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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5805TR

Name: IRF5805TR
Brand: Infineon Technologies
SKU: IRF5805TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5805TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: IRF5805TR.pdf

Description:: MOSFET P-CH 30V 3.8A MICRO6

Quantity:: RFQ Add To RFQ list

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Inventory:4,798

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Product details

Overview

IRF5805TR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TSOP-6 package, rated for -30 V V_DS, 0.098 Ω R_DS(on) at V_GS = -10 V and I_D = -3.8 A, with ultra-low gate charge (Q_g = 11–17 nC) and optimized for high-efficiency load switching in space-constrained battery-powered systems.

For engineers reviewing the IRF5805TR datasheet, IRF5805TR pinout, IRF5805TR application, or IRF5805TR equivalent, key selection criteria include its -30 V breakdown voltage, 0.098 Ω on-resistance at -10 V gate drive, TSOP-6 thermal performance (R_θJA = 62.5 °C/W), body diode reverse recovery (t_rr = 19–29 ns), and suitability for low-voltage DC-DC load switches and power OR-ing circuits.

Technical Context

This device operates as a single P-channel power switch with depletion-free channel formation, requiring negative gate-to-source bias for conduction. Its R_DS(on) exhibits strong V_GS dependence-0.165 Ω at -4.5 V and 0.098 Ω at -10 V-enabling flexible gate drive design across 3.3 V and 5 V logic systems.

The integrated body diode supports bidirectional current flow in back-to-back configurations, with V_SD = -1.2 V at -2.0 A and t_rr = 19–29 ns under standardized conditions (dI/dt = -100 A/µs), making it suitable for synchronous rectification and reverse polarity protection where fast diode recovery is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 24 V automotive/battery systems.
R_DS(on) @ V_GS = -10 V	0.098 Ω - On-resistance at full gate drive; enables <100 mW conduction loss at 3.8 A continuous current.
I_D @ T_A = 25°C	-3.8 A - Continuous drain current rating at room ambient; usable up to 70°C derated to -3.0 A.
Q_g	11–17 nC - Total gate charge; determines required gate driver current and switching energy in PWM applications.
R_θJA	62.5 °C/W - Junction-to-ambient thermal resistance on 1-in² copper board; sets maximum power dissipation limit (2 W at 25°C).
t_rr	19–29 ns - Body diode reverse recovery time; limits switching losses and EMI in high-frequency load switching.

Pinout & Package

IRF5805TR is housed in a surface-mount TSOP-6 package with exposed drain pads for enhanced thermal performance and compact PCB footprint. The leadframe design reduces R_DS(on) by 60% versus SOT-23 equivalents while enabling ~300% higher current handling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Five parallel drain terminals connected internally; provide low-inductance, high-current path and primary heat-sinking interface.
6	Source (S)	Source terminal; referenced ground node in high-side switch configurations and return path for load current.
G	Gate (G)	Control input; requires negative V_GS relative to source to turn on; sensitive to ESD (±20 V max rating).

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.098 Ω at -10 V gate drive enables <150 mW conduction loss at 4 A, reducing thermal stress in portable power rails.
Low Q_g and Q_gd	11–17 nC total gate charge and 1.5 nC Miller charge minimize switching losses and simplify gate driver sizing.
Optimized body diode	19–29 ns t_rr and -1.2 V V_SD support efficient reverse current handling in OR-ing and hot-swap circuits.
TSOP-6 thermal design	Exposed drain pad and custom leadframe deliver 62.5 °C/W R_θJA, outperforming SOT-23 in both power density and thermal reliability.

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse polarity and overcurrent protection in Li-ion battery packs using back-to-back MOSFET configuration.

IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side load switch with integrated body diode enabling bidirectional fault current blocking.

Use Value: 0.098 Ω R_DS(on) minimizes voltage drop across protection FET, preserving battery runtime and enabling accurate current sensing.

Use Scenario: USB-C port power path control for 5 V/3 A delivery with automatic direction detection and short-circuit isolation.

IC Role / Device Role / Timing Role: Low-side or high-side load switch managing VBUS connection between source and sink, controlled by USB PD controller.

Use Value: Fast 19–29 ns body diode recovery prevents shoot-through during dynamic load transitions and improves system robustness.

