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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5804TRPBF

Name: IRF5804TRPBF
Brand: Infineon Technologies
SKU: IRF5804TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5804TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: IRF5804TRPBF.pdf

Description:: MOSFET P-CH 40V 2.5A MICRO6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF5804TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET power MOSFET in TSOP-6 package, rated for -40 V V_DS, 198 mΩ R_DS(on) at V_GS = -10 V and I_D = -2.5 A, with 2.0 W power dissipation at T_A = 25°C. It serves as a high-efficiency load switch in portable battery-powered systems requiring low on-resistance and compact footprint.

For engineers reviewing the IRF5804TRPBF datasheet, IRF5804TRPBF pinout, IRF5804TRPBF application, or IRF5804TRPBF equivalent, key selection criteria include verified P-channel logic-level gate drive compatibility, body diode reverse recovery performance (t_rr = 24–36 ns), thermal resistance (R_θJA = 62.5°C/W), and TSOP-6 package current-handling advantage over SOT-23.

Technical Context

This device operates as a single P-channel power switch with gate threshold voltage (V_GS(th)) between -1.0 V and -3.0 V, enabling direct interface with 3.3 V or 5 V microcontroller GPIOs. Its ultra-low R_DS(on) is achieved via advanced silicon processing and optimized TSOP-6 leadframe design.

The integrated body diode supports synchronous rectification and reverse polarity protection, with V_SD = -1.2 V at I_S = -2.0 A and T_J = 25°C. Switching parameters-including Q_g = 5.7 nC (typ), t_r = 430 ns, and t_f = 64 ns-are specified under standardized test conditions (V_DD = -20 V, R_G = 6.0 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum drain-to-source blocking voltage for battery disconnect and reverse polarity protection circuits
R_DS(on)	198 mΩ @ V_GS = -10 V, I_D = -2.5 A - Enables <100 mW conduction loss at 2.5 A, critical for portable thermal budget
I_D (25°C)	-2.5 A continuous - Supports typical load-switching requirements in USB-C PD, PMIC, and smart battery packs
Q_g	5.7 nC (typ) - Low gate charge reduces driver power and enables fast turn-on with minimal gate resistor
R_θJA	62.5°C/W - Defines thermal derating slope (16 mW/°C) when mounted on 1-in² copper PCB
t_rr	24–36 ns - Confirmed body diode recovery speed suitable for moderate-frequency DC-DC secondary-side switching
V_GS(th)	-1.0 to -3.0 V - Ensures reliable turn-on with standard 3.3 V logic without level-shifting circuitry

Pinout & Package

IRF5804TRPBF is housed in a surface-mount TSOP-6 package with exposed drain pad for enhanced thermal performance. The package measures 2.9 mm × 1.6 mm × 1.0 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1 (D)	Drain	Main high-side current path; internally connected to exposed thermal pad for heat sinking
2 (G)	Gate	Control input; requires ≤±20 V drive; low Q_g enables efficient PWM control
3 (S)	Source	Reference node for gate drive; tied to system ground or battery positive in high-side configuration
4 (D)	Drain	Parallel drain connection; improves current sharing and thermal spreading
5 (D)	Drain	Third drain terminal; enhances package R_DS(on) and thermal resistance reduction vs. SOT-23
6 (D)	Drain	Fourth drain terminal; provides low-inductance path to PCB copper pour

Key Features

Feature	Design Value
Ultra-low R_DS(on)	198 mΩ @ -10 V - 60% lower than comparable SOT-23 P-MOSFETs, reducing conduction loss in space-constrained designs
TSOP-6 package	2.9 × 1.6 mm footprint - Saves >50% board area vs. SO-8 while supporting near-3× higher current density
Logic-level gate	V_GS(th) down to -1.0 V - Directly drivable by 3.3 V MCUs without external level shifters or gate drivers
Low Q_g	5.7 nC typ - Minimizes gate drive power and enables faster switching transitions in battery management ICs
Lead-free/halogen-free	RoHS-compliant construction - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard assembly

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse polarity and overcurrent protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-MOSFET acting as active disconnect switch controlled by battery management IC.

Use Value: 198 mΩ R_DS(on) limits voltage drop to <500 mV at 2.5 A, preserving battery runtime and thermal margin.

Use Scenario: VBUS enable/disable control in USB-C receptacle designs compliant with USB PD 3.0.

IC Role / Device Role / Timing Role: Load switch isolating downstream port electronics during fault or negotiation phases.

