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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF530NSTRRPBF

Name: IRF530NSTRRPBF
Brand: Infineon Technologies
SKU: IRF530NSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF530NSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF530NSTRRPBF.pdf

Description:: MOSFET N-CH 100V 17A D2PAK

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Product details

Overview

IRF530NSTRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK surface-mount package, rated for 100 V V_DS, 90 mΩ R_DS(on) at V_GS = 10 V and I_D = 9.0 A, with 17 A continuous drain current at T_C = 25°C. It features fully avalanche-rated ruggedness, fast switching (t_r = 22 ns, t_f = 25 ns), and integrated body diode with 93–140 ns reverse recovery time - used in DC-DC converters, motor drives, and power supply primary-side switching.

For engineers reviewing the IRF530NSTRRPBF datasheet, IRF530NSTRRPBF pinout, IRF530NSTRRPBF application, or IRF530NSTRRPBF equivalent, key selection criteria include its 100 V breakdown voltage, 90 mΩ on-resistance at 10 V gate drive, 70 W case-mounted power dissipation, thermal resistance of 2.15 °C/W (junction-to-case), and D2PAK package compatibility with high-current PCB layouts requiring low parasitic inductance and robust thermal transfer.

Technical Context

This MOSFET employs advanced planar HEXFET processing to minimize R_DS(on) per die area while maintaining high dv/dt immunity (7.4 V/ns) and 175°C maximum junction temperature. Its gate charge profile (Q_g = 37 nC, Q_gd = 11 nC) supports efficient hard-switching in 100 kHz–500 kHz SMPS topologies.

The device integrates a fast, low-V_SD (1.3 V @ 9.0 A) body diode with controlled reverse recovery (Q_rr = 320–480 nC), enabling reliable operation in synchronous rectification and freewheeling roles without external diode supplementation in medium-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin and withstands 80 V transient spikes in industrial DC supplies.
R_DS(on)	90 mΩ @ V_GS = 10 V, I_D = 9.0 A - enables ≤0.73 W conduction loss at 9 A, critical for thermally constrained surface-mount designs.
I_D (continuous)	17 A @ T_C = 25°C - delivers high current density in D2PAK footprint without through-hole mounting.
Q_g	37 nC - determines gate driver power requirement; compatible with standard 1-A peak drivers for ≤500 kHz switching.
t_r/t_f	22 ns / 25 ns - minimizes switching losses in hard-switched flyback and forward converters operating up to 300 kHz.
Z_thJC	2.15 °C/W - allows direct heatsinking to copper pour or external heatsink, supporting >50 W steady-state power in optimized layouts.
E_AS	340–93 mJ - provides single-pulse avalanche energy rating for inductive load interruption without failure under defined test conditions.

Pinout & Package

D2PAK (TO-263) surface-mount package: 3-pin, isolated heat slug (Drain-connected tab), 10.67 mm × 9.65 mm footprint, 4.83 mm height, designed for high-current PCB thermal management via exposed copper pad soldering.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires 10 V drive for full enhancement; gate leakage <100 nA at ±20 V ensures low standby current.
Pin 2 (D)	Drain	High-side switch node; electrically connected to metal tab - must be isolated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Power return path and gate reference; internal source inductance (L_S) impacts switching ringing and must be minimized in layout.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	90 mΩ enables <1 W conduction loss at 10 A, reducing thermal stress in compact 48 V input DC-DC modules.
Fully avalanche rated	Rated for repetitive and single-pulse avalanche events (E_AS = 340 mJ), eliminating need for snubbers in inductive switching circuits.
Fast body diode	Reverse recovery time 93–140 ns and Q_rr = 320–480 nC support efficient freewheeling in non-synchronous buck and flyback converters.
Lead-free & RoHS compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1); reflow-compatible up to 260°C peak.

Applications

DC-DC Converter Primary Switch

Brushed DC Motor Driver High-Side

Use Scenario: 48 V input, 12 V output synchronous buck converter delivering 15 A continuous load in telecom power shelf.

IC Role / Device Role / Timing Role: Main high-side switching element controlling power delivery during PWM on-time; operates at 250 kHz with 50% duty cycle.

