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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF540ZSTRRPBF

Name: IRF540ZSTRRPBF
Brand: Infineon Technologies
SKU: IRF540ZSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF540ZSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF540ZSTRRPBF.pdf

Description:: MOSFET N-CH 100V 36A D2PAK

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Product details

Overview

IRF540ZSTRRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET with 100V V_DSS, 26.5mΩ R_DS(on) at V_GS = 10V, and 36A continuous drain current at T_C = 25°C. It operates up to 175°C junction temperature, features fast switching (t_r = 51ns, t_f = 39ns), and supports repetitive avalanche up to T_jmax. It serves as a high-efficiency main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF540ZSTRRPBF datasheet, IRF540ZSTRRPBF pinout, IRF540ZSTRRPBF application, or IRF540ZSTRRPBF equivalent, key selection criteria include its 26.5mΩ on-resistance at 10V gate drive, 175°C thermal rating, 63nC total gate charge, body diode reverse recovery charge of 41–62nC, and TO-262 (I2PAK) package thermal resistance of 1.64°C/W junction-to-case.

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per die area while maintaining robust avalanche capability. Its gate threshold voltage (2.0–4.0V) enables compatibility with 3.3V and 5V logic-level drivers when operated with sufficient overdrive, and its 100V breakdown rating targets 48V industrial bus and 24V automotive load-switching applications.

The device integrates a low-V_SD (≤1.3V) body diode with 33–50ns reverse recovery time and 41–62nC Q_rr, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design is enabled by validated transient impedance curves and a 1.64°C/W R_θJC for direct heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Withstands 100V drain-source blocking voltage before avalanche onset; suitable for 48V nominal systems with 2× voltage margin.
R_DS(on)	26.5mΩ max @ V_GS = 10V, T_J = 25°C - Determines conduction loss in high-current paths; 22A operation yields ≤13W I²R loss at room temperature.
I_D (cont)	36A @ T_C = 25°C - Maximum continuous drain current under ideal heatsinking; derates to 25A at T_C = 100°C.
Q_g	63nC max - Total gate charge required for full turn-on; dictates driver strength requirement and switching loss trade-off.
T_J max	175°C - Enables operation in high-ambient environments without thermal shutdown; validated for repetitive avalanche up to this limit.
E_AS	83mJ tested - Single-pulse avalanche energy rating; defines safe unclamped inductive switching capability under defined test conditions.
V_GS(th)	2.0–4.0V - Gate threshold range ensures reliable turn-on with standard 5V microcontroller outputs and avoids false triggering near ground.

Pinout & Package

IRF540ZSTRRPBF is housed in a TO-262 (I2PAK) surface-mount package with isolated tab, optimized for automated assembly and moderate-power thermal management. The package provides 1.64°C/W junction-to-case thermal resistance when mounted on a flat greased heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to exposed copper tab; must be electrically isolated from heatsink unless system ground reference permits.
Source	Current return path and reference node	Serves as power ground reference for gate drive; internal bond wires contribute 7.5nH source inductance affecting switching behavior.
Gate	Control input for channel modulation	High-impedance MOS gate requiring <200nA leakage control; Miller charge (Q_gd = 15nC) dominates turn-off timing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	26.5mΩ at 10V drive reduces conduction losses in high-current 48V DC-DC stages and motor phase legs.
175°C operating temperature	Enables sustained operation in sealed enclosures or high-ambient industrial environments without forced air cooling.
Fast switching speed	51ns rise / 39ns fall times support >100kHz PWM frequencies while limiting switching loss in SMPS designs.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_jmax, eliminating need for external snubbers in relay/valve driver circuits.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; Pb-free plating and solderable terminations meet IPC-J-STD-020 moisture sensitivity level 1.

Applications

Industrial Motor Drive

DC-DC Converter Switch

Use Scenario: Half-bridge leg in 24V/48V brushless DC motor controllers driving fans, pumps, or conveyors.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling phase current commutation; synchronized to PWM controller with dead-time management.

Use Value: 26.5mΩ R_DS(on) minimizes I²R heating at 22A peak load; 175°C rating sustains operation during stall or overload events.

