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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF540ZS

Name: IRF540ZS
Brand: Infineon Technologies
SKU: IRF540ZS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF540ZS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF540ZS.pdf

Description:: MOSFET N-CH 100V 36A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF540ZS from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 100V V_DSS, 26.5mΩ R_DS(on) at V_GS = 10V, and 36A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 51ns, t_f = 39ns), and tested repetitive avalanche capability up to T_jmax, making it suitable for DC-DC converters, motor drives, and uninterruptible power supplies.

For engineers reviewing the IRF540ZS datasheet, IRF540ZS pinout, IRF540ZS application, or IRF540ZS equivalent, key selection criteria include its low R_DS(on) at 10V gate drive, robust body diode (V_SD = 1.3V, t_rr = 33–50ns), thermal resistance (R_θJC = 1.64°C/W), and avalanche energy rating (E_AS = 83mJ).

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining high voltage blocking. Its gate charge profile (Q_g = 42–63nC, Q_gd = 15nC) supports efficient hard-switching in 50–100kHz power stages, and its C_iss/C_oss/C_rss values (1770pF / 180pF / 100pF at V_DS = 25V) enable predictable snubber design.

The integrated body diode exhibits low forward voltage (1.3V) and moderate reverse recovery (Q_rr = 41–62nC), supporting synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal performance is defined by a fixed junction-to-case path (1.64°C/W), requiring mechanical mounting with flat greased interface (R_θCS = 0.50°C/W) for full power operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Maximum drain-source blocking voltage before avalanche onset; sets upper limit for bus voltage in 48V industrial systems.
R_DS(on)	26.5mΩ max @ V_GS = 10V - Conduction loss of ≤0.34W at 36A; enables compact heatsinking in high-current switch-mode applications.
I_D (continuous)	36A @ T_C = 25°C - Sustained load current capability when case is actively cooled; derates to 25A at 100°C case temperature.
t_r/t_f	51ns/39ns - Fast edge rates reduce switching losses in PWM frequencies up to 200kHz; requires <12Ω gate resistor for optimal control.
E_AS	83mJ (tested) - Single-pulse unclamped inductive switching energy handling; validates robustness in relay driving and solenoid control.
T_J max	175°C - Enables operation in sealed enclosures or high-ambient environments without derating beyond thermal limits.
Q_g	63nC max - Total gate charge determines driver strength requirement; ~1.3mA average current needed for 100ns turn-on with 10V step.

Pinout & Package

IRF540ZS uses the standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration. Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature: 300°C for 10 seconds at 1.6mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Source	Power return and gate reference node	Common reference for gate drive; carries full load current and body diode conduction; layout must minimize L_S (7.5nH).
Gate	Control terminal for channel modulation	High-impedance input requiring low-inductance routing; sensitive to ringing due to Q_gd = 15nC Miller charge.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	26.5mΩ at 10V gate drive reduces I²R losses by >30% vs. legacy 100V MOSFETs in 20–30A power stages.
175°C junction rating	Enables full-rated operation in automotive under-hood or industrial motor-control environments without thermal throttling.
Tested repetitive avalanche	Validated E_AS = 83mJ and I_AR = 25A allow safe operation during inductive turn-off transients without external clamping.
Fast body diode	t_rr = 33ns and Q_rr = 41nC minimize reverse recovery loss and EMI in hard-commutated freewheeling paths.

Applications

Motor Drive Inverter

DC-DC Buck Converter

Use Scenario: Half-bridge leg in 24–48V BLDC motor controllers driving fans, pumps, or conveyors.

IC Role / Device Role / Timing Role: High-side or low-side switching element; conducts during PWM on-time and blocks during off-time; body diode handles freewheeling current.

Use Value: Low R_DS(on) minimizes conduction loss at 20–30A RMS; fast switching and low Q_gd reduce transition loss at 20kHz carrier frequency.

Use Scenario: Synchronous rectifier in 12V→3.3V/5V point-of-load converter for FPGA or microcontroller power rails.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode; turned on synchronously with high-side FET to reduce forward drop loss.

Use Value: 1.3V V_SD and 33ns t_rr cut body-diode conduction loss by >60% vs. discrete diode; R_DS(on) ensures <0.1V drop at 15A.

