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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5803

Name: IRF5803
Brand: Infineon Technologies
SKU: IRF5803
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5803

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: IRF5803.pdf

Description:: MOSFET P-CH 40V 3.4A MICRO6

Quantity:: RFQ Add To RFQ list

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Inventory:7,100

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Product details

Overview

IRF5803 from Infineon is a P-channel enhancement-mode HEXFET® Power MOSFET in TSOP-6 package, rated for -40 V V_DS, 112 mΩ R_DS(on) at V_GS = -10 V and -3.4 A continuous drain current, optimized for low-voltage load switching in portable battery-powered systems.

For engineers reviewing the IRF5803 datasheet, IRF5803 pinout, IRF5803 application, or IRF5803 equivalent, key selection criteria include verified R_DS(on) at -4.5 V (190 mΩ), gate charge (25–37 nC), thermal resistance (62.5 °C/W), body diode recovery (27–40 ns), and TSOP-6 footprint compatibility with space-constrained PCB layouts.

Technical Context

This device operates as a high-side load switch in DC-DC power path management, leveraging its negative threshold voltage (-1.0 to -3.0 V) and low gate charge to enable fast, efficient turn-on/turn-off with minimal drive loss. Its R_DS(on) remains stable across -55°C to +150°C junction temperature range, supporting reliable operation in thermally demanding environments.

The integrated body diode exhibits V_SD = -1.2 V at -2.0 A and reverse recovery time of 27–40 ns, enabling bidirectional current handling in synchronous rectification or reverse-polarity protection circuits without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for high-side switching in ≤36 V battery systems
R_DS(on) @ -10 V	112 mΩ - Enables ≤0.4 W conduction loss at -3.4 A, critical for thermal budget in compact designs
R_DS(on) @ -4.5 V	190 mΩ - Confirmed performance at logic-level gate drive, suitable for 3.3 V/5 V microcontroller control
Q_g	25–37 nC - Low total gate charge reduces driver power and switching transition time
R_θJA	62.5 °C/W - Thermal resistance measured on 1 in² Cu board; defines maximum ambient temperature for 2.0 W dissipation
t_r/t_f	550 ns / 50 ns - Fast rise/fall times support >100 kHz PWM operation with reduced switching loss
V_GS(th)	-1.0 to -3.0 V - Ensures robust turn-on margin with standard CMOS logic outputs

Pinout & Package

TSOP-6 surface-mount package with exposed drain pad for enhanced thermal performance; lead-free and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts -10 V or -4.5 V logic-level drive for full enhancement
2 (D)	Drain	Main current sink node; internally connected to exposed thermal pad for heat dissipation
3 (D)	Drain	Second drain connection; paralleled with Pin 2 to reduce package inductance and improve current sharing
4 (D)	Drain	Third drain connection; provides low-inductance path to PCB copper pour
5 (S)	Source	Reference node for gate drive and load return; tied to system ground in high-side configuration
6 (D)	Drain	Fourth drain connection; completes quad-drain layout for minimized R_DS(on) and thermal resistance

Key Features

Feature	Design Value
Ultra-low R_DS(on)	112 mΩ at -10 V enables ≥3× higher current density than SOT-23 equivalents in same PCB area
Low gate charge	25–37 nC minimizes driver IC stress and allows use of low-power GPIOs without buffer stages
TSOP-6 thermal design	Exposed drain pad and quad-drain terminals reduce thermal resistance by 60% vs. SOT-23
Body diode integration	V_SD = -1.2 V and t_rr = 27–40 ns support reverse-current handling in battery backup and polarity protection

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side load switch controlling battery-to-system power path with integrated body diode for fault current clamping.

Use Value: 190 mΩ R_DS(on) at -4.5 V ensures compatibility with USB PD controller gate drive while limiting voltage drop to <100 mV at 500 mA.

Use Scenario: Hot-swap control for USB-C ports delivering up to 20 V/5 A.

IC Role / Device Role / Timing Role: P-channel MOSFET used in back-to-back configuration for bidirectional overvoltage/overcurrent cutoff.

Use Value: 62.5 °C/W R_θJA and 2.0 W power rating allow sustained 3 A operation without heatsink on standard FR4.

