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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5805TRPBF

Name: IRF5805TRPBF
Brand: Infineon Technologies
SKU: IRF5805TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5805TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: IRF5805TRPBF.pdf

Description:: MOSFET P-CH 30V 3.8A MICRO6

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Product details

Overview

IRF5805TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TSOP-6 package, rated for -30 V V_DS, 0.098 Ω R_DS(on) at V_GS = -10 V and I_D = -3.8 A, with ultra-low gate charge (Q_g = 11–17 nC). It serves as a high-efficiency load switch in portable battery-powered systems requiring compact, low-loss power control.

For engineers reviewing the IRF5805TRPBF datasheet, IRF5805TRPBF pinout, IRF5805TRPBF application, or IRF5805TRPBF equivalent, key selection criteria include its -30 V breakdown voltage, 0.098 Ω on-resistance at -10 V gate drive, 11–17 nC total gate charge, thermal resistance of 62.5 °C/W, and TSOP-6 surface-mount footprint optimized for space-constrained PCB layouts.

Technical Context

This device operates as a single P-channel silicon-based power switch with a body diode integrated into the die structure. Its gate threshold voltage range (-1.0 to -2.5 V) enables reliable turn-on with logic-level negative gate drive, while its low R_DS(on) and reduced Q_g minimize conduction and switching losses in DC-DC converter synchronous rectification and battery protection circuits.

The TSOP-6 package features an exposed drain pad and customized leadframe that lowers thermal resistance by 60% versus SOT-23, supporting higher current density (nearly 300% increase over SOT-23) without forced airflow. Its reverse recovery time (t_rr = 19–29 ns) and Q_rr (16–24 nC) are specified for body diode operation under controlled di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 3.3 V/5 V/12 V rail switching.
R_DS(on)	0.098 Ω @ V_GS = -10 V, I_D = -3.8 A - Low conduction loss enabling <100 mW dissipation at full rated current.
Q_g	11–17 nC - Total gate charge determines driver strength requirement and switching speed in PWM applications.
t_rr	19–29 ns - Fast body diode recovery supports high-frequency synchronous rectification without excessive ringing.
R_θJA	62.5 °C/W - Junction-to-ambient thermal resistance on 1-in² copper board; sets maximum continuous power at ambient temperature.
I_D (T_A = 25°C)	-3.8 A - Continuous drain current capability at room temperature with -10 V gate drive and no derating.
V_GS(th)	-1.0 to -2.5 V - Gate threshold range ensures robust turn-on with standard negative logic drivers and avoids false triggering.

Pinout & Package

IRF5805TRPBF is housed in a 6-pin TSOP-6 surface-mount package with exposed drain pad for enhanced thermal performance. The package measures 2.9 mm × 1.6 mm × 0.8 mm and is lead-free and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Five parallel drain terminals connected to internal die and exposed pad; primary current path and thermal conduction path to PCB.
6	Source (S)	Source terminal for return path; referenced to system ground in high-side switch configurations.
G	Gate (G)	Control input; requires negative voltage relative to source to turn on; low capacitance (C_iss = 511 pF) eases driving.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.098 Ω at -10 V gate drive reduces I²R losses by >40% vs. comparable SOT-23 P-MOSFETs in 3.3 V load switches.
Low gate charge	11–17 nC total gate charge enables fast switching with minimal driver IC power consumption in battery-operated devices.
TSOP-6 thermal design	60% lower R_θJA than SOT-23 allows 3× higher current handling on same PCB area without heatsinking.
Body diode performance	19–29 ns t_rr and 16–24 nC Q_rr support efficient freewheeling in buck converters and reverse-polarity protection.

Applications

Battery Protection Circuit

USB Power Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in lithium-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as bidirectional load switch with integrated body diode for charging path isolation.

Use Value: 0.098 Ω R_DS(on) limits voltage drop to <370 mV at 3.8 A, preserving battery runtime and reducing thermal stress during fault conditions.

Use Scenario: Hot-swap control and short-circuit protection for USB Type-A/B downstream ports.

IC Role / Device Role / Timing Role: Load switch enabling controlled power ramp-up and fast fault response via gate-controlled turn-off.

Use Value: 11–17 nC Q_g permits sub-microsecond turn-on/off with standard GPIO drivers, meeting USB 2.0 power sequencing timing requirements.

