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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5803D2TRPBF

Name: IRF5803D2TRPBF
Brand: Infineon Technologies
SKU: IRF5803D2TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5803D2TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF5803D2TRPBF.pdf

Description:: MOSFET P-CH 40V 3.4A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF5803D2TRPBF from Infineon Technologies is a co-packaged P-channel HEXFET^™ power MOSFET and low-forward-voltage Schottky diode in a single SO-8 package, rated for -40 V V_DSS, 112 mΩ R_DS(on) at -10 V V_GS, and 0.51 V Schottky V_F at 5 A. It serves as integrated high-side switch and freewheeling diode in synchronous buck regulators for portable electronics.

For engineers reviewing the IRF5803D2TRPBF datasheet, IRF5803D2TRPBF pinout, IRF5803D2TRPBF application, or IRF5803D2TRPBF equivalent, key selection criteria include verified co-package thermal coupling, body-diode reverse recovery performance (t_rr = 27 ns typ), gate charge (Q_g = 25 nC typ), and SO-8 leadframe-enhanced thermal resistance (R_thJA = 62.5 °C/W).

Technical Context

This FETKY^™ device integrates a logic-level-compatible P-channel MOSFET with a monolithic Schottky rectifier sharing common source and drain terminals. The MOSFET features enhanced trench-gate processing for low on-resistance per die area, while the Schottky exhibits minimal forward voltage (0.44 V at 5 A, 125 °C) and negligible reverse recovery charge (Q_rr = 34 nC typ).

Thermal design leverages a modified SO-8 leadframe optimized for vapor-phase and wave soldering, delivering improved junction-to-drain thermal resistance (R_thJL = 20 °C/W) versus standard SO-8. The co-packaged architecture eliminates PCB trace inductance between switch and diode, reducing switching losses and EMI in high-frequency DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-40 V - Maximum blocking voltage for high-side switch operation in 12–24 V input rails
R_DS(on)	112 mΩ @ V_GS = -10 V - Enables <1.2 W conduction loss at 3.4 A continuous drain current
Schottky V_F	0.51 V @ I_F = 5 A, 25 °C - Reduces freewheeling loss vs. silicon body diode by >50%
Q_g	25 nC typ - Supports efficient 500 kHz–1 MHz PWM switching with moderate gate drive strength
t_rr	27 ns typ - Eliminates reverse recovery tail current, critical for synchronous rectification stability
R_thJA	62.5 °C/W - Limits junction temperature rise to ≤94 °C at 2.0 W dissipation on 1-in² copper

Pinout & Package

IRF5803D2TRPBF uses a modified SO-8 surface-mount package with enhanced thermal leadframe. Pin numbering follows standard top-view orientation (pin 1 at top-left corner, counterclockwise).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	MOSFET Source / Schottky Anode	Common low-side reference node; connects to output inductor and load ground
5, 6, 7, 8	MOSFET Drain / Schottky Cathode	Shared high-side switching node; ties to input rail and inductor top
Gate (Pin 3 only)	MOSFET Gate Control	Logic-level compatible input requiring -10 V for full enhancement; isolated from diode terminals

Key Features

Feature	Design Value
Co-packaged MOSFET + Schottky	Eliminates interconnect inductance, enabling clean turn-off and reduced voltage overshoot in buck converters
Low R_DS(on) × Q_g figure-of-merit	2.8 mΩ·nC - Optimized trade-off between conduction and switching loss for portable power stages
Enhanced SO-8 thermal leadframe	Reduces R_thJA by ~15% vs. standard SO-8, supporting higher continuous current without heatsink
Body-diode-free Schottky integration	Replaces slow, lossy intrinsic MOSFET body diode with fast, low-V_F discrete-equivalent rectifier

Applications

Buck Regulator Power Stage

USB-C PD Portable Adapter

Use Scenario: Primary high-side switch and synchronous rectifier in 3–5 A, 500 kHz buck converter supplying FPGA core voltage.

IC Role / Device Role / Timing Role: Integrated P-MOSFET/Schottky pair functions as controlled switch and zero-recovery freewheeling path during low-side conduction phase.

Use Value: Achieves >92% efficiency at 3.3 V/3 A output due to combined R_DS(on) and V_F losses under 0.8 W total.

Use Scenario: Output stage in compact 20 W USB-C PD adapter with 5 V/3 A and 9 V/2.22 A profiles.

IC Role / Device Role / Timing Role: Serves as secondary-side synchronous rectifier and current-sense node for adaptive control loop feedback.

Use Value: Enables compliance with CoC Tier 2 efficiency requirements via sub-0.5 V forward drop across full operating temperature range.

