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Infineon Technologies IRF530NL
- Part No.:
- IRF530NL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF530NL.pdf
- Description:
- MOSFET N-CH 100V 17A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:6,069
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Product details
Overview
IRF530NL from Infineon Technologies (formerly International Rectifier) is a through-hole N-channel enhancement-mode power MOSFET designed for high-current switching in DC-DC converters, motor drives, and power supplies. It delivers 100 V V(BR)DSS, 90 mΩ RDS(on) at VGS = 10 V and ID = 9.0 A, 17 A continuous drain current at TC = 25°C, and full avalanche rating up to 340 mJ single-pulse energy - enabling robust operation in inductive load switching.
For engineers reviewing the IRF530NL datasheet, IRF530NL pinout, IRF530NL application, or IRF530NL equivalent, key selection criteria include its TO-262 (I²PAK) package thermal performance (RθJC = 2.15 °C/W), gate charge profile (Qg = 37 nC), body diode recovery characteristics (trr = 93–140 ns), and compatibility with 10 V gate drive in industrial power stages.
Technical Context
This device employs advanced HEXFET® process technology to minimize conduction loss while maintaining fast switching (td(on) = 9.2 ns, tf = 25 ns) and ruggedness against voltage transients. Its fully avalanche-rated structure supports reliable operation under inductive turn-off stress without external snubbers.
The integrated body diode exhibits VSD = 1.3 V at IS = 9.0 A and TJ = 25°C, with reverse recovery charge Qrr = 320–480 nC and di/dt capability up to 410 A/µs - critical for synchronous rectification and H-bridge freewheeling paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 100 V - Withstands up to 100 V drain-source blocking voltage before breakdown, suitable for 48 V bus and 100 V input systems. |
| RDS(on) | 90 mΩ @ VGS = 10 V, ID = 9.0 A - Low conduction loss enables <1 W dissipation at 10 A, reducing heatsink requirements. |
| ID (TC = 25°C) | 17 A - Continuous drain current rating at case temperature 25°C, defining maximum steady-state power handling. |
| Qg | 37 nC - Total gate charge determines required gate driver current and switching loss in PWM applications. |
| trr | 93–140 ns - Reverse recovery time of internal body diode, directly impacting efficiency and EMI in hard-switched topologies. |
| EAS | 340 mJ - Single-pulse avalanche energy rating confirms safe operation during inductive switching faults without failure. |
| RθJC | 2.15 °C/W - Junction-to-case thermal resistance enables accurate junction temperature estimation using measured case temperature. |
Pinout & Package
IRF530NL uses the TO-262 (I²PAK) through-hole package - a low-profile variant of the D2Pak optimized for PCB-mounted high-current applications where height clearance is constrained. It features a metal tab connected to the drain for direct heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current-carrying terminal, electrically connected to package tab | Must be thermally and electrically connected to heatsink; carries full load current and defines primary heat path. |
| Source | Reference node for gate drive and current return path | Serves as common reference for gate control and current sensing; low-inductance layout critical for stability. |
| Gate | Control terminal for channel conduction | Requires clean, low-impedance 10 V drive; sensitive to noise due to high input impedance and 37 nC total charge. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 340 mJ single-pulse energy withstand - eliminates need for external clamping in inductive switching circuits. |
| Ultra-low RDS(on) | 90 mΩ at 10 V gate drive - reduces conduction losses by >30% vs. legacy 100 V MOSFETs in same package. |
| Fast switching speed | td(on) = 9.2 ns, tf = 25 ns - enables >200 kHz operation in SMPS with minimized switching loss. |
| High dv/dt immunity | 7.4 V/ns peak diode recovery dv/dt - suppresses false turn-on in high-noise bridge configurations. |
| Lead-free construction | RoHS-compliant Pb-free plating - meets global environmental compliance without derating or reliability impact. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 48 V to 12 V in telecom power modules with 15 A output. IC Role / Device Role / Timing Role: High-side synchronous switch operating at 250 kHz PWM frequency with 10 V gate drive. Use Value: 90 mΩ RDS(on) limits conduction loss to 2.0 W at 15 A, enabling natural convection cooling without forced airflow. | Use Scenario: H-bridge control of 24 V, 10 A brushed motors in industrial actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with body-diode freewheeling. Use Value: 140 ns max trr and 480 nC Qrr ensure minimal shoot-through risk and <500 ns dead-time requirement. |
