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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF540ZL

Name: IRF540ZL
Brand: Infineon Technologies
SKU: IRF540ZL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF540ZL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF540ZL.pdf

Description:: MOSFET N-CH 100V 36A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF540ZL from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in D²PAK (TO-263) package, rated for 100V V_DSS, 36A continuous drain current at T_C = 25°C, and 26.5mΩ R_DS(on) at V_GS = 10V. It features 175°C maximum junction temperature, fast switching (t_r = 51ns, t_f = 39ns), and tested repetitive avalanche capability up to T_jmax, making it suitable for DC-DC converters, motor drives, and uninterruptible power supplies.

For engineers reviewing the IRF540ZL datasheet, IRF540ZL pinout, IRF540ZL application, or IRF540ZL equivalent, key selection criteria include its low R_DS(on) at 10V gate drive, robust body diode (V_SD = 1.3V, Q_rr = 41–62nC), thermal resistance R_θJC = 1.64°C/W, and avalanche energy rating (E_AS = 83mJ, tested).

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction losses while maintaining high voltage blocking. Its gate charge profile (Q_g = 42–63nC, Q_gd = 15nC) supports efficient hard-switching in synchronous buck and half-bridge topologies with moderate gate drive strength.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3V) and controlled reverse recovery (t_rr = 33–50ns, Q_rr = 41–62nC), enabling reliable operation in freewheeling and bidirectional current paths without external diode supplementation in many medium-frequency (<100kHz) applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 48V bus and 100V industrial input systems.
R_DS(on)	26.5mΩ max @ V_GS = 10V - Directly determines I²R conduction loss; enables ≤2.8W dissipation at 36A DC, supporting thermally constrained PCB layouts.
I_D (cont)	36A @ T_C = 25°C - Continuous current rating under ideal heatsink conditions; derates to 25A at T_C = 100°C per linear derating factor.
Q_g	63nC max - Total gate charge required for full turn-on; sets minimum gate driver current (e.g., ≥5mA avg for 100ns switching) and influences switching loss.
E_AS	83mJ - Single-pulse avalanche energy rating (tested); allows safe operation during inductive load turn-off transients without snubber circuits.
T_J max	175°C - Maximum junction temperature; enables high ambient operation and extends reliability margin in sealed enclosures.
C_iss	1770pF - Input capacitance at V_DS = 25V; impacts gate drive loop stability and Miller effect during high dv/dt transitions.

Pinout & Package

IRF540ZL is housed in a surface-mount D²PAK (TO-263) package with exposed drain pad for enhanced thermal performance. The package measures 10.67 × 9.65 × 4.83 mm and requires solder paste stencil optimization for the thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires 2.0–4.0V threshold and 10V nominal drive for full R_DS(on) specification.
2 (D)	Drain	Main high-side current path; electrically connected to exposed copper pad for low-inductance, high-current routing and thermal sinking.
3 (S)	Source	Reference node for gate drive and current sensing; internal source inductance (L_S = 7.5nH) affects switching waveform ringing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	26.5mΩ at 10V drive reduces conduction loss by >30% vs. legacy TO-220 equivalents in same voltage class.
Repetitive avalanche rated	Tested E_AS = 83mJ and validated up to T_jmax enables unclamped inductive switching without derating or external protection.
Fast body diode	Q_rr = 41–62nC and t_rr = 33–50ns minimize reverse recovery loss and EMI in synchronous rectification.
175°C junction rating	Supports operation in high-ambient environments (e.g., automotive engine bays, industrial control cabinets) without thermal shutdown.

Applications

Motor Drive Inverter Stage

DC-DC Synchronous Buck Converter

Use Scenario: Half-bridge leg driving 24–48V brushed DC motors in industrial automation systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles bidirectional current during PWM commutation and regenerative braking.

Use Value: Low R_DS(on) minimizes I²R heating during 30A peak loads; fast body diode eliminates need for external Schottky in freewheeling path.

Use Scenario: Primary switch in 12V-to-3.3V/5V point-of-load converter for FPGA or microcontroller power rails.

