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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF540Z

Name: IRF540Z
Brand: Infineon Technologies
SKU: IRF540Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF540Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF540Z.pdf

Description:: MOSFET N-CH 100V 36A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF540Z from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET designed for high-efficiency switching in DC-DC converters, motor drives, and power supplies. It delivers 36A continuous drain current at 25°C, 100V V_DSS, and 26.5mΩ R_DS(on), with a 175°C maximum junction temperature and rated repetitive avalanche capability up to T_jmax. Its fast switching (t_r = 51ns, t_f = 39ns) supports high-frequency operation in hard-switched topologies.

For engineers reviewing the IRF540Z datasheet, IRF540Z pinout, IRF540Z application, or IRF540Z equivalent, key selection criteria include its low conduction loss at 22A, robust body diode (V_SD = 1.3V, Q_rr = 41–62nC), thermal derating behavior (1.64°C/W R_θJC), and TO-220AB/TO-262/D²PAK package variants supporting industrial-grade heatsinking.

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per die area while maintaining high avalanche ruggedness. Its gate threshold voltage (2.0–4.0V) enables direct drive from 3.3V/5V logic with margin, and its 42nC total gate charge (Q_g) balances switching speed and driver loss.

The integrated body diode exhibits 33–50ns reverse recovery time (t_rr) and 41–62nC reverse recovery charge (Q_rr), making it suitable for synchronous rectification and freewheeling in non-isolated buck and half-bridge converters where diode conduction is brief but critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Withstands up to 100V drain-source blocking voltage before avalanche onset; suitable for 48V bus and 100V-class industrial input stages.
R_DS(on)	26.5mΩ max @ V_GS = 10V, T_J = 25°C - Enables <1W conduction loss at 22A, reducing heatsink requirements in 30–50W power stages.
I_D (continuous)	36A @ T_C = 25°C - Sustains full-rated current with adequate case cooling; derates to 25A at 100°C case temperature.
Q_g	63nC max - Determines gate driver power and rise/fall time control; compatible with standard 1A peak drivers at ≤500kHz switching.
E_AS	83mJ (tested) - Supports unclamped inductive switching events without failure, enabling robust operation in relay/snubberless designs.
T_J max	175°C - Allows extended operation under transient overload or poor thermal management without permanent degradation.
t_r/t_f	51ns / 39ns - Enables clean, low-loss transitions in hard-switched topologies up to ~300kHz with minimal overlap loss.

Pinout & Package

IRF540Z is offered in TO-220AB (IRF540ZPbF), TO-262 (IRF540ZSPbF), and D²PAK (IRF540ZLPbF) packages. All variants use the standard 3-pin configuration with Drain connected to the tab for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; must be isolated from heatsink unless circuit ground reference; primary thermal path to ambient.
Source	Reference node for gate drive and current return	Serves as common return for load current and gate drive loop; low-inductance layout critical for EMI and switching stability.
Gate	Control electrode for channel modulation	High-impedance input requiring controlled slew rate; sensitive to ringing-requires gate resistor (typically 10–47Ω) and local decoupling.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	26.5mΩ max enables >95% efficiency in 24–48V, 20A DC-DC stages with minimal thermal overhead.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_jmax, eliminating need for external snubbers in solenoid or relay drivers.
175°C junction rating	Extends usable lifetime under sustained thermal stress and allows operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood).
Fast body diode	33–50ns t_rr and 41–62nC Q_rr reduce switching loss during freewheeling, improving light-load efficiency in buck converters.
Lead-free packaging	RoHS-compliant Pb-free plating (PbF suffix) meets global environmental compliance without sacrificing solderability or thermal performance.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: Step-down regulation from 48V input to 12V/20A output in industrial PLC power modules.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 250kHz with gate-driven body diode commutation.

Use Value: 26.5mΩ R_DS(on) limits conduction loss to 10.6W at 20A, enabling compact heatsink design and >94% full-load efficiency.

Use Scenario: H-bridge driver for 24V, 15A brushed motors in automated gate actuators.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current with body diode freewheeling during PWM off-time.

Use Value: 1.3V V_SD and 41nC Q_rr minimize freewheeling loss and prevent shoot-through during direction reversal.

