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Infineon Technologies IRF540NLPBF
- Part No.:
- IRF540NLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF540NLPBF.pdf
- Description:
- MOSFET N-CH 100V 33A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:8,504
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Product details
Overview
IRF540NLPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 33A N-channel D2Pak surface-mount power MOSFET with 44mΩ RDS(on) at VGS = 10V, fully avalanche-rated, and rated for 175°C junction operation. It serves as a high-current switching element in DC-DC converters, motor drives, and UPS systems where low conduction loss and robust transient handling are required.
For engineers reviewing the IRF540NLPBF datasheet, IRF540NLPBF pinout, IRF540NLPBF application, or IRF540NLPBF equivalent, key selection criteria include its 100V VDS, 44mΩ on-resistance at 16A/10V, 71nC total gate charge, 115–170ns reverse recovery time, and D2Pak thermal performance (RθJC = 1.15°C/W).
Technical Context
This HEXFET® device uses advanced silicon processing to minimize RDS(on) per die area while maintaining fast switching (td(on) = 11ns, tf = 35ns) and ruggedness against repetitive avalanche stress (EAR = 13mJ). Its body diode exhibits VSD = 1.2V at 16A and trr = 115–170ns under defined di/dt conditions.
The D2Pak package enables high-power surface-mount operation with 130W power dissipation at TC = 25°C and linear derating of 0.87W/°C. Thermal resistance from junction-to-case is 1.15°C/W, supporting high-current designs without through-hole mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100V - Maximum blocking voltage before avalanche; suitable for 48V bus and 100V DC input stages. |
| RDS(on) | 44mΩ @ VGS = 10V, ID = 16A - Enables <1.1W conduction loss at 16A, critical for thermal management in compact layouts. |
| ID (TC = 25°C) | 33A continuous - Supports high-current load switching in industrial motor control and SMPS primary-side switches. |
| Qg | 71nC - Determines gate driver current requirement (~7.1mA avg. for 100kHz switching with 10V swing). |
| trr | 115–170ns - Limits diode recovery losses in synchronous rectification and hard-switched topologies. |
| EAS | 700–185mJ - Quantifies single-pulse avalanche energy handling; allows safe operation during inductive turn-off transients. |
| RθJC | 1.15°C/W - Enables direct heatsink mounting via backside tab; supports >100W dissipation with modest thermal interface. |
Pinout & Package
The IRF540NLPBF is housed in a D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The package features gull-wing leads and is lead-free (PbF) compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab / Pin 2 (Drain) | High-current output node | Electrically and thermally connected to internal drain; must be soldered to large copper pour or heatsink. |
| Pin 1 (Gate) | Control input | Receives 10V logic-level drive; 71nC total charge requires robust gate driver to minimize switching loss. |
| Pin 3 (Source) | Reference return path | Serves as common reference for gate drive and load current; internal source inductance affects switching waveform fidelity. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche-rated | Withstands 16A repetitive avalanche events (EAR = 13mJ), enabling reliable operation in inductive switching without snubbers. |
| Ultra-low RDS(on) | 44mΩ at 10V drive reduces conduction loss by >30% vs. legacy 100V MOSFETs, improving efficiency in 12–48V systems. |
| 175°C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs). |
| Fast body diode recovery | trr = 115–170ns with Qrr = 505–760nC enables use in quasi-resonant and synchronous rectifier topologies. |
| D2Pak thermal performance | RθJC = 1.15°C/W allows >100W power handling with minimal heatsink-ideal for space-constrained board-level power stages. |
Applications
| Motor Drive Inverter Stage | DC-DC Converter Primary Switch |
|---|---|
Use Scenario: Half-bridge switching in 24–48V BLDC motor controllers driving fans, pumps, or conveyors. IC Role / Device Role / Timing Role: High-side/low-side N-channel switch controlling phase current; operates at 20–50kHz with PWM duty cycling. Use Value: 44mΩ RDS(on) limits I²R loss to <1.1W at 16A, reducing heatsink size; avalanche rating absorbs motor back-EMF spikes. | Use Scenario: Primary-side switch in isolated 48V-to-12V flyback or forward converter for telecom or industrial power supplies. IC Role / Device Role / Timing Role: Main power switch turning on/off 48V input; handles peak currents up to 33A during startup or overload. Use Value: 100V VDS provides 2× safety margin over 48V rail; 71nC Qg enables efficient 100kHz+ operation with standard gate drivers. |
| Uninterruptible Power Supply (UPS) Output Stage | Industrial Solenoid/Actuator Driver |