Load Switch for IoT Sensor Node

Power Path Management in Wearables

Use Scenario: Controlled power-up of BLE radio and environmental sensors in energy-harvesting wearables.

IC Role / Device Role / Timing Role: Low-quiescent-current high-side switch enabling µA-level sleep mode isolation.

Use Value: Gate leakage <100 nA and V_GS(th) stability over temperature ensure no unintended turn-on during long-term storage.

Use Scenario: Seamless transition between battery and USB charging input in smart bands.

IC Role / Device Role / Timing Role: Load switch managing power source arbitration with automatic body-diode conduction during switchover.

Use Value: 27–40 ns t_rr and 34–50 nC Q_rr minimize cross-conduction loss and voltage glitch during source handoff.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3443DV	R_DS(on) = 120 mΩ @ -4.5 V; Q_g = 12 nC; SOT-23-6 package	Lower gate charge but higher R_DS(on) and 30% lower thermal capability (R_θJA = 85 °C/W)	Preferred where drive strength is limited and power dissipation <0.8 W
IRLTS6342TRPBF	R_DS(on) = 100 mΩ @ -4.5 V; TSOP-6; Q_g = 22 nC; V_GS(th) = -0.45 to -1.2 V	Lower threshold enables direct 3.3 V MCU drive but tighter V_GS(th) distribution increases risk of partial turn-on in noisy environments	Best for noise-immune 3.3 V systems requiring lowest possible R_DS(on) at logic level

Compared with Si3443DV and IRLTS6342TRPBF, IRF5803 offers balanced trade-offs: superior thermal performance over Si3443DV and more robust gate threshold margin than IRLTS6342TRPBF-making it optimal for industrial-grade battery management where reliability under temperature variation is critical.

Availability

IRF5803 is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, IoT sensor node load control, and wearable power path management requiring stable component supply and long-lifecycle availability.

Supply support for IRF5803 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon-based power devices.

The IRF5803 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC power switching in portable and battery-operated equipment.

FAQ

Is IRF5803 suitable for high-side switching with 3.3 V microcontroller drive?

Yes. With V_GS(th) ranging from -1.0 V to -3.0 V and R_DS(on) = 190 mΩ at V_GS = -4.5 V, IRF5803 achieves full enhancement using buffered 3.3 V logic or direct drive from 5 V GPIOs. Its gate threshold guarantees turn-on margin even with supply droop or noise.

What is the maximum continuous current at 70°C ambient?

At T_A = 70°C, the maximum continuous drain current is -2.7 A when V_GS = -10 V. This is derived from the linear derating factor of 16 mW/°C applied to the 2.0 W P_D rating at 25°C, ensuring safe operation within thermal limits on standard PCB layouts.

Does IRF5803 require an external flyback diode in inductive load applications?

No. The integrated body diode has V_SD = -1.2 V at -2.0 A and t_rr = 27–40 ns, making it suitable for freewheeling in low-energy inductive loads like small solenoids or relay coils. For high-dI/dt or high-energy loads, an external Schottky may still be recommended.

How does the TSOP-6 package improve thermal performance over SOT-23?

The TSOP-6 uses a customized lead frame with four drain pins and an exposed thermal pad, reducing R_θJA to 62.5 °C/W-60% lower than typical SOT-23 devices. This allows nearly 3× higher current handling (3.4 A vs. ~1.2 A) without heatsinking on identical PCB area.

IRF5803 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 112mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1110 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(TSOP-6)

IRF5803 FAQ

1.How can I place an order for IRF5803 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5803 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5803 reliable?

The price and inventory of IRF5803 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5803 is usually 5 days.

3.What payment methods are accepted for IRF5803?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5803 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5803?

IRF5803 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5803 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5803?

For technical support, including IRF5803 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5803 requirements.

6.How does Aetrix verify that IRF5803 is sourced from the original manufacturer or authorized distributors?

All IRF5803 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5803 meets industry standards.

7.What is the process for return or replacement of IRF5803?

All IRF5803 units undergo pre-shipment inspection (PSI). If there is an issue with IRF5803, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5803 part is unused and in its original packaging.

Return procedure for IRF5803:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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