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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5800TRPBF

Name: IRF5800TRPBF
Brand: Infineon Technologies
SKU: IRF5800TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5800TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: IRF5800TRPBF.pdf

Description:: MOSFET P-CH 30V 4A MICRO6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF5800TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load and battery management switching. It features -30 V V_DS, 0.085 Ω R_DS(on) at V_GS = -10 V and I_D = -4.0 A, 2.0 W power dissipation at T_A = 25°C, and TSOP-6 surface-mount package - enabling compact DC-DC converter and USB power-switching applications.

For engineers reviewing the IRF5800TRPBF datasheet, IRF5800TRPBF pinout, IRF5800TRPBF application, or IRF5800TRPBF equivalent, key selection criteria include verified R_DS(on) at -4.5 V gate drive, pulsed avalanche energy (20.6 mJ), body diode reverse recovery (19–28 ns), thermal resistance (62.5 °C/W), and TSOP-6 leadframe layout compatibility with space-constrained PCBs.

Technical Context

This device operates as a low-side switch in P-channel configuration, requiring negative gate-to-source voltage for turn-on. Its ultra-low R_DS(on) is achieved via HEXFET silicon processing optimized for high current density per unit area, with gate charge (Q_g = 11.4–17 nC) and Miller charge (Q_gd = 2.2 nC) supporting fast switching in synchronous buck and OR-ing circuits.

The integrated body diode exhibits V_SD = -1.2 V at I_S = -2.0 A and T_J = 25°C, with reverse recovery time (t_rr) of 19–28 ns under dI/dt = -100 A/µs - critical for minimizing shoot-through loss in bidirectional power paths and hot-swap controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - maximum blocking voltage for 24 V system-level load switching
R_DS(on)	0.085 Ω @ V_GS = -10 V, I_D = -4.0 A - enables <170 mW conduction loss at full rated current
I_D (T_A = 25°C)	-4.0 A - continuous drain current capability with standard FR-4 board mounting
E_AS	20.6 mJ - single-pulse avalanche energy rating supports inductive load interruption without failure
R_θJA	62.5 °C/W - junction-to-ambient thermal resistance defines heatsink-free operation up to ~1.3 W at 70°C ambient
t_rr	19–28 ns - fast body diode recovery reduces cross-conduction risk in half-bridge topologies
Q_g	11.4–17 nC - total gate charge determines driver strength requirement for <100 ns switching transitions

Pinout & Package

IRF5800TRPBF is housed in a thermally enhanced TSOP-6 surface-mount package with exposed drain pad for improved heat transfer. The leadframe design reduces R_DS(on) by 60% versus SOT-23 equivalents and increases current handling by ~300%.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Internally connected to common drain terminal and exposed thermal pad - primary current path and heat sink interface
5	Gate (G)	Control input requiring negative V_GS to turn on; low Q_g enables efficient driving from logic-level sources
6	Source (S)	Reference node for gate drive and current return path; tied to system ground in low-side switch configurations

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.085 Ω at -10 V gate drive - minimizes I²R losses in portable battery-powered systems
TSOP-6 package	Space-saving footprint with integrated thermal pad - replaces larger SO-8 or DPAK in space-constrained designs
Low gate charge	Q_g = 11.4–17 nC - reduces driver power consumption and simplifies gate drive circuitry
Robust avalanche rating	E_AS = 20.6 mJ - ensures reliable operation during inductive load transients without external snubbers
Fast body diode	t_rr = 19–28 ns - supports high-frequency synchronous rectification and OR-ing functions

Applications

Battery Protection Circuit

USB Power Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel MOSFET used as back-to-back switch to prevent battery discharge into faulty loads or reverse polarity connection.

Use Value: 0.085 Ω R_DS(on) limits voltage drop to <340 mV at 4 A, preserving battery runtime and thermal margin.

Use Scenario: Hot-plug power control for USB Type-A downstream ports in docking stations.

IC Role / Device Role / Timing Role: Low-side load switch enabling controlled power ramp-up and fault current limiting.

