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Infineon Technologies IRF540NSPBF
- Part No.:
- IRF540NSPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF540NSPBF.pdf
- Description:
- MOSFET N-CH 100V 33A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,481
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Product details
Overview
IRF540NSPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D2Pak (TO-263) surface-mount package, rated for 100V VDSS, 33A continuous drain current at 25°C, and 44mΩ RDS(on) at VGS = 10V. It features fully avalanche-rated operation, fast switching (tr = 35ns, tf = 35ns), and 175°C maximum junction temperature - deployed in DC-DC converters, motor drives, and uninterruptible power supplies.
For engineers reviewing the IRF540NSPBF datasheet, IRF540NSPBF pinout, IRF540NSPBF application, or IRF540NSPBF equivalent, key selection criteria include its 100V breakdown voltage, low on-resistance under 10V gate drive, thermal performance in PCB-mounted D2Pak, and body diode recovery characteristics (Qrr = 505–760nC, trr = 115–170ns) for hard-switched topologies.
Technical Context
This HEXFET® device uses advanced silicon processing to minimize RDS(on) per die area while maintaining ruggedness against repetitive avalanche stress (EAS = 700mJ). Its gate charge profile (Qg = 71nC, Qgd = 21nC) supports efficient high-frequency switching up to several hundred kHz in hard-switched SMPS designs.
The integrated body diode exhibits controlled reverse recovery (dV/dt rating of 7.0V/ns) and low forward voltage (VSD ≤ 1.2V at IS = 16A), enabling use in synchronous rectification and freewheeling paths without external diode supplementation in many medium-power applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - supports input rails up to 85V DC or 70V AC-derived bus voltages with margin. |
| RDS(on) | 44mΩ @ VGS = 10V - enables <1.5W conduction loss at 16A, critical for thermally constrained PCB layouts. |
| ID (25°C) | 33A continuous - delivers high current density in surface-mount form factor without through-hole mounting. |
| Qg | 71nC - determines gate driver power requirement and switching transition time in 100–500kHz converters. |
| tr/tf | 35ns/35ns - allows clean edge control and reduced EMI in hard-switched buck or half-bridge stages. |
| EAS | 700mJ single-pulse - sustains transient overvoltage events without failure during inductive load switching. |
| TJ(max) | 175°C - permits operation in sealed enclosures or high-ambient industrial environments with derated current. |
Pinout & Package
D2Pak (TO-263) surface-mount package with exposed drain pad for enhanced thermal dissipation; footprint compatible with IPC-7351B SO-2018 standard; requires thermal vias under drain pad for optimal PCB heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; accepts 10V logic-level drive; Miller charge (Qgd = 21nC) dominates turn-off timing. |
| Pin 2 (D) | Drain | Main power output node; electrically connected to exposed copper pad - primary thermal path to PCB. |
| Pin 3 (S) | Source | Power return/reference node; internal source inductance (LS) affects switching ringing and gate drive stability. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 44mΩ at 10V drive enables high-efficiency 12–48V DC-DC stages without active cooling. |
| Fully avalanche rated | 700mJ single-pulse energy rating eliminates need for external snubbers in inductive switching circuits. |
| Fast body diode | 115–170ns reverse recovery time supports synchronous rectification in non-isolated buck converters. |
| Lead-free construction | RoHS-compliant Pb-free plating and solderable terminations meet IPC-J-STD-020 moisture sensitivity level 3. |
Applications
| Motor Drive Inverter Stage | DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: Half-bridge switching in 24–48V BLDC motor controllers driving fans, pumps, or power tools. IC Role / Device Role / Timing Role: High-side and low-side N-channel switch; handles 33A peak phase current with <1.2V conduction drop. Use Value: Eliminates need for high-side P-channel or bootstrap gate drivers due to robust 10V-compatible threshold and low Qg. | Use Scenario: Primary switching FET in 12V-to-5V/3.3V point-of-load converter for FPGA or microcontroller power rails. IC Role / Device Role / Timing Role: Main power switch operating at 300kHz; body diode conducts freewheeling current during low-side conduction. Use Value: Low Qrr (505nC typ.) reduces switching losses and EMI compared to standard MOSFETs with slower diodes. |
| Uninterruptible Power Supply (UPS) Output Stage | Industrial LED Driver |
