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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF540ZSPBF

Name: IRF540ZSPBF
Brand: Infineon Technologies
SKU: IRF540ZSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF540ZSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF540ZSPBF.pdf

Description:: MOSFET N-CH 100V 36A D2PAK

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Product details

Overview

IRF540ZSPBF from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 100V V_DSS, 26.5mΩ R_DS(on) at V_GS = 10V, and 36A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 51ns, t_f = 39ns), and enhanced repetitive avalanche capability up to T_jmax, making it suitable for DC-DC converters, motor drives, and uninterruptible power supplies.

For engineers reviewing the IRF540ZSPBF datasheet, IRF540ZSPBF pinout, IRF540ZSPBF application, or IRF540ZSPBF equivalent, key selection criteria include verified R_DS(on) at 10V gate drive, body diode reverse recovery charge (Q_rr = 41–62nC), thermal resistance (R_θJC = 1.64°C/W), and avalanche energy rating (E_AS = 83mJ tested).

Technical Context

This device employs Infineon's HEXFET® silicon process to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) across pulse widths down to 100µs. Its gate charge profile (Q_g = 42–63nC, Q_gd = 15nC) supports high-frequency switching in hard-switched topologies with controlled dv/dt.

The integrated body diode exhibits V_SD = 1.3V max at I_S = 22A and t_rr = 33–50ns, enabling synchronous rectification and freewheeling in buck and half-bridge configurations without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Withstands 100V drain-source blocking voltage before avalanche onset; suitable for 48V bus and 100V industrial input stages.
R_DS(on)	26.5mΩ max @ V_GS = 10V - Enables ≤0.95W conduction loss at 36A, reducing heatsink requirements in high-current DC loads.
I_D (continuous)	36A @ T_C = 25°C - Delivers full-rated current with case-mounted heatsinking; derates linearly above 25°C (1.64°C/W junction-to-case).
Q_g	63nC max - Determines gate driver current requirement (e.g., ≥5.3mA avg for 100kHz switching with 12Ω gate resistor).
E_AS	83mJ tested - Supports unclamped inductive switching events without failure, critical for relay driving and solenoid control.
T_J max	175°C - Allows operation in sealed enclosures or high-ambient environments where thermal margin is constrained.

Pinout & Package

IRF540ZSPBF uses a TO-220AB package with standard three-terminal layout: Drain connected to tab (electrically active), Source and Gate on insulated leads. Thermal path is optimized via metal tab mounting to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab; must be isolated from chassis unless referenced to system ground; primary heat dissipation surface.
Source	Reference node for gate drive and current return	Common connection point for load return and gate driver reference; defines V_GS measurement baseline.
Gate	Control electrode for channel modulation	High-impedance input requiring low-charge drive (Q_g = 63nC); sensitive to ESD; requires gate resistor for ringing suppression.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	26.5mΩ enables <1W conduction loss at 36A, reducing thermal design burden in space-constrained power stages.
175°C junction rating	Extends operational lifetime under sustained thermal stress and allows higher ambient temperature deployment without derating.
Fast switching (t_r/t_f)	51ns rise / 39ns fall times minimize switching losses in 100–500kHz SMPS designs when driven with adequate gate current.
Enhanced avalanche ruggedness	Tested E_AS = 83mJ ensures reliable operation during inductive turn-off transients without snubber circuits.
Low Q_gd/Q_g ratio	15nC Miller charge relative to 63nC total enables stable operation in high-dv/dt environments with reduced risk of false turn-on.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck

Use Scenario: Driving brushed DC motors in industrial automation systems with PWM frequencies up to 20kHz.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration; handles bidirectional current during regenerative braking via body diode conduction.

Use Value: 175°C rating permits continuous 36A operation in enclosed cabinets; low R_DS(on) reduces I²R heating during stall conditions.

Use Scenario: Main switch in 12V–48V input, 3.3V/20A output synchronous buck converter for telecom power modules.

IC Role / Device Role / Timing Role: Primary high-side FET; switched at 300kHz with gate driver delivering ≥1A peak current to meet Q_g demand.

