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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5305STRRPBF

Name: IRF5305STRRPBF
Brand: Infineon Technologies
SKU: IRF5305STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5305STRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF5305STRRPBF.pdf

Description:: MOSFET P-CH 55V 31A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF5305STRRPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -55 V V_DS, -31 A I_D (T_C = 25°C), R_DS(on) ≤ 0.06 Ω at V_GS = -10 V, and features TO-263 (D²PAK) surface-mount package. It serves as a high-current power switch in DC-DC converters, motor control H-bridges, and reverse-polarity protection circuits.

For engineers reviewing the IRF5305STRRPBF datasheet, IRF5305STRRPBF pinout, IRF5305STRRPBF application, or IRF5305STRRPBF equivalent, key selection criteria include gate threshold voltage (-2 to -4 V), safe operating area (SOA) limits at 100 µs pulse width, thermal resistance R_θJC = 1.3°C/W, and lead-free RoHS-compliant construction.

Technical Context

This MOSFET operates with negative gate-to-source voltage control, requiring active pull-up for turn-off in high-side configurations. Its avalanche-rated design supports repetitive unclamped inductive switching up to E_AS = 380 mJ at T_J = 25°C, and its body diode exhibits t_rr = 140 ns with Q_rr = 190 nC under specified test conditions.

The device uses planar stripe silicon process with optimized cell pitch for low R_DS(on) × Q_g figure of merit (12.5 Ω·nC). Gate charge is Q_g = 71 nC at V_GS = -10 V, and total gate-to-drain charge Q_gd = 25 nC enables predictable switching transitions in synchronous rectification topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-55 V - Maximum drain-to-source blocking voltage in reverse polarity protection or high-side switch applications
I_D (T_C = 25°C)	-31 A - Continuous DC current capability with heatsink; derates to -19 A at T_C = 100°C
R_DS(on)	≤ 0.06 Ω @ V_GS = -10 V - Enables <1.9 W conduction loss at 31 A, critical for thermal management in compact layouts
V_GS(th)	-2 to -4 V - Ensures reliable turn-on with standard logic-level gate drivers (e.g., TC4420, MIC4423)
E_AS	380 mJ - Supports robust operation in inductive load switching without external snubbers
R_θJC	1.3°C/W - Allows direct calculation of junction temperature rise above case for thermal design validation

Pinout & Package

Package: TO-263 (D²PAK), surface-mount, single-die, isolated tab (drain-connected). Dimensions: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H), with 3-pin configuration and exposed drain pad for thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives negative voltage relative to source to modulate channel conductivity; requires <71 nC charge for full turn-on
2 (Drain)	High-side power node	Connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to system ground
3 (Source)	Reference node / return path	Serves as gate drive reference; carries full load current and defines local ground for gate driver supply

Key Features

Feature	Design Value
100% avalanche tested	Guarantees energy handling up to 380 mJ per pulse without degradation in motor drive flyback events
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life before reflow
Fast body diode recovery	t_rr = 140 ns enables use in synchronous buck converters without cross-conduction risk
Low gate charge	Q_g = 71 nC reduces driver power loss and allows higher PWM frequencies (>100 kHz) in SMPS designs

Applications

Reverse Polarity Protection

DC-DC Synchronous Rectifier

Use Scenario: Input protection circuit for 12–48 V industrial power supplies against accidental battery reversal.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as ideal diode replacement with near-zero forward voltage drop.

Use Value: Eliminates 0.7 V diode loss, improving efficiency by >3% at 20 A and reducing thermal stress on PCB layout.

Use Scenario: Secondary-side switch in isolated 48 V to 12 V telecom DC-DC converters.

IC Role / Device Role / Timing Role: Synchronously rectifying element replacing Schottky diode in forward converter topology.

Use Value: Reduces conduction loss from ~1.8 W (diode) to ~0.6 W (MOSFET), enabling higher power density and lower case temperature.

