Infineon Technologies IRF5803D2PBF

Overview

IRF5803D2PBF from Infineon Technologies is a co-packaged P-channel HEXFET MOSFET and low-forward-voltage Schottky diode in a single SO-8 package, rated for -40 V V(BR)DSS, 112 mΩ RDS(on) at -10 V VGS, and 0.51 V VF at 5 A for the Schottky section. It serves as a synchronous rectifier and high-side switch in buck regulator outputs for portable DC/DC converters.

For engineers reviewing the IRF5803D2PBF datasheet, IRF5803D2PBF pinout, IRF5803D2PBF application, or IRF5803D2PBF equivalent, key selection criteria include its integrated FET+Schottky topology, thermal resistance (RTJA = 62.5 °C/W), gate charge (Qg = 25–37 nC), body diode recovery (trr = 27–40 ns), and SO-8 leadframe-enhanced thermal performance.

Technical Context

This device integrates a logic-level-compatible P-channel MOSFET with a monolithic Schottky diode sharing source and drain terminals - enabling self-synchronous rectification without external timing control. The MOSFET features a negative threshold voltage (-1.0 to -3.0 V), low gate charge, and enhanced thermal path via modified SO-8 leadframe.

The Schottky diode delivers 0.51 V forward drop at 5 A and 25 °C, with reverse leakage under 3 mA at 40 V and 25 °C. Its junction capacitance (Ct = 405 pF at 5 V) and fast recovery (Qrr = 34–50 nC) support high-frequency switching up to 1 MHz in compact power stages.

Key Specifications

Pinout & Package

IRF5803D2PBF uses an enhanced thermal SO-8 package with exposed drain pads and customized leadframe for improved heat transfer. The package supports vapor phase, infrared, and wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar FET+Schottky integrated regulator applications.

Compared with Si7851DP-T1-GE3 and IRF7855TRPBF, IRF5803D2PBF offers optimal balance of 40 V robustness, 112 mΩ on-resistance, and 0.51 V Schottky VF - making it preferred for universal-input 5–20 V buck regulators where transient immunity and mid-load efficiency are critical.

Availability

IRF5803D2PBF is available at Aetrix Electronics and suitable for USB-C power adapters, smartphone PMICs, wireless charging transmitters, and industrial IoT sensor nodes requiring stable component supply and long-lifecycle support.

Supply support for IRF5803D2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The FETKY™ product line was developed to reduce board space and improve efficiency in high-frequency DC/DC converters - specifically targeting portable electronics and compact power supplies where discrete integration yields measurable thermal and layout advantages.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF5803D2PBF supports -2.7 A continuous drain current at TA = 70°C with VGS = -10 V, derated linearly from -3.4 A at 25°C using 16 mW/°C thermal slope. This reflects real-world thermal limits on standard PCB layouts without heatsinks.

Can the Schottky diode be used independently of the MOSFET?

No - the Schottky anode is internally bonded to the MOSFET drain, and the cathode to the MOSFET source. There is no isolation; both devices share terminals 1–4 (drain/anode) and 5–7 (source/cathode). Independent operation is physically impossible.

Is IRF5803D2PBF suitable for synchronous rectification in flyback converters?

It is not recommended for flyback secondary-side rectification due to its P-channel topology and lack of integrated gate driver timing control. Flyback designs typically require N-channel FETs with active gate drive synchronized to primary switch off-time - a role this part does not fulfill.

What is the safe operating area (SOA) limitation at 100 μs pulse width?

At 100 μs pulse width and TJ = 25°C, the IRF5803D2PBF SOA is limited by RDS(on) to approximately -12 A at -20 V VDS. This is derived from Fig 8 in the datasheet and accounts for single-pulse thermal constraints without secondary breakdown concerns typical of older MOSFETs.