Uninterruptible Power Supply (UPS)

Industrial Relay/Solenoid Driver

Use Scenario: Output inverter stage in line-interactive UPS delivering 500–1000VA AC output from 48V battery bank.

IC Role / Device Role / Timing Role: Bridge arm switch; subjected to bidirectional current, voltage reversal, and inductive kickback during transfer switching.

Use Value: Tested 83mJ avalanche energy and 175°C rating ensure reliability during grid-fail transitions and short-circuit events.

Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC dampers, valve actuators, or lighting ballasts.

IC Role / Device Role / Timing Role: Single-ended switch connecting inductive load to 24–48V supply; absorbs stored energy via body diode or external clamp.

Use Value: Repetitive avalanche rating eliminates need for TVS/clamp diodes; 36A pulsed rating supports 10× inrush currents of large solenoids.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	R_DS(on) = 10.5mΩ lower (16mΩ), but V_DSS = 100V same; Q_g = 72nC higher; TO-220FP package (shorter leads, no isolated tab)	Higher efficiency at high current, but requires non-isolated heatsink mounting and larger gate driver capability	Select when thermal budget is tight and heatsink isolation is not required; verify PCB layout for higher Q_g.
IXTP120N10L2	R_DS(on) = 12.5mΩ (lower), V_DSS = 100V, but T_Jmax = 175°C same; avalanche rating not specified in datasheet	Better conduction loss, but lacks documented avalanche robustness for inductive switching	Prefer for resistive or lightly inductive loads where avalanche stress is minimal; avoid in relay/solenoid drivers without external protection.

Compared with STP100N10F7 and IXTP120N10L2, IRF540ZS trades slightly higher R_DS(on) for verified avalanche ruggedness and isolated-tab packaging-critical for designs requiring field-serviceable heatsink isolation or frequent inductive switching.

Availability

IRF540ZS is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, uninterruptible power supplies, and industrial relay drivers requiring stable component supply across multi-year production cycles.

Supply support for IRF540ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF540ZS belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motion control applications where thermal stability and transient ruggedness are critical.

FAQ

Is IRF540ZS pin-compatible with IRF540N?

Yes, IRF540ZS and IRF540N share identical TO-220AB pinout (Drain–Gate–Source), same footprint, and compatible gate threshold (2.0–4.0V). However, IRF540ZS has lower R_DS(on) (26.5mΩ vs. 44mΩ), higher ID (36A vs. 33A), and enhanced avalanche rating-making it a direct performance upgrade without layout change.

What is the maximum recommended gate resistor value for reliable switching?

A 12Ω gate resistor is specified in the datasheet test circuit for 50V V_DD, 22A I_D, and 10V V_GS. For 100kHz operation, use 10–15Ω to balance switching speed (t_r/t_f) and gate ringing suppression; values above 22Ω increase switching loss significantly without improving EMI.

Does IRF540ZS require a heatsink in continuous 25A operation?

Yes. At 25A and 26.5mΩ R_DS(on), conduction loss is 16.6W. With R_θJC = 1.64°C/W and ambient ≤50°C, a heatsink with R_θCA ≤ 2.0°C/W is required to hold T_J ≤ 150°C. Without forced airflow, a 30cm² aluminum finned heatsink is minimum recommended.

Can IRF540ZS be used in parallel configurations?

Yes, but only with matched devices and individual gate resistors (≥10Ω) to prevent current imbalance. The positive R_DS(on) temperature coefficient (Fig.10) provides inherent current sharing, but layout symmetry-especially source inductance (L_S = 7.5nH)-is critical to avoid oscillation or thermal runaway at high di/dt.

IRF540ZS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF540ZS FAQ

1.How can I place an order for IRF540ZS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540ZS reliable?

The price and inventory of IRF540ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540ZS is usually 5 days.

3.What payment methods are accepted for IRF540ZS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540ZS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540ZS?

IRF540ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540ZS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540ZS?

For technical support, including IRF540ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540ZS requirements.

6.How does Aetrix verify that IRF540ZS is sourced from the original manufacturer or authorized distributors?

All IRF540ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540ZS meets industry standards.

7.What is the process for return or replacement of IRF540ZS?

All IRF540ZS units undergo pre-shipment inspection (PSI). If there is an issue with IRF540ZS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540ZS part is unused and in its original packaging.

Return procedure for IRF540ZS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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