Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF540ZSTRL

Name: IRF540ZSTRL
Brand: Infineon Technologies
SKU: IRF540ZSTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF540ZSTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF540ZSTRL.pdf

Description:: MOSFET N-CH 100V 36A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,841

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF540ZSTRL from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-263 (D²Pak) package, rated for 100V V_DSS, 26.5mΩ R_DS(on) at V_GS = 10V, and 36A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_d(on) = 15ns, t_f = 39ns), and enhanced repetitive avalanche capability up to T_jmax, making it suitable for DC-DC converters, motor drives, and uninterruptible power supplies.

For engineers reviewing the IRF540ZSTRL datasheet, IRF540ZSTRL pinout, IRF540ZSTRL application, or IRF540ZSTRL equivalent, key selection criteria include its low R_DS(on) at 10V gate drive, robust body diode (V_SD = 1.3V, Q_rr = 41–62nC), thermal performance (R_θJC = 1.64°C/W), and TO-263 surface-mount compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining ruggedness under transient stress. Its gate charge profile (Q_g = 42–63nC, Q_gd = 15nC) supports efficient high-frequency switching in hard-switched topologies, and its C_iss/C_oss/C_rss values (1770pF / 180pF / 100pF at V_DS = 25V) enable predictable turn-on/turn-off behavior with moderate gate resistance.

The integrated body diode exhibits controlled reverse recovery (t_rr = 33–50ns, Q_rr = 41–62nC) and low forward voltage (V_SD = 1.3V), supporting synchronous rectification and freewheeling in buck, half-bridge, and LLC resonant converters without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Maximum blocking voltage before avalanche; enables use in 48V bus and 100V DC-link applications.
R_DS(on)	26.5mΩ max @ V_GS = 10V - Low conduction loss at standard logic-level gate drive; reduces I²R heating in 20–30A load paths.
I_D (continuous)	36A @ T_C = 25°C - Sustains high DC current with adequate heatsinking; derates to 25A at T_C = 100°C.
Q_g	42–63nC - Total gate charge determines driver strength requirement; compatible with common gate drivers (e.g., IR2110, UCC27531).
t_f	39ns - Fast fall time minimizes switching loss during turn-off; critical for >100kHz PWM operation.
T_J max	175°C - High junction temperature rating allows operation in thermally constrained enclosures without forced air.
E_AS	83mJ (tested) - Confirmed single-pulse avalanche energy supports unclamped inductive switching in relay drivers and solenoid controls.

Pinout & Package

IRF540ZSTRL uses a TO-263 (D²Pak) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 10.67 × 9.65 × 4.83 mm and is optimized for high-current PCB copper pour attachment.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab connects directly to internal drain; must be soldered to large copper area for thermal management and low-inductance return path.
Source	Reference node for gate control and current return	Low-impedance source connection enables stable gate threshold referencing and minimizes common-source inductance in high-di/dt switching.
Gate	Control electrode for channel formation	High-impedance input requiring <200nA leakage; sensitive to ESD; requires gate resistor (typically 10–22Ω) to damp ringing and limit peak current.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	26.5mΩ max at 10V gate drive reduces conduction loss by >30% vs. legacy 100V MOSFETs in same package.
Repetitive avalanche rated	Rated for repeated unclamped inductive switching up to T_jmax; eliminates need for external snubbers in relay/solenoid drivers.
Fast body diode	Q_rr = 41–62nC and t_rr = 33–50ns enable clean commutation in synchronous rectifiers and half-bridge freewheeling.
175°C junction rating	Enables full-rated current operation in sealed industrial enclosures or automotive under-hood environments without derating.
TO-263 surface-mount	Compatible with automated reflow assembly; exposed drain pad supports >2W dissipation with 1-in² 2oz copper on FR-4.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: Step-down conversion from 48V battery to 12V/5V rail in telecom power systems.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 200kHz with 30A peak load current.

Use Value: Low R_DS(on) and fast switching reduce total power loss to <1.2W at full load, improving system efficiency to >94%.

Use Scenario: H-bridge control of 24V, 20A brushed motors in warehouse automation conveyors.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with PWM frequency up to 15kHz.

