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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF530NSPBF

Name: IRF530NSPBF
Brand: Infineon Technologies
SKU: IRF530NSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF530NSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF530NSPBF.pdf

Description:: MOSFET N-CH 100V 17A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF530NSPbF from Infineon Technologies (formerly International Rectifier) is a 100V, 17A N-channel enhancement-mode power MOSFET in D2Pak (TO-263) surface-mount package, featuring 90mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and fully avalanche-rated operation. It serves as a high-efficiency switching element in DC-DC converters, motor drives, and power supplies where low conduction loss and robust transient handling are required.

For engineers reviewing the IRF530NSPbF datasheet, IRF530NSPbF pinout, IRF530NSPbF application, or IRF530NSPbF equivalent, key selection criteria include its 100V V_DS, 90mΩ on-resistance at 10V gate drive, 70W T_C=25°C power dissipation, D2Pak thermal performance (R_θJC = 2.15°C/W), and fast switching parameters (t_d(on) = 9.2ns, Q_g = 37nC).

Technical Context

This N-channel MOSFET employs advanced HEXFET® process technology to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching (UIS) capability. Its design integrates a low-inductance D2Pak package with optimized gate charge profile (Q_gd/Q_gs = ~1.53) for controlled dv/dt and reduced Miller effect during hard-switching.

The device exhibits a positive temperature coefficient for R_DS(on) (0.11V/°C breakdown voltage drift), enabling inherent current sharing in parallel configurations. Its body diode supports bidirectional current flow with 93–140ns reverse recovery time and 320–480nC Q_rr, making it suitable for synchronous rectification and freewheeling in non-isolated topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100V - Maximum blocking voltage before avalanche; defines use in ≤100V bus applications like 48V industrial supplies.
R_DS(on)	90mΩ @ V_GS=10V, I_D=9A - Conduction loss of 7.3W at 12A continuous drain current; enables high-efficiency power stages.
I_D (T_C=25°C)	17A - Continuous current rating under ideal heatsink conditions; derates linearly by 0.47W/°C above 25°C case temp.
Q_g	37nC - Total gate charge determines driver strength requirement; 12Ω gate resistor yields ~35ns turn-off delay.
t_r/t_f	22ns/25ns - Fast edge rates support >500kHz switching in hard-switched SMPS without excessive EMI penalties.
E_AS	340mJ - Single-pulse avalanche energy rating ensures survivability during inductive load switching transients.
R_θJC	2.15°C/W - Junction-to-case thermal resistance enables direct heatsinking; 70W power dissipation achievable with <15°C ΔT.

Pinout & Package

D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Standard pin assignment viewed from top (marking side): left-to-right = G–D–S.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10V logic-level drive; threshold voltage 2.0–4.0V enables compatibility with standard microcontroller GPIOs.
D	Drain (high-side switch node)	Connected to PCB copper pour for heat sinking; electrically tied to exposed metal tab-must be isolated from other potentials.
S	Source (return path)	Common reference for gate drive and load return; internal source inductance (L_S) impacts switching ringing and layout sensitivity.

Key Features

Feature	Design Value
Fully avalanche rated	Withstands 340mJ single-pulse avalanche energy without failure-eliminates need for external snubbers in inductive switching.
Ultra-low R_DS(on)	90mΩ at 10V drive reduces conduction losses by >30% vs. legacy 100V MOSFETs, improving efficiency in 12–48V systems.
D2Pak thermal performance	2.15°C/W R_θJC allows 70W dissipation with minimal heatsink-enables compact, high-power-density board designs.
Fast switching with low Q_gd	11nC Miller charge minimizes dv/dt-induced false turn-on; supports stable operation up to 1MHz in resonant converters.
Lead-free and RoHS compliant	Pb-free termination (SPbF suffix) meets IPC-J-STD-020 reflow profiles; compatible with standard SMT assembly processes.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: Step-down conversion from 48V bus to 12V/5V for industrial control modules.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 250kHz with 10V gate drive.

Use Value: 90mΩ R_DS(on) limits conduction loss to <1.3W at 12A, enabling >94% efficiency without forced air cooling.

Use Scenario: H-bridge driver for 24V, 10A brushed motors in automated gate actuators.

