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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5805

Name: IRF5805
Brand: Infineon Technologies
SKU: IRF5805
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5805

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: IRF5805.pdf

Description:: MOSFET P-CH 30V 3.8A MICRO6

Quantity:: RFQ Add To RFQ list

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Inventory:2,688

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Product details

Overview

IRF5805 from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TSOP-6 package, rated for -30 V V_DS, 0.098 Ω R_DS(on) at V_GS = -10 V and I_D = -3.8 A, with ultra-low gate charge (Q_g = 11–17 nC). It serves as a high-efficiency load switch in portable battery-powered systems requiring compact, low-loss power control.

For engineers reviewing the IRF5805 datasheet, IRF5805 pinout, IRF5805 application, or IRF5805 equivalent, key selection criteria include its -30 V breakdown voltage, 0.098 Ω on-resistance at -10 V gate drive, TSOP-6 thermal performance (R_θJA = 62.5 °C/W), body diode reverse recovery (t_rr = 19–29 ns), and suitability for high-side load switching in space-constrained DC-DC and battery protection circuits.

Technical Context

This device operates as a normally-off P-channel MOSFET with gate threshold voltage (V_GS(th)) between -1.0 V and -2.5 V, enabling robust turn-on with standard logic-level negative gate drive. Its low R_DS(on) and optimized gate charge support fast switching in synchronous buck converters and hot-swap controllers.

The integrated body diode exhibits V_SD = -1.2 V at I_S = -2.0 A and t_rr = 19–29 ns, supporting bidirectional current handling in back-to-back configurations. Thermal design leverages the TSOP-6's enhanced copper leadframe, delivering 300% higher current capability than SOT-23 equivalents under identical PCB conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications.
R_DS(on) @ V_GS = -10 V	0.098 Ω - Enables ≤ 1.4 W conduction loss at -3.8 A continuous drain current on 1-in² Cu board.
Q_g	11–17 nC - Reduces gate drive power and enables <100 ns typical switching transitions in PWM load switches.
t_rr	19–29 ns - Limits shoot-through risk and EMI in bidirectional or synchronous rectifier topologies.
R_θJA	62.5 °C/W - Specifies junction-to-ambient thermal resistance for surface-mount layout on standard FR-4 with 1-in² copper pour.
I_D @ T_A = 25°C	-3.8 A - Continuous drain current rating with adequate heatsinking; derates linearly to -3.0 A at 70°C ambient.
V_GS(th)	-1.0 to -2.5 V - Ensures reliable turn-on with -3.3 V or -5 V logic-compatible gate drivers.

Pinout & Package

IRF5805 is housed in a thermally enhanced TSOP-6 surface-mount package with exposed drain pads for improved heat dissipation. The package measures 2.9 mm × 1.6 mm × 0.95 mm and supports automated placement and reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Five parallel drain terminals connected internally to the MOSFET channel and exposed thermal pad - primary current path and heat sink interface.
6	Source (S)	Source terminal for return path; referenced to system ground in high-side switch configurations.
G	Gate (G)	Control input; requires negative voltage relative to source to turn on; low Q_g minimizes driver loading.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.098 Ω @ -10 V - Reduces conduction losses by >60% versus comparable SOT-23 P-MOSFETs, extending battery runtime.
TSOP-6 thermal architecture	62.5 °C/W R_θJA - Delivers 3× higher current density than SOT-23 without external heatsink or airflow.
Low gate charge	11–17 nC total - Enables efficient driving from microcontroller GPIO or low-power gate drivers in portable designs.
Lead-free & halogen-free	RoHS-compliant construction - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life.
Fast body diode	t_rr = 19–29 ns - Supports high-frequency freewheeling in synchronous rectification and reverse-polarity protection.

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-MOSFET load switch controlled by battery management IC to isolate cell during fault conditions.

Use Value: 0.098 Ω R_DS(on) limits voltage drop to <0.4 V at 3.8 A, preserving usable capacity and minimizing thermal rise.

Use Scenario: Hot-swap and overvoltage protection in USB-C PD 3.0 power path controllers.

IC Role / Device Role / Timing Role: Bidirectional load switch managing 5–20 V input rails with fast fault response and low insertion loss.

Use Value: 19–29 ns reverse recovery time prevents latch-up during dynamic bus voltage transients and ensures clean disconnect timing.

