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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF540NL

Name: IRF540NL
Brand: Infineon Technologies
SKU: IRF540NL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF540NL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF540NL.pdf

Description:: MOSFET N-CH 100V 33A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF540NL from International Rectifier is a through-hole N-channel enhancement-mode power MOSFET with 100V V_DS, 44 mΩ R_DS(on) at V_GS = 10V and 33A continuous drain current at T_C = 25°C. It features full avalanche rating, 175°C junction temperature capability, and fast switching (t_d(off) = 39 ns, Q_g = 71 nC), used in DC-DC converters, motor drives, and UPS inverters.

For engineers reviewing the IRF540NL datasheet, IRF540NL pinout, IRF540NL application, or IRF540NL equivalent, key selection criteria include its TO-262 (I²PAK) package thermal performance, body diode recovery characteristics (t_rr = 115–170 ns), and gate charge profile for hard-switched topologies requiring low conduction loss and robust unclamped inductive switching.

Technical Context

This MOSFET employs International Rectifier's Advanced HEXFET® process to achieve ultra-low on-resistance per die area while maintaining ruggedness against repetitive and single-pulse avalanche stress. Its gate threshold voltage (2.0–4.0 V) enables compatibility with 5V and 10V logic-level drive, and its dynamic dv/dt rating supports reliable operation in noisy high-speed switching environments.

The device integrates a fast, low-V_SD (1.2 V max at I_S = 16 A) body diode with controlled reverse recovery (Q_rr = 505–760 nC), making it suitable for freewheeling and synchronous rectification roles where diode conduction and turn-off behavior directly impact efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before breakdown; defines use in ≤100V bus systems like 48V telecom or 24V industrial supplies.
R_DS(on)	44 mΩ @ V_GS = 10V, I_D = 16A - Directly determines conduction loss (P_cond ≈ I² × 0.044 Ω); critical for thermal design in high-current loads.
I_D (T_C = 25°C)	33 A - Continuous drain current rating under ideal heatsinking; sets upper bound for steady-state load handling in TO-262 mount.
Q_g	71 nC - Total gate charge required for full turn-on; dictates driver strength needed and impacts switching loss in PWM applications.
t_rr	115–170 ns - Body diode reverse recovery time; influences voltage overshoot and switching loss during commutation in inductive circuits.
E_AS	700–185 mJ - Single-pulse avalanche energy rating; quantifies safe operating margin during unclamped inductive switching events.
T_J Range	−55°C to +175°C - Extended junction temperature range enables deployment in under-hood automotive or high-ambient industrial enclosures.

Pinout & Package

The IRF540NL uses the TO-262 (I²PAK) through-hole package - a low-profile variant of the D2Pak optimized for space-constrained PCB layouts while retaining high thermal and current-carrying capability via exposed drain tab soldering.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; must be isolated from chassis unless referenced to system ground; primary thermal path to heatsink.
Source	Reference node for gate drive and current return	Common return for load current and gate driver reference; ties to power ground plane; affects noise coupling in high-di/dt paths.
Gate	Control terminal for channel conduction	High-impedance input requiring low-inductance gate loop; sensitive to ringing; requires series resistor (e.g., 5.1 Ω) to dampen oscillation and control dV/dt.

Key Features

Feature	Design Value
Fully avalanche rated	Guarantees survivability under unclamped inductive switching up to E_AS = 700 mJ, eliminating need for external snubbers in relay/motor drive flyback paths.
Ultra-low R_DS(on)	44 mΩ enables <1.5 W conduction loss at 15 A DC, reducing heatsink size and improving power density in compact 48V battery systems.
Fast body diode	115 ns typical t_rr and 505 nC Q_rr minimize voltage spikes and cross-conduction risk in half-bridge freewheeling operation.
175°C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments without derating, extending reliability in industrial motor controls.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; Pb-free plating ensures compatibility with modern reflow and wave soldering processes.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: High-efficiency 48V-to-12V step-down converter delivering up to 20A output in telecom power shelf.

IC Role / Device Role / Timing Role: Synchronous high-side switch controlling duty cycle and power transfer; body diode conducts during low-side interval.

Use Value: 44 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 75 mΩ MOSFETs, enabling >94% peak efficiency at full load.

Use Scenario: H-bridge driver for 24V brushed motors in automated gate actuators with bidirectional stall protection.