Industrial Sensor Node Power Rail

Automotive Body Control Module

Use Scenario: Local 3.3 V or 5 V rail enable/disable in wireless sensor nodes to extend battery life during sleep mode.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as precision ON/OFF switch for microcontroller peripherals and RF transceivers.

Use Value: 11–17 nC Q_g allows clean, fast turn-on/off with minimal gate driver overhead-critical for low-duty-cycle operation.

Use Scenario: Load switching for interior lighting, door locks, and window motors in 12 V vehicle subsystems.

IC Role / Device Role / Timing Role: High-reliability P-channel switch replacing mechanical relays, driven by 5 V microcontroller GPIO with level-shifting.

Use Value: -30 V V_DS rating accommodates automotive load dump transients up to ±25 V, ensuring long-term field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2305DS-T1-E3	R_DS(on) = 0.055 Ω @ -4.5 V (lower), but V_DS = -20 V (reduced voltage margin)	Suitable only for ≤12 V systems; not recommended for automotive load dump environments	Select when gate drive is limited to 3.3 V/4.5 V and voltage stress is below 20 V.
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V, Q_g = 10.5 nC (slightly lower), but R_θJA = 110 °C/W (worse thermal performance)	Higher junction temperature rise under same load; requires larger copper area or forced cooling	Prefer for ultra-low-loss 3.3 V logic-driven switches where board space permits thermal relief.

Compared with Si2305DS-T1-E3 and DMG2305UVT-7, IRF5805TR offers superior voltage margin (-30 V), balanced R_DS(on)/Q_g trade-off, and best-in-class thermal resistance (62.5 °C/W), making it optimal for industrial and automotive 12–24 V load switching where reliability and thermal headroom are critical.

Availability

IRF5805TR is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, industrial sensor nodes, and automotive body control units requiring stable component supply and long-lifecycle support.

Supply support for IRF5805TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and wide-bandgap technologies.

The IRF5805TR belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC load switching in battery-powered and automotive applications.

FAQ

Is IRF5805TR suitable for 3.3 V logic-level gate drive?

No-IRF5805TR is not a logic-level MOSFET. Its R_DS(on) is specified at V_GS = -4.5 V (0.165 Ω) and -10 V (0.098 Ω). At -3.3 V, R_DS(on) rises significantly (>0.3 Ω), increasing conduction loss. A dedicated gate driver or level shifter is required for reliable operation with 3.3 V controllers.

What is the maximum continuous drain current at 85°C ambient?

At T_A = 85°C, the device's continuous drain current is derated linearly from -3.8 A at 25°C using the 0.02 W/°C derating factor. With P_D = 1.28 W at 70°C, maximum I_D at 85°C is approximately -2.4 A, assuming R_DS(on) remains stable and PCB thermal design meets datasheet test conditions.

Can IRF5805TR be used in parallel with identical units?

Yes-its positive temperature coefficient of R_DS(on) (see Fig 4) ensures inherent current sharing when paralleled. However, matched gate drive layout, symmetrical PCB routing, and individual gate resistors are essential to avoid oscillation and ensure balanced switching behavior across devices.

Does IRF5805TR have avalanche rating or SOA data?

No-IRF5805TR is not rated for repetitive avalanche operation. The datasheet provides a Safe Operating Area (SOA) curve (Fig 8) for single-pulse conditions only, limiting operation to V_DS × I_D ≤ 2 W at DC, with pulse width constraints. Avalanche energy testing or ruggedness claims are not specified.

IRF5805TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 98mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 511 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(TSOP-6)

IRF5805TR FAQ

1.How can I place an order for IRF5805TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5805TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5805TR reliable?

The price and inventory of IRF5805TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5805TR is usually 5 days.

3.What payment methods are accepted for IRF5805TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5805TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5805TR?

IRF5805TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5805TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5805TR?

For technical support, including IRF5805TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5805TR requirements.

6.How does Aetrix verify that IRF5805TR is sourced from the original manufacturer or authorized distributors?

All IRF5805TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5805TR meets industry standards.

7.What is the process for return or replacement of IRF5805TR?

All IRF5805TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF5805TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5805TR part is unused and in its original packaging.

Return procedure for IRF5805TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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