IC Role / Device Role / Timing Role: Low-side switching element with PWM duty cycle control and body-diode freewheeling.

Use Value: 140ns max t_rr and 480nC Q_rr minimize switching loss during commutation, reducing MOSFET heating at 20kHz PWM.

Uninterruptible Power Supply (UPS)

LED Constant-Current Driver

Use Scenario: Inverter stage converting 36V battery bank to 120VAC output via full-bridge topology.

IC Role / Device Role / Timing Role: Half-bridge leg switch subjected to repetitive unclamped inductive switching stress.

Use Value: 340mJ E_AS rating ensures reliable operation during battery sag or load dump events without derating.

Use Scenario: Primary-side switch in flyback LED driver delivering 350mA to 100W COB arrays.

IC Role / Device Role / Timing Role: Primary switch controlling energy transfer into transformer; operates at 65kHz with ZVS assist.

Use Value: 37nC Q_g enables efficient gate driving with low-cost 1A peak drivers, reducing BOM cost vs. higher-Q alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	1000V V_DS, 10A I_D, 1Ω R_DS(on), TO-220FP package	Higher voltage rating but 11× higher on-resistance; suited for HV flyback, not 48V buck.	Select only when >600V blocking is required; avoid for low-voltage, high-current use cases.
IXTP12N10P	100V V_DS, 12A I_D, 120mΩ R_DS(on), TO-220 package	Lower current rating and higher R_DS(on); lacks D2Pak thermal advantage and avalanche rating.	Acceptable for lower-power (<100W), through-hole designs where surface-mount thermal density is not critical.

Compared with STP10NK100ZFP and IXTP12N10P, IRF530NSPbF delivers superior power density and efficiency in ≤100V, ≥10A surface-mount applications due to its 90mΩ R_DS(on), D2Pak thermal interface, and 340mJ avalanche capability-making it optimal for space-constrained industrial power stages.

Availability

IRF530NSPbF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF530NSPbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in International Rectifier's pioneering HEXFET® technology.

The IRF530N series belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-reliability, high-efficiency switching in industrial power conversion, motor control, and backup power systems.

FAQ

Is IRF530NSPbF pin-compatible with IRF530NLPbF?

Yes-both share identical G–D–S terminal arrangement and electrical specifications. The IRF530NSPbF uses the surface-mount D2Pak (TO-263) package, while IRF530NLPbF uses the through-hole TO-262 (I²PAK) variant. Mechanical mounting differs, but PCB layout and circuit design remain functionally interchangeable when thermal and mechanical constraints permit.

What is the maximum recommended gate drive voltage?

The absolute maximum V_GS is ±20V, but the device is characterized and optimized for 10V drive. Driving above 12V provides negligible R_DS(on) improvement while increasing gate oxide stress and risk of overvoltage damage during transients. For robust operation, use 10V with tight regulation and local decoupling.

Does IRF530NSPbF require a gate resistor for stability?

Yes-a gate resistor (typically 10–22Ω) is required to dampen parasitic oscillation caused by gate-drain capacitance (C_rss) interacting with PCB trace inductance. Without it, ringing can exceed V_GS ratings and cause erratic switching or device failure, especially at high di/dt (>100A/µs) in motor drive applications.

Can IRF530NSPbF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient enables natural current sharing. However, matched gate drive routing, symmetrical PCB copper pours, and individual gate resistors are mandatory. Thermal coupling between devices must be minimized to prevent thermal runaway; derate total current by 20% versus sum of individual ratings.

IRF530NSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 920 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 70W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF530NSPBF FAQ

1.How can I place an order for IRF530NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF530NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF530NSPBF reliable?

The price and inventory of IRF530NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF530NSPBF is usually 5 days.

3.What payment methods are accepted for IRF530NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF530NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF530NSPBF?

IRF530NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF530NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF530NSPBF?

For technical support, including IRF530NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF530NSPBF requirements.

6.How does Aetrix verify that IRF530NSPBF is sourced from the original manufacturer or authorized distributors?

All IRF530NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF530NSPBF meets industry standards.

7.What is the process for return or replacement of IRF530NSPBF?

All IRF530NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF530NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF530NSPBF part is unused and in its original packaging.

Return procedure for IRF530NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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