Use Value: Fast t_rr (19–28 ns) and low Q_g support clean 5 V rail sequencing without bus glitches during insertion.

DC-DC Converter High-Side Switch

Industrial Sensor Power Gate

Use Scenario: High-side switch in non-synchronous buck converters for 12 V to 5 V conversion.

IC Role / Device Role / Timing Role: P-channel MOSFET driven directly from microcontroller GPIO with level-shifting.

Use Value: -30 V V_DS and -4.0 A I_D support industrial 24 V input rails with margin for voltage spikes.

Use Scenario: Remote on/off control of 3.3 V sensor sub-circuits in programmable logic controllers.

IC Role / Device Role / Timing Role: Load switch isolating sensor supply to reduce standby current and enable firmware-controlled power cycling.

Use Value: 2.0 W PD at 25°C ambient allows sustained operation without heatsinking in enclosed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2305DS-T1-GE3	R_DS(on) = 0.055 Ω @ -4.5 V (lower), but V_DS = -20 V (reduced voltage margin)	Better suited for 5 V logic-level systems; not recommended for 24 V industrial inputs	Select when gate drive is limited to -4.5 V and system voltage ≤ 12 V
DMG3415L-7	R_DS(on) = 0.045 Ω @ -4.5 V, but E_AS = 12 mJ (lower), and no published t_rr data	Higher efficiency at low V_GS, but reduced ruggedness in inductive switching	Prefer for battery-powered consumer devices where avalanche stress is minimal

Compared with Si2305DS-T1-GE3 and DMG3415L-7, IRF5800TRPBF offers superior voltage rating (-30 V) and verified avalanche robustness (20.6 mJ), making it more suitable for industrial 24 V systems where transient immunity and long-term reliability outweigh marginal R_DS(on) gains.

Availability

IRF5800TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, DC-DC converter high-side switches, and industrial sensor power gates requiring stable component supply across production lifecycles.

Supply support for IRF5800TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The IRF5800TRPBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for high-current, low-voltage switching in space-constrained battery and load management systems.

FAQ

Is IRF5800TRPBF suitable for 24 V automotive applications?

No - while rated for -30 V V_DS, IRF5800TRPBF is qualified for the Consumer market per Infineon documentation and lacks AEC-Q101 qualification, temperature cycling validation, or extended -40°C to +125°C operation. It is appropriate for industrial 24 V systems but not automotive under-hood environments.

What is the maximum safe operating current at 70°C ambient?

At T_A = 70°C, the derated continuous drain current is -3.2 A per datasheet. This assumes standard FR-4 PCB mounting with no heatsink; actual current capacity improves with copper pour area or forced airflow, but must stay within the 1.3 W power dissipation limit at that temperature.

Does IRF5800TRPBF require a gate resistor for stability?

A gate resistor (typically 10–100 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop, especially when switching >100 kHz. The device's Q_gd/Q_gs ratio and low C_iss (535 pF) make it susceptible to oscillation without proper gate control, particularly in high-di/dt applications.

Can IRF5800TRPBF be used in parallel with identical units?

Yes - its positive R_DS(on) temperature coefficient (0.02 V/°C breakdown voltage drift, normalized R_DS(on) increase with temperature) promotes current sharing. However, matched gate drive layout, symmetrical PCB traces, and individual gate resistors are required to ensure balanced dynamic turn-on and avoid current hogging.

IRF5800TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 85mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 535 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(TSOP-6)

IRF5800TRPBF FAQ

1.How can I place an order for IRF5800TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5800TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5800TRPBF reliable?

The price and inventory of IRF5800TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5800TRPBF is usually 5 days.

3.What payment methods are accepted for IRF5800TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5800TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5800TRPBF?

IRF5800TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5800TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5800TRPBF?

For technical support, including IRF5800TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5800TRPBF requirements.

6.How does Aetrix verify that IRF5800TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF5800TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5800TRPBF meets industry standards.

7.What is the process for return or replacement of IRF5800TRPBF?

All IRF5800TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5800TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5800TRPBF part is unused and in its original packaging.

Return procedure for IRF5800TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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