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Infineon Technologies IRF5802
- Part No.:
- IRF5802
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
IRF5802.pdf
- Description:
- MOSFET N-CH 150V 900MA MICRO6
- Quantity:
- Payment:
- Shipping:
Inventory:8,937
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Product details
Overview
IRF5802 from Infineon Technologies (formerly International Rectifier) is a 150V, 0.9A N-channel enhancement-mode MOSFET in TSOP-6 package, optimized for high-frequency DC-DC converters. It features 1.2Ω RDS(on) at VGS = 10V, 4.5–6.8nC total gate charge, and 3.0pF effective output capacitance (Coss,eff) to minimize switching loss in SMPS topologies.
For engineers reviewing the IRF5802 datasheet, IRF5802 pinout, IRF5802 application, or IRF5802 equivalent, key selection criteria include its low Qgd/Qg ratio (≈53%), fully characterized Coss vs. VDS, avalanche-rated operation (9.5mJ EAS), and TSOP-6 thermal performance (RθJA = 62.5°C/W on 1-in² copper).
Technical Context
The IRF5802 employs a planar HEXFET® structure with optimized cell pitch and trench-free die geometry to achieve stable RDS(on) over temperature (0.19V/°C dV(BR)DSS/dTJ). Its gate charge profile-Qgs = 1.0–1.5nC, Qgd = 2.4–3.6nC-enables precise control of dv/dt during hard-switching transitions.
Dynamic parameters are fully specified across voltage and temperature: Ciss = 88pF, Coss = 14–110pF (dependent on VDS), and Crss = 7.7pF at 1MHz. The body diode exhibits trr = 46–69ns and Qrr = 55–83nC under 100A/µs di/dt, supporting synchronous rectification and flyback snubberless designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150V - supports input rails up to 120V DC with margin for transient overshoot in industrial SMPS |
| RDS(on) max | 1.2Ω @ VGS = 10V - enables <1.1W conduction loss at 0.9A continuous drain current |
| Qg typ/max | 4.5/6.8nC - determines gate drive power and switching speed in 100–500kHz converters |
| Coss,eff | 3.0pF - fixed capacitance modeling actual energy stored in output capacitance during VDS rise (0→120V) |
| EAS | 9.5mJ - specifies single-pulse unclamped inductive switching robustness without external snubber |
| RθJA | 62.5°C/W - defines thermal derating on standard 1-inch square copper PCB (no heatsink required below 0.7A) |
| tr/tf | 1.6/9.2ns - fast turn-on but intentionally slower fall time to limit EMI in compact layouts |
Pinout & Package
IRF5802 is housed in a surface-mount TSOP-6 package (3.05 × 1.6mm footprint, 1.1mm height), optimized for high-density power stages and automated assembly. Thermal pad is not exposed; junction-to-ambient thermal resistance is rated at 62.5°C/W on 1-in² copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤±30V bias; Miller charge (Qgd) dominates switching transition timing |
| 2 (D) | Drain | Main high-side switching node; connected to VIN or transformer primary; carries full load current and switching transients |
| 3 (D) | Drain | Second drain connection - paralleled internally to reduce package inductance and improve current sharing |
| 4 (S) | Source | Power return path and reference for gate drive; also cathode of integral body diode |
| 5 (D) | Drain | Third drain connection - electrically identical to pins 2 and 3; reduces thermal resistance via multi-terminal layout |
| 6 (D) | Drain | Fourth drain connection - completes quad-drain configuration for enhanced current handling and thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| Low Qgd/Qg ratio | ≈53% - reduces sensitivity to Miller-induced shoot-through in half-bridge configurations |
| Fully characterized Coss(VDS) | 14pF @ 120V, 110pF @ 1V - enables accurate soft-switching timing and ZVS design in resonant topologies |
| Specified avalanche energy (EAS) | 9.5mJ - allows reliable operation in unclamped inductive switching without external protection components |
| Body diode Qrr and trr | 55–83nC / 46–69ns - supports efficient synchronous rectification and reduces reverse recovery losses |
| TSOP-6 quad-drain layout | Four parallel drain terminals - lowers package inductance (<0.5nH) and improves thermal dissipation uniformity |
Applications
| High-Frequency Flyback Converter | Isolated Gate Driver Power Stage |
|---|---|
Use Scenario: Primary-side switch in 20–300kHz flyback converters powering industrial sensors and PLC I/O modules. IC Role / Device Role / Timing Role: High-side switching element controlling energy transfer into transformer primary; operates in discontinuous conduction mode (DCM). Use Value: Low Coss,eff (3.0pF) minimizes capacitive turn-on loss; 150V rating accommodates reflected output voltage plus leakage spike margin. | Use Scenario: Output stage of isolated DC-DC bias supply feeding gate drivers in motor inverters. IC Role / Device Role / Timing Role: Regulated 12–15V output switch; synchronized to main inverter PWM to suppress cross-conduction noise. Use Value: Quad-drain TSOP-6 layout ensures low parasitic inductance, critical for clean gate-drive edge integrity and EMI compliance. |
| Compact USB-C PD Adapter | Industrial PoE Midspan Injector |
