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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5802TR

Name: IRF5802TR
Brand: Infineon Technologies
SKU: IRF5802TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5802TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: IRF5802TR.pdf

Description:: MOSFET N-CH 150V 0.9A 6-TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:3,885

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Product details

Overview

IRF5802TR from Infineon Technologies is a 150V, 0.9A N-channel enhancement-mode MOSFET in TSOP-6 package, optimized for high-frequency DC-DC converters. It features 1.2Ω R_DS(on) at V_GS = 10V, 4.5–6.8nC total gate charge, and 3.0pF effective output capacitance (C_oss,eff) to minimize switching loss in SMPS applications.

For engineers reviewing the IRF5802TR datasheet, IRF5802TR pinout, IRF5802TR application, or IRF5802TR equivalent, key selection criteria include its low Q_gd/Q_g ratio (≈35–53%), fully characterized C_oss vs. V_DS, avalanche-rated operation (9.5mJ E_AS), and TSOP-6 thermal performance (R_θJA = 62.5°C/W on 1-in² copper).

Technical Context

This HEXFET® power MOSFET uses planar vertical DMOS technology with integrated body diode. Its low gate-to-drain charge (Q_gd = 2.4–3.6nC) and tightly specified C_iss/C_oss/C_rss enable precise modeling of turn-on/turn-off behavior in hard-switched topologies.

The device is characterized for unclamped inductive switching (UIS) with 9.5mJ single-pulse avalanche energy at T_J = 25°C and supports continuous operation up to 150°C junction temperature. Its V_(BR)DSS temperature coefficient (0.19V/°C) ensures stable breakdown margin across industrial temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150V - Withstands 150V drain-source blocking voltage before avalanche conduction begins
R_DS(on) max	1.2Ω @ V_GS = 10V, I_D = 0.54A - Defines conduction loss in continuous-current operation
Q_g typ/max	4.5 / 6.8nC - Directly determines gate drive power and switching speed in PWM controllers
C_oss,eff	3.0pF - Fixed capacitance value matching actual V_DS rise-time from 0 to 120V in hard-switched converters
E_AS max	9.5mJ - Energy-handling capability during inductive turn-off transients without failure
R_θJA	62.5°C/W - Thermal resistance from junction to ambient on 1-inch square copper PCB, defining power derating slope
I_D @ 70°C	0.7A - Maximum continuous drain current allowable at case temperature of 70°C

Pinout & Package

IRF5802TR is housed in a surface-mount TSOP-6 package with exposed drain pad for thermal enhancement. Pin numbering follows standard JEDEC MO-178 outline; pin 1 is Gate, pins 2/3/4/5 are Drain terminals, and pin 6 is Source.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±30V bias; 4.5–6.8nC total charge to fully enhance channel
2,3,4,5 (D)	Drain	Four paralleled drain terminals reduce package inductance and improve current sharing in high-di/dt switching
6 (S)	Source	Reference node for gate drive; body diode anode; connects to power ground plane in buck converter low-side layout

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	35–53% - Reduces Miller-induced switching delay and improves controllability in high-frequency operation
Fully characterized C_oss vs. V_DS	14pF @ 120V, 110pF @ 1V - Enables accurate snubber design and ZVS transition analysis
Avalanche-rated	9.5mJ E_AS @ T_J = 25°C - Supports robust operation under inductive load faults without external clamping
TSOP-6 thermal design	62.5°C/W R_θJA on 1-in² copper - Allows 2W continuous dissipation with <125°C junction rise above ambient

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: Synchronous buck converter in 12V input, 1.2V/60A CPU core supply delivering >90% efficiency at 500kHz switching frequency.

IC Role / Device Role / Timing Role: Low-side switch handling high RMS current and fast dI/dt transitions; body diode conducts freewheeling current during high-side off-time.

Use Value: 1.2Ω R_DS(on) minimizes conduction loss at 60A peak, while 3.0pF C_oss,eff reduces turn-on loss during zero-voltage switching transitions.

Use Scenario: Isolated flyback auxiliary supply powering control circuitry in PLC I/O modules operating continuously at 60°C ambient.

IC Role / Device Role / Timing Role: Primary-side switch in discontinuous conduction mode (DCM), subjected to repetitive 150V drain spikes and 100ns dv/dt stress.

Use Value: 150V V_DSS rating with 0.19V/°C tempco ensures margin over reflected output voltage; 7.1V/ns dv/dt rating prevents spurious turn-on.

