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Infineon Technologies IRF5803TR
- Part No.:
- IRF5803TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
IRF5803TR.pdf
- Description:
- MOSFET P-CH 40V 3.4A MICRO6
- Quantity:
- Payment:
- Shipping:
Inventory:9,318
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Product details
Overview
IRF5803TR from Infineon is a P-channel enhancement-mode HEXFET® Power MOSFET in TSOP-6 package, rated for -40 V VDS, 112 mΩ RDS(on) at VGS = -10 V and -3.4 A continuous drain current, optimized for high-efficiency load switching in portable battery-powered systems.
For engineers reviewing the IRF5803TR datasheet, IRF5803TR pinout, IRF5803TR application, or IRF5803TR equivalent, key selection criteria include its ultra-low on-resistance in compact surface-mount form, gate charge of 25 nC (typ), thermal resistance of 62.5 °C/W, and body diode recovery time of 27 ns (typ) - all critical for synchronous buck, power OR-ing, and hot-swap designs.
Technical Context
This device operates as a single P-channel silicon-based power switch with depletion-free channel formation, requiring negative gate drive relative to source. Its low RDS(on) and 25 nC total gate charge enable fast switching with reduced conduction and switching losses in DC-DC converter high-side configurations.
The TSOP-6 package integrates a customized lead frame that reduces thermal resistance by optimizing copper path geometry and die attach, delivering 300% higher current capability than SOT-23 equivalents while maintaining footprint compatibility with space-constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage for high-side load switch or reverse-polarity protection circuits |
| RDS(on) | 112 mΩ @ VGS = -10 V, ID = -3.4 A - Enables <1.2 W conduction loss at full rated current |
| ID (continuous) | -3.4 A @ TA = 25°C - Supports sustained load currents up to 3.4 A without heatsink in standard FR4 layout |
| Qg | 25 nC (typ) - Reduces gate driver power demand and enables >1 MHz switching in compact converters |
| trr | 27 ns (typ) - Minimizes body diode reverse recovery loss during synchronous rectification |
| RθJA | 62.5 °C/W - Specifies junction-to-ambient thermal resistance on 1 in² Cu board, defining safe operating area limits |
Pinout & Package
TSOP-6 surface-mount package with exposed drain pad for enhanced thermal performance; standardized 1.6 mm × 2.9 mm footprint and 0.95 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires -10 V to fully enhance; gate threshold -1.0 to -3.0 V |
| 2 (D) | Drain | Main current output node; internally connected to exposed thermal pad; common to pins 3, 4, 5 |
| 3 (D) | Drain | Parallel drain connection for lower inductance and improved current sharing |
| 4 (D) | Drain | Third parallel drain terminal; enhances thermal dissipation via multiple copper paths |
| 5 (D) | Drain | Fourth drain terminal; forms low-inductance return path for high-frequency switching |
| 6 (S) | Source | Reference node for gate drive; connects to system ground or positive rail in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 112 mΩ at -10 V gate drive - cuts conduction loss by >40% vs. comparable SOT-23 P-MOSFETs |
| Low gate charge | 25 nC typical - reduces driver IC stress and enables efficient operation at 500 kHz–1 MHz |
| Optimized thermal design | 62.5 °C/W RθJA on 1 in² Cu - allows 2.0 W continuous dissipation without external heatsink |
| Lead-free & halogen-free | RoHS-compliant construction - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) |
Applications
| Battery Protection Circuit | Hot-Swap Controller |
|---|---|
Use Scenario: Preventing reverse-current flow and over-discharge in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel MOSFET used as active reverse-polarity and over-current cutoff switch. Use Value: 112 mΩ RDS(on) limits voltage drop to <380 mV at 3.4 A, preserving battery runtime and enabling precise current sensing. | Use Scenario: Safe insertion and removal of line cards in telecom and server backplanes. IC Role / Device Role / Timing Role: Inrush current limiter and fault-isolation switch controlled by dedicated hot-swap controller. Use Value: Low Qg (25 nC) supports fast turn-on/turn-off timing for accurate current limiting and fault response under 100 µs. |
| Synchronous Buck Converter High-Side Switch | Power OR-ing Diode Replacement |
