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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF540ZSTRR

Name: IRF540ZSTRR
Brand: Infineon Technologies
SKU: IRF540ZSTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF540ZSTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF540ZSTRR.pdf

Description:: MOSFET N-CH 100V 36A D2PAK

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Product details

Overview

IRF540ZSTRR from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET rated for 100 V V_DSS, 36 A continuous drain current at T_C = 25°C, and 26.5 mΩ R_DS(on) at V_GS = 10 V. It features a 175°C maximum junction temperature, fast switching (t_r = 51 ns, t_f = 39 ns), and tested repetitive avalanche capability up to T_jmax. It is used as a primary switching element in DC-DC converters, motor drives, and uninterruptible power supplies.

For engineers reviewing the IRF540ZSTRR datasheet, IRF540ZSTRR pinout, IRF540ZSTRR application, or IRF540ZSTRR equivalent, key selection criteria include verified R_DS(on) at 10 V gate drive, body diode reverse recovery charge (Q_rr = 41–62 nC), thermal resistance (R_θJC = 1.64 °C/W), and TO-262 (I²PAK) package compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining robust avalanche performance. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable turn-on with standard logic-level drivers, and its low output capacitance (C_oss = 180 pF at V_DS = 25 V) supports high-frequency switching up to several hundred kHz.

The integrated body diode exhibits V_SD = 1.3 V at I_S = 22 A and t_rr = 33–50 ns, enabling synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal design is supported by validated transient impedance curves and a linear derating factor of 0.61 W/°C above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in 48 V and 96 V systems.
R_DS(on)	26.5 mΩ max @ V_GS = 10 V - Directly determines I²R conduction loss at full load; enables ≤1.5 W dissipation at 36 A.
I_D (continuous)	36 A @ T_C = 25°C - Confirmed silicon-limited current rating; requires heatsinking to sustain at elevated ambient.
Q_g	63 nC max - Total gate charge defining driver strength requirement; impacts switching loss and gate resistor selection.
E_AS (tested)	83 mJ - Verified single-pulse avalanche energy; allows safe operation during inductive turn-off transients without snubbers.
t_r/t_f	51 ns / 39 ns - Rise/fall times measured at V_DD = 50 V, I_D = 22 A, R_G = 12 Ω; sets practical PWM frequency ceiling.
T_J max	175°C - Maximum junction temperature; enables operation in sealed enclosures or high-ambient industrial environments.

Pinout & Package

IRF540ZSTRR is housed in a TO-262 (I²PAK) surface-mount package with isolated tab, optimized for high-current thermal transfer via backside copper pad. The package has three leads: Drain (tab and lead 2), Source (lead 1), Gate (lead 3).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Lead 2)	Main current-carrying terminal, connected to bulk silicon substrate	Electrically tied to heatsink; must be isolated from ground unless system topology requires common-drain configuration.
Source (Lead 1)	Reference node for gate drive and current return path	Low-inductance connection critical for stable switching; internal source inductance LS = 7.5 nH affects gate ringing.
Gate (Lead 3)	Control electrode modulating channel conductivity	High-impedance input requiring <100 nA leakage; Miller charge Q_gd = 15 nC dominates turn-off dynamics.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	26.5 mΩ at 10 V drive - Reduces conduction loss by ≥20% vs. legacy 100 V MOSFETs in same package, improving efficiency in 12–48 V SMPS.
Repetitive avalanche rated	Tested to 83 mJ single-pulse and validated for repeated events up to T_jmax - Eliminates need for external clamping in relay-driving and solenoid-control applications.
175°C junction rating	Rated operation up to 175°C - Enables use in under-hood automotive modules and enclosed industrial controllers without derating.
Fast switching with low Q_gd	Q_gd = 15 nC - Minimizes Miller-induced shoot-through risk in half-bridge configurations and supports >200 kHz PWM in LLC resonant converters.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in telecom power shelves.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 250 kHz with 30% duty cycle.

Use Value: 26.5 mΩ R_DS(on) limits conduction loss to 0.96 W at 36 A, reducing heatsink size by 35% versus 40 mΩ alternatives.

Use Scenario: H-bridge control of 24 V, 20 A brushed motor in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and freewheeling via body diode.

Use Value: Q_rr = 41–62 nC and t_rr = 33–50 ns minimize diode recovery loss and EMI during direction reversal.

Uninterruptible Power Supply (UPS)

Industrial Solenoid Driver

Use Scenario: Inverter stage converting 350 V DC bus to 230 V AC output in line-interactive UPS.