Industrial IoT Sensor Node PSU

Medical Wearable Battery Charger

Use Scenario: Step-down regulator powering ultra-low-power MCU and BLE radio from 12 V industrial bus.

IC Role / Device Role / Timing Role: High-side switch with integrated Schottky provides regulated 3.3 V supply with minimal BOM count and footprint.

Use Value: Reduces board area by 35% vs. discrete MOSFET + diode solution while maintaining <10 μA quiescent current in shutdown mode.

Use Scenario: Isolated flyback secondary-side rectifier in Class II medical-grade wearable charger (5 V/1 A).

IC Role / Device Role / Timing Role: Replaces traditional Schottky array with single co-packaged device to meet creepage/clearance and thermal derating requirements.

Use Value: Delivers certified 100% load regulation across -20 to +60 °C ambient without thermal throttling or derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar co-packaged P-MOSFET/Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832TRPBF	R_DS(on) = 22 mΩ @ -10 V (lower), but no integrated Schottky; requires external diode	Higher efficiency at high current, but larger layout and added component cost	Select when maximum efficiency >95% is required and board space allows discrete diode placement
Si7851DP-T1-GE3	P-channel FET + Schottky, but V_DSS = -30 V and R_DS(on) = 150 mΩ @ -10 V	Limited to ≤12 V input rails; higher conduction loss at same current	Choose for cost-sensitive designs where 30 V rating suffices and thermal margin is adequate

Compared with IRF5803D2TRPBF, IRF7832TRPBF delivers lower R_DS(on) but increases design complexity and footprint, while Si7851DP-T1-GE3 trades voltage rating and on-resistance for lower unit cost-making IRF5803D2TRPBF optimal for balanced 24 V-input, space-constrained buck stages.

Availability

IRF5803D2TRPBF is available at Aetrix Electronics and suitable for buck regulator power stages, USB-C PD adapters, industrial IoT sensor node PSUs, and medical wearable battery chargers requiring stable component supply and lead-free compliance.

Supply support for IRF5803D2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with over 30 years of MOSFET innovation.

The FETKY^™ product line was engineered specifically for high-efficiency, space-constrained DC-DC conversion in portable and battery-powered systems, integrating complementary power devices to eliminate layout compromises.

FAQ

What is the maximum continuous drain current at 70°C case temperature?

The IRF5803D2TRPBF supports -2.7 A continuous drain current at T_A = 70°C with V_GS = -10 V. This rating accounts for thermal derating based on its 16 mW/°C linear derating factor and 1.3 W power dissipation limit at that temperature, ensuring safe operation without exceeding 150°C maximum junction temperature.

Can this device replace a discrete P-MOSFET and Schottky diode in an existing design?

Yes-IRF5803D2TRPBF is a direct functional replacement for discrete P-MOSFET + Schottky combinations in SO-8 footprints. Its pinout matches industry-standard dual-source/dual-drain layouts, and shared thermal mass improves reliability. No schematic changes are needed, though layout should maintain symmetric copper pour for both source and drain pads to preserve thermal balance.

What is the typical reverse recovery charge of the integrated Schottky diode?

The integrated Schottky diode has a typical reverse recovery charge (Q_rr) of 34 nC at T_J = 25°C, with di/dt = 100 A/μs. Unlike conventional MOSFET body diodes, this value reflects near-zero minority-carrier storage, enabling stable synchronous rectification without snubbers or dead-time tuning in high-frequency buck converters.

Does the device require negative gate drive voltage for full enhancement?

IRF5803D2TRPBF is a P-channel MOSFET with a gate threshold voltage (V_GS(th)) ranging from -1.0 V to -3.0 V. While it conducts partially at 0 V gate drive, full enhancement and minimum R_DS(on) require V_GS ≤ -4.5 V. For optimal performance, -10 V gate drive is recommended to achieve the specified 112 mΩ on-resistance at -3.4 A drain current.

IRF5803D2TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 112mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1110 pF @ 25 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF5803D2TRPBF FAQ

1.How can I place an order for IRF5803D2TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5803D2TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5803D2TRPBF reliable?

The price and inventory of IRF5803D2TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5803D2TRPBF is usually 5 days.

3.What payment methods are accepted for IRF5803D2TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5803D2TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5803D2TRPBF?

IRF5803D2TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5803D2TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5803D2TRPBF?

For technical support, including IRF5803D2TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5803D2TRPBF requirements.

6.How does Aetrix verify that IRF5803D2TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF5803D2TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5803D2TRPBF meets industry standards.

7.What is the process for return or replacement of IRF5803D2TRPBF?

All IRF5803D2TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5803D2TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5803D2TRPBF part is unused and in its original packaging.

Return procedure for IRF5803D2TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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