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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF540ZSTRLPBF

Name: IRF540ZSTRLPBF
Brand: Infineon Technologies
SKU: IRF540ZSTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF540ZSTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF540ZSTRLPBF.pdf

Description:: MOSFET N-CH 100V 36A D2PAK

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Product details

Overview

IRF540ZSTRLPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-263 (D²Pak) package, rated for 100V V_DSS, 26.5mΩ R_DS(on) at V_GS = 10V, and 36A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 51ns, t_f = 39ns), and enhanced repetitive avalanche capability up to T_jmax. It is used in DC-DC converters, motor drives, and power supply primary-side switching.

For engineers reviewing the IRF540ZSTRLPBF datasheet, IRF540ZSTRLPBF pinout, IRF540ZSTRLPBF application, or IRF540ZSTRLPBF equivalent, key selection criteria include verified R_DS(on) at 10V drive, body diode recovery performance (t_rr = 33–50ns, Q_rr = 41–62nC), thermal resistance (R_θJC = 1.64°C/W), and avalanche energy rating (E_AS = 83mJ tested).

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per unit area while maintaining robust safe operating area (SOA) across pulse widths from 10µs to 10ms. Its gate charge profile (Q_g = 42–63nC, Q_gd = 15nC) supports efficient high-frequency hard-switching in buck and flyback topologies.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3V at I_S = 22A) and controlled reverse recovery (Q_rr = 41–62nC), enabling reliable synchronous rectification and freewheeling in inductive loads without external snubbing in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Maximum blocking voltage before avalanche; defines usable input range in 48V and 80V bus systems.
R_DS(on)	26.5mΩ max @ V_GS = 10V - Directly determines conduction loss (P_cond ≈ I_D² × R_DS(on)) at full load.
I_D (T_C = 25°C)	36A - Continuous current capability with heatsink; derates to 25A at T_C = 100°C.
t_r/t_f	51ns/39ns - Fast edge rates reduce switching transition time, lowering dynamic losses in 100–500kHz designs.
E_AS	83mJ (tested) - Confirmed single-pulse unclamped inductive avalanche energy; enables robustness against load dump or inductive kick.
Q_g	63nC max - Total gate charge dictates driver strength requirement; 12Ω gate resistor yields ~100ns turn-on delay in typical layouts.
T_J max	175°C - Enables operation in high-ambient industrial environments with margin for transient thermal stress.

Pinout & Package

IRF540ZSTRLPBF is housed in a surface-mount TO-263 (D²Pak) package with three terminals: Drain (tab), Source (pins 2 & 3), and Gate (pin 1). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside	Must be soldered to large copper pour for thermal and electrical integrity; contributes <4.5nH internal inductance.
Source (Pins 2 & 3)	Reference node for gate drive and current return path	Dual-pin layout reduces source inductance (L_S = 7.5nH); critical for minimizing gate oscillation during fast switching.
Gate (Pin 1)	Control electrode for channel formation	High-impedance input requiring clean, low-inductance routing; threshold voltage 2.0–4.0V ensures TTL/CMOS compatibility.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	26.5mΩ @ 10V enables <1W conduction loss at 20A, reducing heatsink size in 100W+ SMPS.
Repetitive avalanche rated	Validated up to T_jmax = 175°C per AN-1005; eliminates need for external clamping in motor control H-bridge shoot-through protection.
Fast body diode recovery	t_rr = 33–50ns and Q_rr = 41–62nC allow use in synchronous rectification without cross-conduction risk at ≤300kHz.
Thermal robustness	R_θJC = 1.64°C/W enables >50W dissipation with 30°C/W heatsink, supporting high-power density board layouts.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Primary-side high-side switch in 48V-input, 12V-output 100W buck converter operating at 250kHz.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; duty cycle modulated by PWM controller.

Use Value: Low R_DS(on) minimizes conduction loss; fast t_r/t_f and low Q_gd reduce switching loss and EMI generation.

Use Scenario: High-side switch in H-bridge driving 24V/15A brushed DC motor in industrial actuator.