Use Scenario: Primary switch in 200–350kHz QR flyback for 20–60W USB-C power delivery adapters. IC Role / Device Role / Timing Role: Fast-switching MOSFET enabling zero-voltage switching (ZVS) at light loads via valley detection. Use Value: Fully characterized Coss vs. VDS curve allows precise valley timing window calculation for >93% efficiency at 25% load. | Use Scenario: 48V primary-side switch in midspan PoE injectors delivering up to 90W per port (IEEE 802.3bt Type 4). IC Role / Device Role / Timing Role: Hard-switched high-side FET in forward converter topology; handles 48V input with 30% overhead for surge immunity. Use Value: 9.5mJ EAS rating withstands line surges and cable-disconnect transients without failure or parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2302DS | RDS(on) = 0.095Ω @ 4.5V, but VDSS = 20V - unsuitable for >30V systems | Only viable in low-voltage buck regulators (<24V input); cannot replace IRF5802 in 120V flyback | Select only if system VIN ≤ 20V and gate drive is 3.3V/5V logic-level. |
| DMN2004LK-7 | RDS(on) = 1.4Ω @ 10V, Qg = 5.8nC, Coss,eff = 4.2pF - higher conduction loss and slightly slower switching | Acceptable in lower-efficiency 100kHz SMPS where thermal margin exists; lacks published EAS rating | Use when cost is prioritized over avalanche ruggedness and Coss accuracy. |
Compared with Si2302DS and DMN2004LK-7, the IRF5802 delivers superior high-voltage ruggedness (150V), verified avalanche capability (9.5mJ), and precisely modeled Coss,eff-making it uniquely suited for industrial flyback and isolated bias supply designs requiring predictable hard-switching behavior.
Availability
IRF5802 is available at Aetrix Electronics and suitable for high-frequency flyback converters, isolated gate driver power stages, and industrial PoE midspan injectors requiring stable component supply and long-term lifecycle support.
Supply support for IRF5802 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and qualification standards aligned to industrial and automotive reliability requirements.
The IRF5802 belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-frequency switched-mode power supplies in industrial, telecom, and consumer power adapter applications.
FAQ
What is the maximum continuous drain current for IRF5802 at 70°C ambient?
The IRF5802 supports 0.7A continuous drain current at TA = 70°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from 0.9A at 25°C using the linear derating factor of 0.02W/°C and RθJA = 62.5°C/W on standard PCB layout.
Does IRF5802 have an exposed thermal pad in the TSOP-6 package?
No, the TSOP-6 package used for IRF5802 does not feature an exposed thermal pad. Thermal performance relies on copper area under the leads and solder joint conduction; RθJA = 62.5°C/W is measured on a 1-inch square copper board without additional heatsinking.
Can IRF5802 be used in synchronous rectification configurations?
Yes - the IRF5802's body diode has characterized trr = 46–69ns and Qrr = 55–83nC, enabling controlled synchronous rectification in secondary-side flyback or forward converters. However, its RDS(on) is higher than dedicated SR FETs, so efficiency gain is most pronounced above 12V output.
What is the significance of Coss,eff = 3.0pF in IRF5802's datasheet?
Coss,eff = 3.0pF is a derived value representing the fixed capacitance that yields the same energy storage and charging time as the nonlinear Coss(VDS) curve during VDS rise from 0 to 96V (80% of 120V). It simplifies ZVS timing calculations and snubber design in resonant converters without iterative simulation.
IRF5802 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 540mA, 10V
- Vgs(th) (Max) @ Id:
- 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.8 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 88 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro6™(TSOP-6)
IRF5802 FAQ
1.How can I place an order for IRF5802 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF5802 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF5802 reliable?
The price and inventory of IRF5802 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5802 is usually 5 days.
3.What payment methods are accepted for IRF5802?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5802 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF5802?
IRF5802 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF5802 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF5802?
For technical support, including IRF5802 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5802 requirements.
6.How does Aetrix verify that IRF5802 is sourced from the original manufacturer or authorized distributors?
All IRF5802 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5802 meets industry standards.
7.What is the process for return or replacement of IRF5802?
All IRF5802 units undergo pre-shipment inspection (PSI). If there is an issue with IRF5802, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF5802 part is unused and in its original packaging.
Return procedure for IRF5802:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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