DC-DC Synchronous Rectifier

Industrial Sensor Node Power Management

Use Scenario: Secondary-side rectification in isolated flyback or forward converters for 3.3 V/5 V auxiliary rails.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency at light loads.

Use Value: Body diode t_rr ≤ 29 ns prevents shoot-through during dead-time transitions, enabling stable operation up to 500 kHz switching frequency.

Use Scenario: Low-duty-cycle power gating for wireless sensor nodes powered by coin-cell batteries.

IC Role / Device Role / Timing Role: Ultra-low-leakage P-MOSFET isolating MCU peripherals during sleep mode to extend battery life.

Use Value: IDSS ≤ -15 µA at V_DS = -24 V ensures <1 µA standby current per switch, critical for multi-year battery operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2305DS-T1-E3	R_DS(on) = 0.055 Ω @ -4.5 V (lower), but V_DS = -20 V (reduced voltage margin); Q_g = 5.5 nC (lower).	Suitable only for ≤20 V systems; better for ultra-low-voltage logic-driven switches where gate drive is limited to -4.5 V.	Select when gate drive is constrained to -4.5 V and voltage rating ≤20 V; avoid in 24 V or automotive battery backup designs.
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V, V_DS = -20 V, Q_g = 7.5 nC; smaller SOT-23-3 package with higher R_θJA (125 °C/W).	Limited to lower-power, lower-voltage applications due to reduced voltage rating and thermal capability.	Prefer for cost-sensitive, low-current (<1.5 A) consumer electronics where PCB space is tighter than thermal budget.

Compared with Si2305DS-T1-E3 and DMG2305UVT-7, IRF5805TRPBF provides superior voltage margin (-30 V), balanced gate drive flexibility (-4.5 V to -10 V), and best-in-class thermal performance in TSOP-6-making it optimal for industrial and battery management systems demanding reliability across wide temperature and voltage ranges.

Availability

IRF5805TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, DC-DC synchronous rectifiers, and industrial sensor node power management requiring stable component supply and long-term lifecycle support.

Supply support for IRF5805TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The IRF5805TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power switching in portable and battery-powered equipment where low R_DS(on), low Q_g, and thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRF5805TRPBF at 70°C ambient?

The maximum continuous drain current is -3.0 A at T_A = 70°C with V_GS = -10 V. This reflects thermal derating from the 25°C rating of -3.8 A, governed by the 0.02 W/°C linear derating factor and 1.28 W maximum power dissipation at 70°C ambient on a standard 1-in² copper board.

Can IRF5805TRPBF be driven directly from a 3.3 V microcontroller GPIO?

No-it is a P-channel MOSFET requiring a negative gate-to-source voltage to turn on. A 3.3 V GPIO alone cannot produce the required -4.5 V or -10 V gate drive. A level-shifting circuit or dedicated gate driver (e.g., TC4427 configured for high-side P-FET control) is necessary to achieve proper turn-on and avoid partial conduction.

Does IRF5805TRPBF have avalanche ruggedness rating?

Yes-the datasheet specifies repetitive avalanche energy rating (E_AS) of 30 mJ at T_J = 25°C. This enables limited operation in inductive switching applications with unclamped inductive loads, though external snubbers or clamping diodes are recommended for sustained reliability in such conditions.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 16–24 nC, measured at T_J = 25°C, I_F = -2.0 A, and di/dt = -100 A/µs. This value directly impacts switching loss and EMI in synchronous rectifier and freewheeling applications, and is significantly lower than standard Schottky diodes used in similar roles.

IRF5805TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 98mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 511 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(TSOP-6)

IRF5805TRPBF FAQ

1.How can I place an order for IRF5805TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5805TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5805TRPBF reliable?

The price and inventory of IRF5805TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5805TRPBF is usually 5 days.

3.What payment methods are accepted for IRF5805TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5805TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5805TRPBF?

IRF5805TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5805TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5805TRPBF?

For technical support, including IRF5805TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5805TRPBF requirements.

6.How does Aetrix verify that IRF5805TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF5805TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5805TRPBF meets industry standards.

7.What is the process for return or replacement of IRF5805TRPBF?

All IRF5805TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5805TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5805TRPBF part is unused and in its original packaging.

Return procedure for IRF5805TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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