Use Scenario: High-efficiency 3.3 V or 5 V point-of-load regulation from 12 V input in embedded systems. IC Role / Device Role / Timing Role: High-side P-channel switch in non-synchronous or pseudo-synchronous buck topology. Use Value: 27 ns trr minimizes shoot-through risk and body diode conduction loss during dead-time intervals. | Use Scenario: Redundant power supply combining in industrial PLCs and network switches. IC Role / Device Role / Timing Role: Active OR-ing element replacing Schottky diodes to reduce forward voltage drop and heat generation. Use Value: -1.2 V VSD at -2.0 A enables >85% efficiency improvement over 0.4 V Schottky diode at same current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI3443DV | RDS(on) = 120 mΩ @ -4.5 V; Qg = 18 nC; SOT-23-6 package | Lower gate drive voltage compatibility but higher on-resistance and smaller thermal mass | Preferred where -4.5 V logic-level drive is mandatory and power density is secondary |
| IRLTS2242TRPBF | RDS(on) = 90 mΩ @ -4.5 V; Qg = 21 nC; TSOP-6 package; 100% RDS(on) tested | Superior low-voltage drive performance and tighter RDS(on) distribution, but higher cost | Best for designs requiring guaranteed -4.5 V turn-on with minimal margin and production traceability |
Compared with SI3443DV and IRLTS2242TRPBF, IRF5803TR delivers optimal balance of -10 V drive robustness, thermal capability, and cost for mid-power battery management - offering 60% lower RDS(on) than SOT-23 alternatives while retaining TSOP-6 manufacturability.
Availability
IRF5803TR is available at Aetrix Electronics and suitable for battery protection circuits, hot-swap controllers, synchronous buck high-side switches, and power OR-ing applications requiring stable component supply across automotive infotainment, industrial IoT edge nodes, and portable medical devices.
Supply support for IRF5803TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The HEXFET® Power MOSFET product line targets high-efficiency power conversion and intelligent load switching, emphasizing low RDS(on), fast switching, and thermally robust packaging for space- and energy-constrained systems.
FAQ
What is the maximum continuous drain current for IRF5803TR at 70°C ambient temperature?
The maximum continuous drain current is -2.7 A at TA = 70°C with VGS = -10 V, derated linearly at 16 mW/°C above 25°C ambient. This reflects thermal limitations of the TSOP-6 package on standard PCB layouts, not intrinsic silicon capability.
Can IRF5803TR be driven directly from a 3.3 V microcontroller GPIO?
No - its gate threshold voltage ranges from -1.0 V to -3.0 V, and full enhancement requires -10 V for specified RDS(on). At -3.3 V, RDS(on) exceeds 400 mΩ, causing excessive conduction loss; a dedicated gate driver or level-shifter is required for reliable operation.
Does IRF5803TR include an integrated body diode, and what are its characteristics?
Yes - it features an integral p-n junction body diode with VSD = -1.2 V at -2.0 A and TJ = 25°C, reverse recovery time trr = 27 ns (typ), and Qrr = 34 nC (typ). These values are measured with di/dt = 100 A/µs and define its suitability for synchronous rectification.
What is the moisture sensitivity level (MSL) and reflow profile compliance for IRF5803TR?
IRF5803TR is rated MSL1 per IPC/JEDEC J-STD-020, meaning it is not moisture-sensitive and may be stored indefinitely at ≤30°C/60% RH without baking. It supports standard lead-free reflow profiles with peak temperature up to 260°C and time above liquidus ≤60 seconds.
IRF5803TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 112mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 37 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1110 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro6™(TSOP-6)
IRF5803TR FAQ
1.How can I place an order for IRF5803TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF5803TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF5803TR reliable?
The price and inventory of IRF5803TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5803TR is usually 5 days.
3.What payment methods are accepted for IRF5803TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5803TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF5803TR?
IRF5803TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF5803TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF5803TR?
For technical support, including IRF5803TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5803TR requirements.
6.How does Aetrix verify that IRF5803TR is sourced from the original manufacturer or authorized distributors?
All IRF5803TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5803TR meets industry standards.
7.What is the process for return or replacement of IRF5803TR?
All IRF5803TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF5803TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF5803TR part is unused and in its original packaging.
Return procedure for IRF5803TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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