Use Value: Robust avalanche rating absorbs inductive kickback during direction reversal, eliminating external flyback diodes.

Uninterruptible Power Supply (UPS)

LED Constant-Current Driver

Use Scenario: Inverter stage converting 36V DC battery to 120V AC output in line-interactive UPS units.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating in 50Hz–60Hz square-wave or modified sine-wave mode.

Use Value: 175°C junction rating ensures reliability during extended backup runtime with passive cooling only.

Use Scenario: Constant-current regulation for high-brightness LED strings in street lighting fixtures.

IC Role / Device Role / Timing Role: Low-side current-sense switch modulated via analog dimming or PWM at 1–10kHz.

Use Value: Tight V_GS(th) tolerance (2.0–4.0V) and stable R_DS(on) over temperature ensure ±3% current accuracy across -40°C to +85°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540N	R_DS(on) = 44mΩ max (vs. 26.5mΩ); same TO-220 package; lower avalanche rating (E_AS = 54mJ)	Less suitable for high-current, high-frequency switching where conduction loss dominates	Prefer IRF540ZSTRL when board space permits TO-263 and efficiency >92% is required.
STP100N10F7	100V/100A, R_DS(on) = 9.5mΩ, but TO-220FP package; higher gate charge (Q_g = 95nC)	Better for ultra-low-loss designs but demands stronger gate driver and larger heatsink	Choose STP100N10F7 only if >50A peak current and <10mΩ R_DS(on) are mandatory; otherwise IRF540ZSTRL offers better cost/performance balance.

Compared with IRF540N and STP100N10F7, IRF540ZSTRL delivers optimal trade-off between low R_DS(on), manageable gate drive demand, surface-mount manufacturability, and proven avalanche ruggedness-making it ideal for mid-power industrial and embedded power stages where thermal headroom and layout simplicity matter.

Availability

IRF540ZSTRL is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply, long-term production continuity, and RoHS-compliant packaging.

Supply support for IRF540ZSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF540Z series belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and energy infrastructure applications.

FAQ

What is the maximum gate-to-source voltage rating for IRF540ZSTRL?

The absolute maximum V_GS is ±20V. Operation beyond ±20V risks permanent gate oxide damage. Recommended gate drive is 10V for full R_DS(on) specification, with 12–15V used in high-speed applications to reduce switching time-always using a series gate resistor to limit peak current and suppress oscillation.

Does IRF540ZSTRL have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic N-channel body diode with V_SD = 1.3V max at I_S = 22A and T_J = 25°C, t_rr = 33–50ns, and Q_rr = 41–62nC. This diode supports freewheeling and synchronous rectification without external components, but its recovery characteristics require careful layout to avoid shoot-through in bridge configurations.

Can IRF540ZSTRL be used in linear (analog) mode for adjustable current limiting?

No-it is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) curve shows limited DC capability (e.g., 10A at 50V), and prolonged operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on). Use dedicated current-limiting ICs or discrete solutions with SOA-validated MOSFETs for analog regulation.

Is IRF540ZSTRL lead-free and RoHS compliant?

Yes, IRF540ZSTRL is lead-free and RoHS compliant per EU Directive 2011/65/EU and Infineon's Material Declaration (PD-95531A). It uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30°C/60% RH.

IRF540ZSTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF540ZSTRL FAQ

1.How can I place an order for IRF540ZSTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540ZSTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540ZSTRL reliable?

The price and inventory of IRF540ZSTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540ZSTRL is usually 5 days.

3.What payment methods are accepted for IRF540ZSTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540ZSTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540ZSTRL?

IRF540ZSTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540ZSTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540ZSTRL?

For technical support, including IRF540ZSTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540ZSTRL requirements.

6.How does Aetrix verify that IRF540ZSTRL is sourced from the original manufacturer or authorized distributors?

All IRF540ZSTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540ZSTRL meets industry standards.

7.What is the process for return or replacement of IRF540ZSTRL?

All IRF540ZSTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF540ZSTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540ZSTRL part is unused and in its original packaging.

Return procedure for IRF540ZSTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…