermal limitation of the TO-263 package under sustained high-power conditions without forced airflow.

Can IRF5305STRR be driven directly by a 3.3 V microcontroller GPIO?

No - its gate threshold voltage range is -2 to -4 V, requiring a negative gate-source bias for full enhancement. A level-shifting circuit or dedicated gate driver generating -10 V relative to source is necessary to achieve RDS(on) = 0.06 Ω and avoid linear-mode operation.

Does IRF5305STRR have an integrated ESD protection diode on the gate?

Yes - it includes built-in gate protection diodes rated for ±30 V HBM ESD per JEDEC JESD22-A114. These diodes clamp transient voltages during handling and board assembly but do not replace external gate resistors for dv/dt suppression in high-noise environments.

What is the typical reverse recovery charge (Qrr) of the body diode?

The typical reverse recovery charge is 120 nC at IF = -31 A, dIF/dt = -100 A/µs, and TJ = 25°C. This value enables efficient synchronous rectification in buck converters operating up to 100 kHz without additional snubber networks.

IRF5305STRR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRF5305STRR FAQ

1.How can I place an order for IRF5305STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5305STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5305STRR reliable?

The price and inventory of IRF5305STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5305STRR is usually 5 days.

3.What payment methods are accepted for IRF5305STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5305STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5305STRR?

IRF5305STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5305STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5305STRR?

For technical support, including IRF5305STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5305STRR requirements.

6.How does Aetrix verify that IRF5305STRR is sourced from the original manufacturer or authorized distributors?

All IRF5305STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5305STRR meets industry standards.

7.What is the process for return or replacement of IRF5305STRR?

All IRF5305STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF5305STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5305STRR part is unused and in its original packaging.

Return procedure for IRF5305STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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