IC Role / Device Role / Timing Role: Half-bridge leg switch with 50 kHz PWM and active clamping.

Use Value: 100 V V_DSS provides 20% margin over 350 V bus (derated for ripple), and E_AS = 83 mJ absorbs inductive spikes during fault shutdown.

Use Scenario: Driving 12 V, 15 A solenoid valve in pneumatic control cabinet with 10 ms on-time pulses.

IC Role / Device Role / Timing Role: Single-ended switch with flyback diode protection and fast turn-off.

Use Value: Repetitive avalanche rating allows direct drive without external TVS, reducing BOM count and board space by 2 components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	R_DS(on) = 10.5 mΩ @ 10 V; higher gate charge (Q_g = 85 nC); TO-220 package	Better conduction efficiency but slower switching; unsuitable for >150 kHz designs due to Q_g and package inductance	Select when thermal budget is tight and switching frequency ≤100 kHz; verify gate driver can supply 2 A peak.
IXTP120N10T	R_DS(on) = 12.5 mΩ @ 10 V; 150°C T_jmax; TO-220FP package with insulated tab	Lower thermal rating and no avalanche testing data published; requires external snubber in inductive loads	Prefer only in cost-sensitive, non-avalanche-critical applications; avoid in motor or solenoid drive without added protection.

Compared with STP100N10F7 and IXTP120N10T, IRF540ZSTRR offers balanced trade-offs: moderate R_DS(on) with proven avalanche ruggedness and TO-262 thermal performance-making it optimal for industrial motor controls where reliability trumps marginal efficiency gains.

Availability

IRF540ZSTRR is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drives, uninterruptible power supplies, and industrial solenoid drivers requiring stable component supply across multi-year production cycles.

Supply support for IRF540ZSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IRF540ZSTRR belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motion control systems where thermal stability and ruggedness are critical.

FAQ

Is IRF540ZSTRR pin-compatible with IRF540N?

No. IRF540ZSTRR uses a TO-262 (I²PAK) package with three gull-wing leads and an isolated metal tab, whereas IRF540N is in TO-220AB with through-hole mounting and non-isolated tab. Pin numbering differs: Drain is lead 2 (not lead 2 in TO-220), and mechanical footprint is incompatible without PCB redesign.

What is the maximum recommended gate resistor for 200 kHz switching?

A 10 Ω gate resistor is recommended for 200 kHz operation with IRF540ZSTRR, balancing switching speed (t_r/t_f ≈ 50 ns) against gate driver stress and EMI. Lower values (<5 Ω) increase peak gate current beyond 2 A and risk ringing; higher values (>22 Ω) extend switching time and raise losses above 150 kHz.

Does IRF540ZSTRR require a heatsink at 25 A continuous current?

Yes. At 25 A and R_DS(on) = 26.5 mΩ, power dissipation is 16.6 W. With R_θJC = 1.64 °C/W and typical R_θCS = 0.5 °C/W, a heatsink with R_θSA ≤ 2.5 °C/W is required to maintain T_j ≤ 125°C at 25°C ambient-verified using Fig. 9 and Fig. 11 in the official datasheet.

Can IRF540ZSTRR replace IRFZ44 in existing designs?

Only with layout and thermal review. IRF540ZSTRR has higher V_DSS (100 V vs. 55 V) and lower R_DS(on) (26.5 mΩ vs. 28 mΩ), but its TO-262 footprint differs from IRFZ44's TO-220. Gate threshold (2.0–4.0 V) matches, but avalanche rating and SOA curves differ-revalidation of worst-case inductive turn-off is mandatory.

IRF540ZSTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF540ZSTRR FAQ

1.How can I place an order for IRF540ZSTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540ZSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540ZSTRR reliable?

The price and inventory of IRF540ZSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540ZSTRR is usually 5 days.

3.What payment methods are accepted for IRF540ZSTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540ZSTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540ZSTRR?

IRF540ZSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540ZSTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540ZSTRR?

For technical support, including IRF540ZSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540ZSTRR requirements.

6.How does Aetrix verify that IRF540ZSTRR is sourced from the original manufacturer or authorized distributors?

All IRF540ZSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540ZSTRR meets industry standards.

7.What is the process for return or replacement of IRF540ZSTRR?

All IRF540ZSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF540ZSTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540ZSTRR part is unused and in its original packaging.

Return procedure for IRF540ZSTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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