Industrial Sensor Node Power Gate

Automotive Body Control Module

Use Scenario: Controlled power sequencing for low-power wireless sensor nodes operating from coin-cell or energy-harvested sources.

IC Role / Device Role / Timing Role: Low-quiescent-load enable switch isolating peripherals until wake-up event occurs.

Use Value: -2.5 V V_GS(th) max allows full turn-on with -3.3 V logic, eliminating need for level-shifting circuitry.

Use Scenario: Localized power distribution for interior lighting, door locks, and HVAC actuators in 12 V vehicle networks.

IC Role / Device Role / Timing Role: High-side switch driven by CAN/LIN microcontroller GPIO to manage localized loads.

Use Value: TSOP-6 footprint saves >40% PCB area versus SO-8 alternatives while maintaining -30 V surge tolerance per ISO 7637-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2305DS	R_DS(on) = 0.055 Ω @ -4.5 V but rated only to -20 V V_DS; lower Q_g (6.5 nC).	Limited to 5–12 V systems; insufficient for 24 V industrial or automotive transients.	Select when gate drive is constrained to -4.5 V and bus voltage stays ≤20 V.
DMG2305UVT	R_DS(on) = 0.052 Ω @ -4.5 V, V_DS = -20 V, SOT-23 package, R_θJA = 150 °C/W.	Higher thermal resistance limits continuous current to ~1.5 A on standard PCB; no TSOP-6 thermal advantage.	Choose only for cost-sensitive, low-current (<2 A), non-thermal-critical applications where space permits larger thermal margin.

Compared with Si2305DS and DMG2305UVT, IRF5805 uniquely balances -30 V ruggedness, 0.098 Ω on-resistance at -10 V, and TSOP-6 thermal efficiency-making it optimal for 12–24 V battery management and industrial load switching where both voltage margin and power density matter.

Availability

IRF5805 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, industrial sensor node power gates, and automotive body control modules requiring stable component supply across extended production lifecycles.

Supply support for IRF5805 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and wide-bandgap technologies.

The IRF5805 belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC power control in portable and automotive applications where low R_DS(on) and fast switching are critical.

FAQ

Can IRF5805 be driven directly from a 3.3 V microcontroller GPIO?

No. As a P-channel MOSFET, IRF5805 requires a gate voltage *lower* than its source to turn on. With source tied to V_IN (e.g., 12 V), a 3.3 V GPIO cannot pull gate sufficiently negative. A dedicated gate driver or level-shifting circuit generating ≥−8 V relative to source is required for full enhancement.

What is the maximum safe continuous drain current at 60°C ambient temperature?

Per the linear derating factor of 0.02 W/°C and P_D = 2 W at 25°C, power dissipation at 60°C ambient is 2 W − (0.02 W/°C × 35°C) = 1.3 W. Using R_DS(on) = 0.098 Ω, maximum continuous I_D ≈ √(1.3 W / 0.098 Ω) ≈ 3.6 A - assuming adequate PCB copper area and no additional airflow.

Does IRF5805 include an integrated ESD protection diode on the gate?

Yes. The device features built-in gate oxide protection with ±20 V absolute maximum V_GS rating and gate leakage limited to ±100 nA at ±20 V, meeting HBM ESD Class 1C (≥1 kV) per JEDEC JESD22-A114 without external components.

How does the TSOP-6 package improve thermal performance over SOT-23?

The TSOP-6 uses a custom copper leadframe with five drain pins and an exposed thermal pad, reducing R_θJA to 62.5 °C/W versus ~150 °C/W for SOT-23. This allows nearly 3× higher continuous current (3.8 A vs ~1.3 A) on identical 1-in² PCB copper, verified in Infineon's thermal characterization data.

IRF5805 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 98mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 511 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(TSOP-6)

IRF5805 FAQ

1.How can I place an order for IRF5805 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5805 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5805 reliable?

The price and inventory of IRF5805 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5805 is usually 5 days.

3.What payment methods are accepted for IRF5805?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5805 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5805?

IRF5805 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5805 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5805?

For technical support, including IRF5805 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5805 requirements.

6.How does Aetrix verify that IRF5805 is sourced from the original manufacturer or authorized distributors?

All IRF5805 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5805 meets industry standards.

7.What is the process for return or replacement of IRF5805?

All IRF5805 units undergo pre-shipment inspection (PSI). If there is an issue with IRF5805, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5805 part is unused and in its original packaging.

Return procedure for IRF5805:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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