| AC-DC PFC Stage | LED Constant-Current Driver |
Use Scenario: Boost switch in active PFC front-end for 1 kW server PSU with 380 V DC link. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter. Use Value: 100 V V(BR)DSS margin accommodates 380 V DC + 10% surge, while 37 nC Qg enables efficient 65 kHz operation. | Use Scenario: Primary-side switch in isolated flyback LED driver delivering 350 mA at 48 V output. IC Role / Device Role / Timing Role: Power switch controlling primary current with opto-coupled feedback loop. Use Value: Avalanche rating absorbs leakage inductance spikes, eliminating need for TVS clamp and reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF10 | 100 V V(BR)DSS, 90 mΩ RDS(on), but Qg = 45 nC and no published EAS rating | Lacks documented avalanche capability; requires external clamping in inductive loads | Select when gate drive strength permits higher Qg and avalanche stress is absent |
| IXTP12N10L | 100 V V(BR)DSS, 120 mΩ RDS(on), Qg = 22 nC, TO-220 package | Higher RDS(on) increases conduction loss; smaller package limits thermal mass and heatsinking area | Select when lower gate drive demand outweighs efficiency loss and thermal constraints allow |
Compared with STP16NF10 and IXTP12N10L, IRF530NL provides superior avalanche ruggedness and lower RDS(on) in a thermally optimized TO-262 package - making it preferred for unclamped inductive switching and high-reliability industrial power stages.
Availability
IRF530NL is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED drivers, and AC-DC power supplies requiring stable component supply across long-lifecycle industrial programs.
Supply support for IRF530NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF530NL belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in medium-voltage industrial power conversion systems.
FAQ
What is the maximum continuous drain current for IRF530NL at 100°C case temperature?
The IRF530NL supports 12 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-262 package and silicon die, requiring proper heatsinking to maintain junction temperature below 175°C under sustained load.
Does IRF530NL require a gate resistor for stable switching?
Yes - a gate resistor (typically 10–25 Ω) is recommended to dampen ringing caused by gate loop inductance interacting with 37 nC total gate charge. Without it, overshoot and oscillation can exceed ±20 V gate rating, risking device failure during fast transitions.
Can IRF530NL replace IRF530 in existing designs?
Yes - IRF530NL is a direct replacement for the legacy IRF530, sharing identical pinout, electrical specs, and TO-262 package. The "NL" suffix denotes lead-free construction and improved manufacturing consistency, with no functional or thermal trade-offs.
What is the typical body diode forward voltage at 9.0 A?
The body diode forward voltage is 1.3 V at TJ = 25°C and IS = 9.0 A with VGS = 0 V. This value increases with junction temperature and decreases slightly at lower currents, directly affecting freewheeling losses in half-bridge and synchronous rectifier configurations.
IRF530NL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 37 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 920 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 70W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF530NL FAQ
1.How can I place an order for IRF530NL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF530NL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF530NL reliable?
The price and inventory of IRF530NL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF530NL is usually 5 days.
3.What payment methods are accepted for IRF530NL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF530NL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF530NL?
IRF530NL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF530NL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF530NL?
For technical support, including IRF530NL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF530NL requirements.
6.How does Aetrix verify that IRF530NL is sourced from the original manufacturer or authorized distributors?
All IRF530NL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF530NL meets industry standards.
7.What is the process for return or replacement of IRF530NL?
All IRF530NL units undergo pre-shipment inspection (PSI). If there is an issue with IRF530NL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF530NL part is unused and in its original packaging.
Return procedure for IRF530NL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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