AC-DC Secondary-Side Rectifier

Uninterruptible Power Supply (UPS) Inverter Stage

Use Scenario: Synchronous rectification in 36V/10A LLC resonant converter secondary.

IC Role / Device Role / Timing Role: Controlled rectifier replacing Schottky diode, driven by transformer-coupled gate signal.

Use Value: 26.5mΩ on-resistance reduces forward drop by >0.5V vs. 40V Schottky, cutting rectifier loss by 60% at 10A.

Use Scenario: Half-bridge leg in 1kVA offline UPS inverter delivering 230VAC from 360VDC bus.

IC Role / Device Role / Timing Role: Hard-switched power switch with unclamped inductive turn-off into transformer leakage inductance.

Use Value: 83mJ tested E_AS withstands worst-case turn-off energy without clamping, simplifying gate drive and layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60V V_DSS, 14mΩ R_DS(on), 55A I_D, no rated avalanche energy	Limited to ≤60V systems; superior conduction loss but lower voltage margin and no avalanche spec	Select when bus voltage is ≤48V and avalanche robustness is not required; verify gate drive compatibility (V_GS(th) = 1–2.5V).
IRFZ44NPBF	55V V_DSS, 28mΩ R_DS(on), 49A I_D, 50mJ E_AS, TO-220 only	Lower voltage rating and reduced avalanche capability; higher R_DS(on) at same current	Acceptable for cost-sensitive 24V motor controls where 100V margin is unnecessary and thermal headroom exists.

Compared with STP55NF06L and IRFZ44NPBF, IRF540Z provides the highest voltage margin (100V), verified repetitive avalanche rating, and consistent R_DS(on) performance across TO-220/TO-262/D²PAK-making it preferred for industrial 48V+ systems demanding reliability over raw current density.

Availability

IRF540Z is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply and long-term industrial availability.

Supply support for IRF540Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The IRF540Z belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-reliability, high-current switching in industrial power conversion, motor control, and power supply applications where ruggedness and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRF540Z at 100°C case temperature?

The IRF540Z supports 25A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects linear derating from 36A at 25°C using the 1.64°C/W junction-to-case thermal resistance and 175°C maximum junction temperature limit.

Does IRF540Z have a fully rated body diode for synchronous rectification?

Yes-the integrated body diode is characterized with V_SD = 1.3V max at 22A and t_rr = 33–50ns, and is explicitly rated for repetitive conduction in the datasheet. However, it is not optimized for zero-voltage switching; external Schottky or GaN FETs may be preferred for ultra-high-frequency synchronous rectification.

Can IRF540Z be driven directly from a 3.3V microcontroller GPIO?

No-its gate threshold voltage range is 2.0–4.0V, but full enhancement requires ≥10V V_GS to achieve 26.5mΩ R_DS(on). A 3.3V drive yields high R_DS(on) (>1Ω) and excessive heating. A level-shifting gate driver (e.g., TC4427) or dedicated MOSFET driver IC is required for reliable switching.

What is the difference between IRF540ZPbF, IRF540ZSPbF, and IRF540ZLPbF?

These are identical silicon die in different packages: IRF540ZPbF is TO-220AB (through-hole), IRF540ZSPbF is TO-262 (surface-mount variant of TO-220), and IRF540ZLPbF is D²PAK (SO-8 style leaded surface-mount). All share identical electrical specs, thermal resistance (R_θJC = 1.64°C/W), and RoHS-compliant Pb-free plating.

IRF540Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF540Z FAQ

1.How can I place an order for IRF540Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540Z reliable?

The price and inventory of IRF540Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540Z is usually 5 days.

3.What payment methods are accepted for IRF540Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540Z?

IRF540Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540Z?

For technical support, including IRF540Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540Z requirements.

6.How does Aetrix verify that IRF540Z is sourced from the original manufacturer or authorized distributors?

All IRF540Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540Z meets industry standards.

7.What is the process for return or replacement of IRF540Z?

All IRF540Z units undergo pre-shipment inspection (PSI). If there is an issue with IRF540Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540Z part is unused and in its original packaging.

Return procedure for IRF540Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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