Use Scenario: Inverter bridge in line-interactive UPS delivering 500–1000VA output with battery backup. IC Role / Device Role / Timing Role: 100V-rated output switch handling 33A surge currents during battery-to-AC conversion. Use Value: Avalanche ruggedness (EAS = 700mJ) absorbs transformer leakage energy and load dump transients reliably. | Use Scenario: Constant-current switching element in 48V-input, multi-string LED driver for street lighting or signage. IC Role / Device Role / Timing Role: PWM-controlled current regulator; operates in linear region during dimming transitions. Use Value: 175°C TJ(max) and low RDS(on) allow sustained 20–25A pulsed operation without thermal shutdown in enclosed fixtures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP100N10F7 | 100V, 100A, 9.5mΩ, TO-220; higher current, lower RDS(on), but larger through-hole package. | Requires heatsink mounting and through-hole PCB layout; unsuitable for space-constrained SMT-only designs. | Select when board-level thermal mass supports TO-220 and peak current exceeds 33A. |
| IXTP120N10T | 100V, 120A, 7.5mΩ, TO-220; higher ID, lower RDS(on), no D2Pak variant available. | Lacks surface-mount option; incompatible with automated D2Pak reflow assembly lines. | Choose only if mechanical constraints permit through-hole mounting and thermal design accommodates higher power density. |
Compared with STP100N10F7 and IXTP120N10T, IRF540NSPBF trades absolute current and on-resistance for SMT manufacturability, thermal integration via PCB copper, and proven reliability in high-volume D2Pak applications - making it optimal where board space, assembly automation, and thermal coupling to PCB are prioritized over raw silicon capability.
Availability
IRF540NSPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply across long-lifecycle industrial programs.
Supply support for IRF540NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.
The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability power conversion - targeting switched-mode power supplies, motor control, and renewable energy inverters where ruggedness and thermal performance are critical.
FAQ
Is IRF540NSPBF logic-level compatible?
No - IRF540NSPBF has a gate threshold voltage range of 2.0–4.0V but requires ≥10V VGS to achieve its specified 44mΩ RDS(on). Driving it with 5V logic results in significantly higher on-resistance (>150mΩ), increased conduction loss, and potential thermal runaway under load.
What is the maximum PCB copper area needed for thermal management?
When mounted on a 1" square FR-4 PCB, IRF540NSPBF achieves RθJA = 40°C/W. To sustain 33A continuously at 25°C ambient, ≥25 cm² of 2-oz copper with ≥6 thermal vias under the drain pad is recommended to maintain TJ ≤ 125°C.
Can IRF540NSPBF replace IRF540NLPbF in the same footprint?
No - IRF540NSPBF uses D2Pak (TO-263) surface-mount packaging, while IRF540NLPbF uses TO-262 (straight-lead) through-hole packaging. Their footprints, soldering methods, and mechanical mounting are incompatible; redesign of PCB land pattern and assembly process is required.
Does IRF540NSPBF have a built-in ESD protection diode?
No - IRF540NSPBF lacks integrated gate protection circuitry. External Zener clamping (e.g., 15V TVS between gate and source) is strongly recommended in systems exposed to handling, connector hot-plug, or noisy gate drive environments to prevent gate oxide damage.
IRF540NSPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 44mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 71 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1960 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 130W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF540NSPBF FAQ
1.How can I place an order for IRF540NSPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF540NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF540NSPBF reliable?
The price and inventory of IRF540NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540NSPBF is usually 5 days.
3.What payment methods are accepted for IRF540NSPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540NSPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF540NSPBF?
IRF540NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF540NSPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF540NSPBF?
For technical support, including IRF540NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540NSPBF requirements.
6.How does Aetrix verify that IRF540NSPBF is sourced from the original manufacturer or authorized distributors?
All IRF540NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540NSPBF meets industry standards.
7.What is the process for return or replacement of IRF540NSPBF?
All IRF540NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF540NSPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF540NSPBF part is unused and in its original packaging.
Return procedure for IRF540NSPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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