H-Bridge Motor Driver

Hot-Swap Controller

Use Scenario: Low-side switch in dual half-bridge configuration driving 24 V brushed DC motors up to 30 A peak.

IC Role / Device Role / Timing Role: Complementary P-channel switch paired with N-channel high-side devices for bidirectional control.

Use Value: Enables fast turn-off (t_f = 55 ns) and low shoot-through risk due to controlled V_GS(th) distribution.

Use Scenario: Inrush current limiter in redundant 28 V avionics power modules during board insertion.

IC Role / Device Role / Timing Role: Series pass element controlled by dedicated hot-swap IC (e.g., LTC4215) to limit dV/dt and peak current.

Use Value: Withstands 2× rated current for 10 ms per JEDEC JESD22-A114, ensuring survivability during plug-in transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	V_DS = -55 V, R_DS(on) = 0.055 Ω, but Q_g = 110 nC - higher drive requirement	Better conduction loss at low V_GS, but slower switching in high-frequency SMPS	Prefer when thermal margin is constrained and switching frequency < 50 kHz
STP36PF06	V_DS = -60 V, R_DS(on) = 0.05 Ω, but V_GS(th) = -2 to -4 V and SOA not avalanche-rated	Higher voltage rating suits 48 V systems, but lacks guaranteed unclamped inductive switching capability	Choose only if avalanche ruggedness is not required and gate drive strength exceeds 100 mA peak

Compared with IRF4905PBF and STP36PF06, the IRF5305STRRPBF offers optimal balance of low gate charge, verified avalanche performance, and tight V_GS(th) distribution-making it preferred for motor drives and hot-swap circuits where reliability under transient overload is critical.

Availability

IRF5305STRRPBF is available at Aetrix Electronics and suitable for reverse polarity protection, DC-DC synchronous rectification, and H-bridge motor control applications requiring stable component supply across industrial, automotive, and telecom production programs.

Supply support for IRF5305STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line delivers high-current, low-R_DS(on) MOSFETs optimized for efficiency-critical power conversion and motor control applications in harsh environments.

FAQ

What is the maximum pulsed drain current (I_DM) for IRF5305STRRPBF?

The absolute maximum pulsed drain current is -110 A, defined under T_C = 25°C with duty cycle ≤ 1% and pulse width ≤ 10 µs. This rating assumes ideal heat sinking and is validated per JEDEC JESD47; actual usable I_DM depends on PCB copper area, ambient temperature, and switching frequency.

Does IRF5305STRRPBF require a gate resistor for stability?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance interaction. Without it, overshoot exceeding -20 V V_GS may occur during fast switching, risking gate oxide damage-especially with high-speed drivers like UCC27531.

Can IRF5305STRRPBF be used in linear mode (as a pass transistor)?

Yes, but only within the Safe Operating Area (SOA) limits shown in the datasheet's Figure 8. At V_DS = -20 V and T_C = 25°C, maximum continuous linear-mode current is -12 A; operation beyond SOA boundaries risks thermal runaway due to positive temperature coefficient of R_DS(on).

Is the drain tab electrically isolated in TO-263 package?

No-the drain is internally connected to the exposed metal tab. Electrical isolation from the heatsink must be implemented using insulating thermal pads or ceramic washers. Failure to isolate may cause short circuits in high-side configurations where the tab is mounted to a grounded heatsink.

IRF5305STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF5305STRRPBF FAQ

1.How can I place an order for IRF5305STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5305STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5305STRRPBF reliable?

The price and inventory of IRF5305STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5305STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF5305STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5305STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5305STRRPBF?

IRF5305STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5305STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5305STRRPBF?

For technical support, including IRF5305STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5305STRRPBF requirements.

6.How does Aetrix verify that IRF5305STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF5305STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5305STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF5305STRRPBF?

All IRF5305STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5305STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5305STRRPBF part is unused and in its original packaging.

Return procedure for IRF5305STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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