Use Scenario: H-bridge output stage converting battery DC to 120/230VAC via SPWM in line-interactive UPS units. IC Role / Device Role / Timing Role: Bidirectional switching element in full-bridge topology; conducts 33A continuous during battery discharge mode. Use Value: 130W PD rating and 1.15°C/W RθJC support sustained high-current delivery; 175°C TJ ensures reliability during extended backup runtime. | Use Scenario: High-current pulse driver for 24V solenoids, hydraulic valves, or electromagnetic brakes in factory automation. IC Role / Device Role / Timing Role: Low-side switch energizing inductive loads; subjected to repeated 100ms pulses with 10A–30A peak current. Use Value: Fully rated for 110A pulsed drain current (IDM) and 700mJ single-pulse avalanche energy, eliminating need for external clamping diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP100N10F7 | 100V, 100A, RDS(on) = 9.5mΩ, TO-220 package, lower Qg (45nC) | Higher current rating but larger footprint; lacks D2Pak thermal interface | Prefer when board space allows TO-220 and higher peak current is needed; avoid if surface-mount assembly or thermal pad mounting is required. |
| IXTP120N10L2 | 100V, 120A, RDS(on) = 7.2mΩ, TO-220AB, logic-level gate (VGS(th) = 1.8–2.8V) | Lower gate threshold enables direct microcontroller drive; no D2Pak thermal path | Select when gate drive voltage is limited to 5V or 3.3V; not suitable for D2Pak-requiring PCB footprints or high-power density thermal designs. |
Compared with STP100N10F7 and IXTP120N10L2, the IRF540NLPBF trades higher RDS(on) for superior surface-mount thermal integration and proven ruggedness in high-reliability industrial switching-making it optimal where D2Pak mechanical fit and junction-to-case thermal path are design constraints.
Availability
IRF540NLPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF540NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® portfolio, a leader in high-voltage power MOSFETs since the 1980s.
The IRF540NLPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and energy infrastructure applications.
FAQ
Is IRF540NLPBF pin-compatible with IRF540NSPbF?
Yes. Both share identical D2Pak (TO-263) pinout: Gate (Pin 1), Drain (Tab/Pin 2), Source (Pin 3). The "L" suffix denotes lead-free D2Pak, while "S" indicates lead-free TO-262 (through-hole); they are not mechanically interchangeable due to package differences.
What is the maximum recommended gate drive voltage for IRF540NLPBF?
The absolute maximum VGS is ±20V, but the device is characterized and optimized for 10V drive. Driving above 12V yields diminishing RDS(on) improvement while increasing gate oxide stress and risk of ESD damage during handling or layout.
Does IRF540NLPBF require a gate resistor in typical switching applications?
Yes. A series gate resistor (typically 5–25Ω) is required to dampen ringing caused by gate-drain capacitance (Crss = 40pF) and parasitic inductance, especially at high dV/dt (7.0V/ns). Omitting it risks shoot-through, oscillation, and accelerated gate oxide degradation.
Can IRF540NLPBF replace IRF540N in existing designs?
Yes, with qualification. IRF540NLPBF is the lead-free, RoHS-compliant version of IRF540N, sharing identical electrical specs and D2Pak footprint. However, reflow profile must be updated to accommodate Pb-free solder (peak ~260°C), and thermal validation is recommended due to slight intermetallic differences.
IRF540NLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 44mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 71 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1960 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 130W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF540NLPBF FAQ
1.How can I place an order for IRF540NLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF540NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF540NLPBF reliable?
The price and inventory of IRF540NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540NLPBF is usually 5 days.
3.What payment methods are accepted for IRF540NLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540NLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF540NLPBF?
IRF540NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF540NLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF540NLPBF?
For technical support, including IRF540NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540NLPBF requirements.
6.How does Aetrix verify that IRF540NLPBF is sourced from the original manufacturer or authorized distributors?
All IRF540NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540NLPBF meets industry standards.
7.What is the process for return or replacement of IRF540NLPBF?
All IRF540NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF540NLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF540NLPBF part is unused and in its original packaging.
Return procedure for IRF540NLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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