Use Value: Verified Q_rr = 41–62nC minimizes shoot-through risk during dead-time transitions; low C_oss (180pF) reduces capacitive switching loss.

Uninterruptible Power Supply (UPS)

AC-DC PFC Stage

Use Scenario: Output inverter stage converting 360V DC bus to 230V AC in line-interactive UPS units.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology; conducts 36A RMS during overload conditions with 10ms surge capability.

Use Value: Repetitive avalanche rating allows safe handling of transformer leakage inductance spikes without clamping diodes.

Use Scenario: Boost switch in active PFC front-end for 1kW server PSUs operating at 65kHz.

IC Role / Device Role / Timing Role: Fast-switching boost transistor; body diode recovers within 50ns to support continuous conduction mode (CCM) operation.

Use Value: Low Crss (100pF) suppresses Miller-induced oscillation during high dv/dt transitions across 400V bus.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60V V_DSS, 14mΩ R_DS(on), TO-220 package	Limited to ≤60V systems; lower R_DS(on) improves efficiency below 48V but sacrifices 100V fault margin.	Select when bus voltage is strictly ≤48V and conduction loss dominates thermal budget.
IXTH30N10L	100V V_DSS, 30mΩ R_DS(on), TO-247 package	Higher R_DS(on) increases conduction loss; TO-247 offers superior thermal performance (R_θJC = 0.5°C/W) for >50A designs.	Prefer for higher-current, forced-air-cooled systems where package thermal resistance outweighs on-resistance penalty.

Compared with STP55NF06L and IXTH30N10L, IRF540ZSPBF uniquely balances 100V rating, 26.5mΩ on-resistance, and TO-220 thermal capability-making it optimal for cost-sensitive 48V–100V industrial power stages where board space and heatsink volume are constrained.

Availability

IRF540ZSPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF540ZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems-designed for robustness under repetitive avalanche, high-temperature operation, and fast switching demands.

FAQ

What is the maximum gate-source voltage rating for IRF540ZSPBF?

The absolute maximum V_GS is ±20V. Operation beyond ±20V risks permanent gate oxide damage. Recommended gate drive is +10V to +15V for full enhancement and -5V to -10V for fast turn-off; gate resistors should limit peak current to avoid overshoot exceeding this rating.

Does IRF540ZSPBF have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic N-channel body diode with V_SD = 1.3V max at I_S = 22A and reverse recovery time t_rr = 33–50ns. Q_rr is 41–62nC, enabling use in synchronous rectification and freewheeling without external diodes in medium-frequency applications.

Can IRF540ZSPBF be used in parallel configurations?

Yes, but requires matched gate resistors and symmetrical PCB layout to ensure current sharing. The positive temperature coefficient of R_DS(on) (normalized to 2.5× at 175°C) provides inherent thermal stability, though gate drive skew must be minimized to prevent dynamic imbalance during switching transitions.

What thermal interface material is recommended for mounting the TO-220AB tab?

A silicone-based thermal compound with 0.5–1.0 W/m·K conductivity and 0.05–0.1mm bond line thickness is recommended. Mounting torque must not exceed 10 lbf·in (1.1 N·m) to avoid package cracking; flat, greased heatsink surfaces yield R_θCS = 0.50°C/W as specified in the datasheet.

IRF540ZSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF540ZSPBF FAQ

1.How can I place an order for IRF540ZSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540ZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540ZSPBF reliable?

The price and inventory of IRF540ZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540ZSPBF is usually 5 days.

3.What payment methods are accepted for IRF540ZSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540ZSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540ZSPBF?

IRF540ZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540ZSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540ZSPBF?

For technical support, including IRF540ZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540ZSPBF requirements.

6.How does Aetrix verify that IRF540ZSPBF is sourced from the original manufacturer or authorized distributors?

All IRF540ZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540ZSPBF meets industry standards.

7.What is the process for return or replacement of IRF540ZSPBF?

All IRF540ZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF540ZSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540ZSPBF part is unused and in its original packaging.

Return procedure for IRF540ZSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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