IC Role / Device Role / Timing Role: High-efficiency main switch operating at 200–500kHz with synchronous rectification.

Use Value: 26.5mΩ R_DS(on) limits conduction loss to <1.5W at 25A; low Q_g enables use of low-cost gate drivers (e.g., TC4420).

Uninterruptible Power Supply (UPS) Output Stage

LED Driver Constant-Current Switch

Use Scenario: Inverter bridge converting 36–72V battery bank to 120/230VAC output in line-interactive UPS units.

IC Role / Device Role / Timing Role: Hard-switched power switch in full-bridge topology handling 1–2kVA loads with 50/60Hz fundamental and harmonic content.

Use Value: 100V V_DSS withstands reflected spikes from transformer leakage inductance; 175°C rating ensures reliability during extended overload events.

Use Scenario: High-current PWM dimming switch for 20–40V, 3A LED strings in architectural lighting fixtures.

IC Role / Device Role / Timing Role: Low-side constant-current switch modulated at 1–20kHz to control luminance without color shift.

Use Value: Robust avalanche rating absorbs inductive kickback from long LED string wiring; low R_DS(on) maintains <0.3V dropout at full current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60V V_DSS, 55A I_D, 14mΩ R_DS(on), TO-220 package	Limited to ≤60V systems; higher current but lower voltage rating than IRF540ZL	Select when 60V bus and higher current capacity are prioritized over 100V headroom and surface-mount assembly.
IXTP50N10P	100V V_DSS, 50A I_D, 22mΩ R_DS(on), TO-220 package	Higher current and lower R_DS(on), but no avalanche rating specified; larger footprint	Prefer for higher efficiency in through-hole designs where avalanche robustness is not required and thermal mass is available.

Compared with STP55NF06L and IXTP50N10P, IRF540ZL offers unique value in 100V surface-mount applications requiring guaranteed avalanche ruggedness and tight thermal management-making it optimal for space-constrained, high-reliability DC-DC and motor control modules.

Availability

IRF540ZL is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF540ZL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF540ZL belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control applications where thermal resilience and avalanche tolerance are critical.

FAQ

What is the maximum gate-source voltage rating for IRF540ZL?

The absolute maximum V_GS is ±20V. Operation beyond ±20V risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to +10V to +15V for turn-on and –5V to 0V for turn-off, avoiding prolonged exposure near the ±20V limit.

Does IRF540ZL require a gate resistor, and what value is recommended?

Yes-a gate resistor is essential to dampen ringing caused by L_S (7.5nH) and C_iss (1770pF). A 10–22Ω series resistor is recommended for 200–500kHz switching; lower values (≤10Ω) improve speed but increase EMI risk, while higher values (>47Ω) slow switching and raise losses.

Can IRF540ZL be used in parallel configurations?

Yes, but only with careful layout and gate drive design. Matched gate resistors (±5%), Kelvin source connections, and symmetrical PCB traces are mandatory. Thermal coupling must be uniform across devices to prevent current imbalance due to R_DS(on)'s positive temperature coefficient above 100°C.

Is the body diode in IRF540ZL suitable for synchronous rectification?

It is usable but not optimized for high-frequency synchronous rectification. With Q_rr = 41–62nC and t_rr = 33–50ns, it performs adequately below 200kHz. For >300kHz designs, a dedicated Schottky or GaN FET is preferred to minimize recovery loss and EMI.

IRF540ZL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF540ZL FAQ

1.How can I place an order for IRF540ZL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540ZL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540ZL reliable?

The price and inventory of IRF540ZL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540ZL is usually 5 days.

3.What payment methods are accepted for IRF540ZL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540ZL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540ZL?

IRF540ZL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540ZL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540ZL?

For technical support, including IRF540ZL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540ZL requirements.

6.How does Aetrix verify that IRF540ZL is sourced from the original manufacturer or authorized distributors?

All IRF540ZL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540ZL meets industry standards.

7.What is the process for return or replacement of IRF540ZL?

All IRF540ZL units undergo pre-shipment inspection (PSI). If there is an issue with IRF540ZL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540ZL part is unused and in its original packaging.

Return procedure for IRF540ZL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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