IC Role / Device Role / Timing Role: One quadrant of bidirectional current control; conducts during forward drive and blocks reverse EMF during braking.

Use Value: Repetitive avalanche rating absorbs inductive kick during PWM off-time; body diode handles freewheeling current without external diode.

AC-DC Flyback Primary Switch

LED Driver Power Stage

Use Scenario: Primary switch in universal-input (85–265VAC), 30W isolated flyback powering smart lighting.

IC Role / Device Role / Timing Role: Energy storage switch; turns on to store energy in transformer, turns off to transfer to secondary.

Use Value: 100V V_DSS provides margin over reflected output voltage + leakage spike; E_AS = 83mJ withstands worst-case leakage energy.

Use Scenario: Constant-current switch in 36V-input, 2A LED string driver with analog dimming.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator; dissipates variable power based on dimming level.

Use Value: 175°C T_Jmax and low R_DS(on) enable stable operation under sustained partial-load thermal stress without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	R_DS(on) = 10.5mΩ @ 10V (lower), but V_DSS = 100V same; Q_g = 72nC (higher); SOA narrower at high V_DS.	Better conduction efficiency at high current; less suitable for high-voltage avalanche-prone circuits.	Prefer when conduction loss dominates and avalanche stress is minimal.
IXTP120N10L2	R_DS(on) = 12.5mΩ @ 10V; includes logic-level gate (V_GS(th) = 1–2.5V); no published E_AS rating.	Enables direct microcontroller drive; lacks validated avalanche capability for inductive switching.	Choose for low-voltage gate drive simplicity where avalanche immunity is not required.

Compared with STP100N10F7 and IXTP120N10L2, IRF540ZSTRLPBF trades slightly higher R_DS(on) for proven repetitive avalanche performance and tighter Q_gd/Q_g ratio-critical for ruggedized industrial motor and power supply designs.

Availability

IRF540ZSTRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and LED drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF540ZSTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF540Z series belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control applications.

FAQ

Is IRF540ZSTRLPBF RoHS-compliant and lead-free?

Yes. IRF540ZSTRLPBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU, with Pb-free plating on all terminations and halogen-free molding compound. The "PbF" suffix in the part number explicitly denotes lead-free construction per Infineon's standard marking convention.

What is the recommended gate resistor value for 200kHz switching?

A 10Ω to 15Ω non-inductive gate resistor is recommended for 200kHz operation with IRF540ZSTRLPBF. This balances switching speed (t_r/t_f ≈ 50ns) against gate ringing and driver dissipation, assuming a 1A peak gate driver and 12V gate drive swing per Infineon's application note AN-1001.

Can IRF540ZSTRLPBF replace IRF540N in existing designs?

No direct drop-in replacement. IRF540ZSTRLPBF has lower R_DS(on) (26.5mΩ vs. 44mΩ), faster switching, and improved avalanche rating-but identical pinout and voltage rating. Layout and gate drive may require verification due to higher dV/dt and di/dt sensitivity.

Does the body diode support continuous conduction mode (CCM) in synchronous rectification?

Yes. The body diode is rated for continuous source current up to 36A (I_S) and pulsed current up to 140A (I_SM). Its V_SD ≤ 1.3V at 22A and t_rr ≤ 50ns make it suitable for CCM synchronous rectification in 100–300kHz flyback and LLC converters when properly thermally managed.

IRF540ZSTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IRF540ZSTRLPBF FAQ

1.How can I place an order for IRF540ZSTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540ZSTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540ZSTRLPBF reliable?

The price and inventory of IRF540ZSTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540ZSTRLPBF is usually 5 days.

3.What payment methods are accepted for IRF540ZSTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540ZSTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540ZSTRLPBF?

IRF540ZSTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540ZSTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540ZSTRLPBF?

For technical support, including IRF540ZSTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540ZSTRLPBF requirements.

6.How does Aetrix verify that IRF540ZSTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF540ZSTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540ZSTRLPBF meets industry standards.

7.What is the process for return or replacement of IRF540ZSTRLPBF?

All IRF540ZSTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF540ZSTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540ZSTRLPBF part is unused and in its original packaging.

Return procedure for IRF540ZSTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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