Use Scenario: Primary-side switch in non-isolated buck or synchronous buck-boost converters for programmable power supplies.

IC Role / Device Role / Timing Role: Main energy-transfer switch cycling at 200kHz; gate driven by dedicated MOSFET driver IC with 12Ω series resistance.

Use Value: 63nC Q_g balances driver loss and switching loss; 100V V_DSS accommodates 48V input with 2× safety margin and transient overshoot.

Automotive Load Switch

LED Driver Switch

Use Scenario: High-current load switch for headlights, fog lamps, or HVAC blowers in 12V/24V vehicle electrical systems.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays; controlled via microcontroller GPIO with soft-start sequencing.

Use Value: Repetitive avalanche rating handles inductive kickback from lamp filaments and motor windings without external clamping diodes.

Use Scenario: Constant-current switch in high-brightness LED string drivers for signage or architectural lighting.

IC Role / Device Role / Timing Role: PWM dimming transistor modulating LED current at 1–5kHz; thermally coupled to aluminum PCB.

Use Value: 1.3V body diode forward voltage enables efficient freewheeling during off-time; 36A rating supports parallel LED arrays up to 100W.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60V V_DSS, 12mΩ R_DS(on), TO-220 package, lower voltage rating	Limited to ≤48V systems; better conduction efficiency but no 100V margin	Select when primary concern is R_DS(on) at 5–12V V_GS and 60V bus is sufficient.
IRF3205PBF	55V V_DSS, 8.0mΩ R_DS(on), TO-220, higher ID (110A)	Not suitable for 100V applications; superior conduction but narrower voltage scope	Prefer for high-current 12–24V battery-powered inverters where voltage headroom is constrained.

Compared with STP55NF06L and IRF3205PBF, IRF540ZSTRRPBF trades lower on-resistance for higher voltage capability and TO-262 surface-mount compatibility-making it optimal for space-constrained 48V industrial power stages requiring 100V surge tolerance and thermal reliability.

Availability

IRF540ZSTRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converter switches, and automotive load switching requiring stable component supply across multi-year production cycles.

Supply support for IRF540ZSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency switching in industrial power conversion, motor control, and ruggedized load management applications.

FAQ

What is the maximum continuous drain current for IRF540ZSTRRPBF at 100°C case temperature?

The maximum continuous drain current is 25A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, and assumes proper heatsinking with R_θJC = 1.64°C/W and ambient airflow or thermal interface compliance.

Does IRF540ZSTRRPBF support logic-level gate drive?

No-it is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0V to 4.0V, but full enhancement requires V_GS ≥ 10V to achieve the rated 26.5mΩ R_DS(on). Driving with only 3.3V or 5V will result in significantly higher on-resistance and excessive conduction loss; a gate driver with ≥10V output is required.

Can IRF540ZSTRRPBF be used in parallel configurations?

Yes, but with strict layout and gate drive matching. The device exhibits positive temperature coefficient for R_DS(on) (confirmed in Fig. 10), enabling current sharing. However, individual gate resistors (≥10Ω), matched trace lengths, and Kelvin-source connections are mandatory to prevent oscillation and unequal current distribution under dynamic load.

What is the body diode's reverse recovery performance?

The body diode has t_rr = 33–50ns and Q_rr = 41–62nC at I_F = 22A, T_J = 25°C. These values are measured with di/dt = 100A/µs and indicate suitability for moderate-frequency freewheeling, though synchronous rectification is recommended for >100kHz operation to avoid diode-related switching loss.

IRF540ZSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF540ZSTRRPBF FAQ

1.How can I place an order for IRF540ZSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540ZSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540ZSTRRPBF reliable?

The price and inventory of IRF540ZSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540ZSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF540ZSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540ZSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540ZSTRRPBF?

IRF540ZSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540ZSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540ZSTRRPBF?

For technical support, including IRF540ZSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540ZSTRRPBF requirements.

6.How does Aetrix verify that IRF540ZSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF540ZSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540ZSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF540ZSTRRPBF?

All IRF540ZSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF540ZSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540ZSTRRPBF part is unused and in its original packaging.

Return procedure for IRF540ZSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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