Use Value: 90 mΩ R_DS(on) limits conduction loss to 1.35 W at 15 A, enabling >94% efficiency without forced air cooling.

Use Scenario: 24 V brushed DC motor control in automated gate actuator with bidirectional braking.

IC Role / Device Role / Timing Role: High-side switch enabling PWM-controlled forward drive and active freewheeling via body diode during off-time.

Use Value: 140 ns max t_rr and 1.3 V V_SD reduce braking energy loss by 35% versus discrete Schottky + MOSFET solutions.

AC-DC Adapter Flyback Switch

Industrial LED Driver Switch

Use Scenario: 100 W universal-input (90–264 VAC) flyback adapter powering PoE switches.

IC Role / Device Role / Timing Role: Primary-side switching transistor handling reflected 100 V spike plus 30 V margin; switched at 65 kHz.

Use Value: 100 V V_DS rating and 7.4 V/ns dv/dt immunity prevent false turn-on during transformer leakage spikes.

Use Scenario: Constant-current 36 V/1.5 A LED string driver for street lighting with analog dimming.

IC Role / Device Role / Timing Role: Low-frequency (1–10 kHz) PWM dimming switch in buck-derived topology; conducts 100% duty cycle during full brightness.

Use Value: 17 A continuous rating at 25°C case temperature supports 2× overcurrent headroom during cold-start inrush.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF10	100 V, 16 A, R_DS(on) = 100 mΩ, TO-220 package, higher R_DS(on), through-hole only	Lacks D2PAK thermal performance; unsuitable for high-density SMT layouts requiring >50 W dissipation	Select when board space permits through-hole mounting and lower cost outweighs thermal penalty.
IXTP12N10P	100 V, 12 A, R_DS(on) = 110 mΩ, TO-220FP package, lower ID rating, no avalanche rating	Not avalanche-rated; requires external clamping in inductive loads; limited to <30 W continuous use	Choose only for non-inductive, low-energy switching where avalanche robustness is not required.

Compared with STP16NF10 and IXTP12N10P, IRF530NSTRRPBF offers superior thermal resistance (2.15 °C/W vs. ≥3.5 °C/W), lower on-resistance, and guaranteed avalanche capability - making it the preferred choice for high-reliability, high-power-density SMT power stages.

Availability

IRF530NSTRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and AC-DC adapters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF530NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability switching in power conversion systems - emphasizing low R_DS(on), fast switching, and rugged avalanche performance in compact packages.

FAQ

What is the maximum gate-source voltage rating for IRF530NSTRRPBF?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement; gate drive circuits must clamp negative excursions below –20 V during switching transients to avoid reliability degradation.

Can IRF530NSTRRPBF be used in linear (analog) mode operation?

No - it is not characterized or rated for linear mode. The Safe Operating Area (SOA) curve shows severe derating above 10 V V_DS at DC, and thermal runaway risk increases rapidly due to positive temperature coefficient of R_DS(on). Use only in saturated switching applications.

Is the D2PAK tab electrically connected to the Drain terminal?

Yes - the exposed metal tab is internally connected to the Drain. When mounted on a heatsink, electrical isolation (e.g., mica washer + thermal paste) is mandatory unless the heatsink is referenced to the Drain potential. PCB layout must assign the tab pad to the Drain net and ensure adequate creepage clearance.

What is the typical gate threshold voltage range for IRF530NSTRRPBF?

V_GS(th) is specified from 2.0 V to 4.0 V at I_D = 250 µA. At room temperature, most units turn on between 2.8 V and 3.6 V. For reliable switching, gate drive must exceed 4.5 V to ensure full enhancement across temperature and process variation.

IRF530NSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 920 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 70W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF530NSTRRPBF FAQ

1.How can I place an order for IRF530NSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF530NSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF530NSTRRPBF reliable?

The price and inventory of IRF530NSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF530NSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF530NSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF530NSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF530NSTRRPBF?

IRF530NSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF530NSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF530NSTRRPBF?

For technical support, including IRF530NSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF530NSTRRPBF requirements.

6.How does Aetrix verify that IRF530NSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF530NSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF530NSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF530NSTRRPBF?

All IRF530NSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF530NSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF530NSTRRPBF part is unused and in its original packaging.

Return procedure for IRF530NSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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