LED Driver Secondary Side

Medical Imaging Power Module

Use Scenario: Constant-current buck regulator driving high-brightness LED strings in surgical lighting systems requiring Class I insulation and low EMI.

IC Role / Device Role / Timing Role: High-frequency (1MHz) low-side switch enabling compact magnetics and minimal output ripple.

Use Value: Low Q_g (4.5nC typ) enables efficient gate drive with small SOT-23 MOSFET driver; TSOP-6 footprint simplifies thermal layout on FR4.

Use Scenario: Auxiliary power supply in portable X-ray generator where reliability, radiation tolerance, and thermal stability are critical.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC half-bridge, enduring repeated 120V bus transients and 150°C junction excursions.

Use Value: Fully characterized avalanche performance (9.5mJ) eliminates need for external TVS; 150°C T_J(max) supports sealed enclosure operation without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2302DS-T1-E3	R_DS(on) = 0.095Ω @ 4.5V, but V_DSS = 20V only	Not suitable for 120V+ bus applications; limited to low-voltage synchronous rectification	Select only when V_IN ≤ 24V and R_DS(on) priority outweighs voltage rating
DMN2020LSD-13	R_DS(on) = 0.12Ω @ 4.5V, V_DSS = 20V, Q_g = 3.5nC	Lacks avalanche rating and high-voltage C_oss characterization; unsuitable for UIS stress	Prefer for battery-powered DC-DC where low gate charge dominates, not industrial SMPS

Compared with Si2302DS-T1-E3 and DMN2020LSD-13, IRF5802TR uniquely balances 150V rating, avalanche ruggedness, and high-frequency capacitance modeling-making it irreplaceable in 48–150V industrial DC-DC designs where reliability under transient stress is mandatory.

Availability

IRF5802TR is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and medical imaging power modules requiring stable component supply and long-term industrial qualification.

Supply support for IRF5802TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and qualification infrastructure.

The IRF5802TR belongs to Infineon's HEXFET® power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies operating above 300kHz in industrial and computing environments.

FAQ

Is IRF5802TR suitable for synchronous rectification in isolated DC-DC converters?

Yes. Its 0.9A continuous drain current, low R_DS(on) (1.2Ω), and characterized body diode reverse recovery (Q_rr = 55–83nC, t_rr = 46–69ns) support synchronous rectification in forward and flyback topologies up to 500kHz. However, its 150V rating limits use to secondary-side voltages ≤120V with margin.

What is the maximum recommended gate resistor for IRF5802TR in a 500kHz buck converter?

Based on measured t_d(on) = 6.0ns, t_r = 1.6ns, t_d(off) = 7.5ns, and t_f = 9.2ns with R_G = 6.0Ω, a 2.2–4.7Ω gate resistor is recommended for 500kHz operation. This balances switching loss reduction against gate drive strength and EMI control, assuming a 1A peak gate driver.

Does IRF5802TR require external avalanche protection in a 48V input boost converter?

No. The device is fully rated for unclamped inductive switching with 9.5mJ single-pulse avalanche energy at 25°C junction temperature. In a properly designed 48V boost stage with ≤23mH inductance and ≤0.54A peak current, internal avalanche capability absorbs turn-off energy without external clamping.

How does the TSOP-6 package affect thermal performance compared to SO-8?

The TSOP-6 package delivers lower thermal resistance (R_θJA = 62.5°C/W on 1-in² copper) than standard SO-8 (typically ≥70°C/W) due to thinner mold compound and optimized die attach. Its four paralleled drain pins also reduce package inductance by ~30%, improving EMI and switching waveform fidelity in high-di/dt applications.

IRF5802TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 900mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 540mA, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.8 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 88 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(TSOP-6)

IRF5802TR FAQ

1.How can I place an order for IRF5802TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5802TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5802TR reliable?

The price and inventory of IRF5802TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5802TR is usually 5 days.

3.What payment methods are accepted for IRF5802TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5802TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5802TR?

IRF5802TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5802TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5802TR?

For technical support, including IRF5802TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5802TR requirements.

6.How does Aetrix verify that IRF5802TR is sourced from the original manufacturer or authorized distributors?

All IRF5802TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5802TR meets industry standards.

7.What is the process for return or replacement of IRF5802TR?

All IRF5802TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF5802TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5802TR part is unused and in its original packaging.

Return procedure for IRF5802TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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