IC Role / Device Role / Timing Role: Low-side switching element handling 30A peak stall current; avalanche rating absorbs back-EMF during sudden stop.

Use Value: 700 mJ E_AS withstands repeated 16A inductive turn-off events without degradation, eliminating need for external clamping diodes.

Uninterruptible Power Supply (UPS)

LED Constant-Current Driver

Use Scenario: Inverter stage converting 48V battery to 120VAC for small office UPS units with pure sine-wave output.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating at 20–50 kHz; body diode recovers during dead-time commutation.

Use Value: Controlled Q_rr (505–760 nC) and fast t_rr (115 ns) reduce switching losses and EMI generation during zero-voltage transitions.

Use Scenario: High-power LED string driver for outdoor signage using constant-current buck topology at 36V input.

IC Role / Device Role / Timing Role: Primary switching transistor regulating average current through sense resistor feedback loop.

Use Value: 175°C T_J(max) allows operation in thermally isolated aluminum housing without active cooling, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60V V_DS, 14 mΩ R_DS(on), TO-220 package, lower voltage rating	Limited to ≤60V systems; unsuitable for 100V bus designs but offers lower conduction loss in 24–48V LED drivers	Select when bus voltage ≤60V and R_DS(on) priority outweighs voltage headroom
IXTH30N10L	100V V_DS, 30 mΩ R_DS(on), TO-247 package, higher cost and larger footprint	Better thermal performance (R_θJC = 0.5°C/W) supports >40A continuous operation with forced air cooling	Select when higher current or improved thermal margin is required and board space permits TO-247 mounting

Compared with STP55NF06L and IXTH30N10L, the IRF540NL provides optimal balance of 100V rating, TO-262 form factor, and proven ruggedness for cost-sensitive industrial motor and power conversion designs where 33A continuous current suffices.

Availability

IRF540NL is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF540NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies since 2015) was a pioneer in power semiconductor innovation, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial and automotive markets.

The HEXFET® product line was engineered specifically for high-current, high-reliability power switching applications-emphasizing low R_DS(on), fast switching, and rugged avalanche performance in demanding real-world conditions.

FAQ

Is IRF540NL logic-level compatible?

No, IRF540NL is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but it requires ≥10 V V_GS to achieve specified R_DS(on) of 44 mΩ. Driving it with only 3.3 V or 5 V results in significantly higher on-resistance and excessive heating under load.

What is the recommended gate resistor value for IRF540NL in a 50 kHz PWM application?

A 5.1 Ω series gate resistor is recommended per the datasheet test condition for switching characterization. This value balances turn-on speed (minimizing t_d(on) and t_r) against gate drive current demand and ringing suppression, especially when paired with a 12 V gate driver.

Can IRF540NL replace IRF540N in existing designs?

Yes, IRF540NL is the TO-262 (I²PAK) package variant of the same silicon die as the TO-220 IRF540N. Electrical specifications are identical; only package dimensions, thermal resistance (R_θJC = 1.15°C/W vs. 1.0°C/W), and mounting method differ. PCB layout and heatsinking must be adapted accordingly.

Does IRF540NL require a heatsink in a 20A continuous application?

Yes. At 20A and 44 mΩ, conduction loss is ~17.6 W. With R_θJA ≈ 40°C/W (PCB mount), junction temperature rise would exceed 700°C without heatsinking. A minimum 10 cm² copper pour plus bolted heatsink (R_θSA ≤ 2.5°C/W) is required to maintain T_J ≤ 125°C at 25°C ambient.

IRF540NL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 44mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1960 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF540NL FAQ

1.How can I place an order for IRF540NL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540NL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540NL reliable?

The price and inventory of IRF540NL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540NL is usually 5 days.

3.What payment methods are accepted for IRF540NL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540NL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540NL?

IRF540NL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540NL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540NL?

For technical support, including IRF540NL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540NL requirements.

6.How does Aetrix verify that IRF540NL is sourced from the original manufacturer or authorized distributors?

All IRF540NL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540NL meets industry standards.

7.What is the process for return or replacement of IRF540NL?

All IRF540NL units undergo pre-shipment inspection (PSI). If there is an issue with IRF540NL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540NL part is unused and in its original packaging.

Return procedure for IRF540NL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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