Use Value: Verified 24–36 ns body diode reverse recovery ensures clean VBUS ramp-up without bus contention or overshoot.

Smartphone Power Management

Industrial Sensor Node Supply

Use Scenario: Dynamic power rail gating for camera modules, displays, or RF subsystems in mobile SoC platforms.

IC Role / Device Role / Timing Role: Low-quiescent-current load switch responding to PMIC-controlled GPIO signals.

Use Value: 5.7 nC total gate charge enables sub-1 µs turn-on with standard 10 kΩ pull-up, meeting fast wake-up timing budgets.

Use Scenario: Remote sensor node with intermittent operation powered by coin cell or energy harvesting.

IC Role / Device Role / Timing Role: Ultra-low-leakage power switch enabling <1 µA shutdown current when inactive.

Use Value: IDSS <100 nA at V_DS = -32 V ensures multi-year shelf life without battery drain in always-off states.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2305DS-T1-GE3	R_DS(on) = 55 mΩ @ -4.5 V (lower), but V_DS = -30 V (reduced blocking capability)	Better suited for 3.3 V logic-driven 30 V systems; less robust for 40 V automotive transients	Select if gate drive is limited to -4.5 V and system V_IN ≤ 30 V
DMG2305UVT-7	R_DS(on) = 48 mΩ @ -4.5 V, but Q_g = 8.5 nC (higher), and R_θJA = 125°C/W (worse thermal performance)	Higher switching losses and thermal derating limit use in sustained 2 A loads	Select only for low-duty-cycle, low-current (<1 A) applications where footprint is primary constraint

Compared with Si2305DS-T1-GE3 and DMG2305UVT-7, IRF5804TRPBF offers optimal balance of -40 V rating, 198 mΩ on-resistance at -10 V, and 62.5°C/W thermal resistance-making it preferred for 2.5 A battery-switching applications demanding both voltage headroom and thermal reliability.

Availability

IRF5804TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, smartphone power management subsystems, and industrial sensor node supply gating requiring stable component supply and long-term lifecycle support.

Supply support for IRF5804TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with emphasis on energy efficiency and system reliability.

The IRF5804TRPBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered specifically for high-density, low-voltage load switching in portable and battery-operated equipment where board space and thermal performance are critical constraints.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF5804TRPBF supports -2.0 A continuous drain current at T_A = 70°C with V_GS = -10 V, as specified in the Absolute Maximum Ratings table. This reflects linear derating from 2.5 A at 25°C using the 16 mW/°C factor, consistent with its 62.5°C/W junction-to-ambient thermal resistance and 2.0 W power limit at 25°C.

Does IRF5804TRPBF have a built-in body diode, and what are its key parameters?

Yes, IRF5804TRPBF integrates a monolithic p-n junction body diode with V_SD = -1.2 V at I_S = -2.0 A and T_J = 25°C. Its reverse recovery time is 24–36 ns (t_rr) and reverse recovery charge is 32–49 nC (Q_rr) under di/dt = -100 A/µs, enabling use in flyback and synchronous rectifier topologies up to ~500 kHz.

Can IRF5804TRPBF be driven directly by a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage range (-1.0 V to -3.0 V) and low gate charge (5.7 nC typ) allow full enhancement with 3.3 V logic levels. At V_GS = -3.3 V, R_DS(on) rises to ~334 mΩ (per datasheet), still sufficient for ≤1 A loads; for 2.5 A operation, -10 V drive is required per specification.

What is the recommended PCB layout practice for thermal management?

Mount IRF5804TRPBF on ≥1 in² of 1 oz copper connected to all four drain pins (1, 4, 5, 6) via multiple thermal vias to inner/ground planes. Avoid solder mask over drain pads. Use 0.5 mm diameter vias spaced ≤1.5 mm apart under the exposed drain tab to achieve effective R_θJA close to the specified 62.5°C/W.

IRF5804TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 198mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(TSOP-6)

IRF5804TRPBF FAQ

1.How can I place an order for IRF5804TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5804TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5804TRPBF reliable?

The price and inventory of IRF5804TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5804TRPBF is usually 5 days.

3.What payment methods are accepted for IRF5804TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5804TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5804TRPBF?

IRF5804TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5804TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5804TRPBF?

For technical support, including IRF5804TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5804TRPBF requirements.

6.How does Aetrix verify that IRF5804TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF5804TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5804TRPBF meets industry standards.

7.What is the process for return or replacement of IRF5804TRPBF?

All IRF5804TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5804TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5804TRPBF part is unused and in its original packaging.

Return procedure for IRF5804TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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