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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5806

Name: IRF5806
Brand: Infineon Technologies
SKU: IRF5806
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5806

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: IRF5806.pdf

Description:: MOSFET P-CH 20V 4A MICRO6

Quantity:: RFQ Add To RFQ list

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Inventory:7,354

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Product details

Overview

IRF5806 from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TSOP-6 package, rated for -20 V V_DS, 86 mΩ R_DS(on) at V_GS = -4.5 V and I_D = -4.0 A, with ultra-low gate charge (Q_g = 8.3 nC typ.) and optimized for high-efficiency load switching in portable battery-powered systems.

For engineers reviewing the IRF5806 datasheet, IRF5806 pinout, IRF5806 application, or IRF5806 equivalent, key selection criteria include its -4.0 A continuous drain current at T_A = 25°C, -1.2 V diode forward voltage at I_S = -2.0 A, 116 ns typical reverse recovery time, and TSOP-6 thermal performance enabling >300% current handling versus SOT-23.

Technical Context

This device operates as a single P-channel power switch with integrated body diode, designed for low-voltage DC load control where fast turn-off (t_d(off) = 94 ns typ.), low conduction loss, and compact footprint are critical. Its gate threshold voltage range (-0.45 V to -1.2 V) ensures reliable enhancement-mode operation with standard logic-level drive.

The TSOP-6 package features a customized leadframe that reduces R_DS(on) by 60% versus comparable SOT-23 devices and delivers 62.5 °C/W junction-to-ambient thermal resistance on a 1-inch² copper board - enabling higher sustained current in space-constrained PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage battery-side switching
R_DS(on)	86 mΩ @ V_GS = -4.5 V, I_D = -4.0 A - Enables <172 mW conduction loss at full rated current
I_D (continuous)	-4.0 A @ T_A = 25°C - Supports sustained load currents up to 4 A without heatsink
Q_g	8.3 nC typ. - Reduces gate drive power and enables efficient PWM switching up to ~1 MHz
t_r/t_f	27 ns / 126 ns typ. - Fast edge rates minimize switching transition losses in DC-DC and load-switching circuits
V_SD	-1.2 V @ I_S = -2.0 A - Low body diode forward drop improves efficiency during reverse-current freewheeling
R_θJA	62.5 °C/W - Thermal performance validated on 1-inch² copper board, enabling predictable derating

Pinout & Package

Package: TSOP-6 (Thin Small Outline Package, 6-pin, surface-mount). Exposed drain pad for enhanced thermal dissipation. Pin 1–6 arranged as shown in top-view diagram: D, G, S, S, D, D.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 6	Drain (D)	High-current output node; internally connected to exposed thermal pad - must be soldered to large copper pour
2	Gate (G)	Control input; requires ≤ ±20 V drive; low Q_g enables direct microcontroller interface
3, 4	Source (S)	Return path for load current; referenced to system ground in high-side switch configurations

Key Features

Feature	Design Value
Ultra-low R_DS(on)	86 mΩ @ -4.5 V gate drive - cuts conduction loss by >60% vs. legacy SOT-23 P-MOSFETs
Low gate charge	8.3 nC total gate charge - reduces driver power and EMI during switching transitions
TSOP-6 thermal design	62.5 °C/W R_θJA on 1-inch² copper - supports 3× higher current density than SOT-23
Lead-free & halogen-free	RoHS-compliant construction - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1)
Fast body diode	116 ns t_rr, 90 nC Q_rr - minimizes reverse-recovery loss in synchronous rectification and bidirectional switching

Applications

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs using external sense resistor and controller IC.

IC Role / Device Role: High-side P-channel switch controlling battery discharge path; body diode blocks reverse current during fault conditions.

Use Value: 86 mΩ R_DS(on) limits voltage drop to <344 mV at 4 A, preserving battery runtime and reducing thermal stress.

Use Scenario: Hot-swap enable/disable of USB VBUS supply in portable docking stations and multi-port hubs.

IC Role / Device Role: Load switch isolating downstream USB peripherals from host power rail during insertion/removal.

Use Value: 94 ns t_d(off) and 126 ns t_f ensure clean, bounce-free power sequencing compliant with USB 2.0/3.0 specifications.

Power Bank Output Stage

Smartphone Backlight Dimming Control

Use Scenario: Output regulation and short-circuit protection in dual-cell 8.4 V power banks delivering 2.4 A to USB-A ports.

IC Role / Device Role: P-channel MOSFET acting as programmable current limiter and soft-start switch in constant-current output stage.

Use Value: -1.2 V V_SD at -2.0 A enables efficient reverse-current management during cable disconnect events.

Use Scenario: PWM-controlled dimming of white LED strings in smartphone displays using boost converter + linear current sink.

IC Role / Device Role: Low-side current sink switch modulating LED string return path under microcontroller PWM signal.

Use Value: 27 ns t_r ensures precise 100–1000 Hz dimming resolution without visible flicker or color shift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2305DS	R_DS(on) = 55 mΩ @ -4.5 V but rated only to -16 V V_DS; higher Q_g (12 nC)	Better conduction loss at lower voltage; less robust for 20 V transients	Prefer when system V_IN ≤ 16 V and minimal R_DS(on) dominates design priority
DMG2305U	R_DS(on) = 48 mΩ @ -4.5 V; same -20 V rating; slightly higher C_iss (650 pF)	Higher peak current capability (-4.8 A), but larger gate drive energy required	Choose when >4 A continuous current or tighter thermal margin is needed

Compared with Si2305DS and DMG2305U, the IRF5806 offers balanced trade-offs: superior voltage rating margin over Si2305DS and lower gate drive demand than DMG2305U, making it optimal for 12–20 V battery management where reliability and drive simplicity are prioritized.

Availability

IRF5806 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, power bank output stages, and smartphone backlight dimming control requiring stable component supply and RoHS-compliant packaging.

Supply support for IRF5806 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The HEXFET® Power MOSFET product line - including IRF5806 - was developed specifically for high-efficiency, space-constrained DC load switching in portable and battery-powered electronics.

FAQ

Can IRF5806 be driven directly by a 3.3 V microcontroller GPIO?

No. With a gate threshold voltage range of -0.45 V to -1.2 V and requiring -4.5 V for specified R_DS(on), IRF5806 needs negative gate drive relative to source. A dedicated P-channel gate driver or level-shifting circuit is required - direct 3.3 V GPIO connection will not achieve full enhancement.

What is the maximum safe continuous current at 70°C ambient temperature?

At T_A = 70°C, the datasheet specifies -3.3 A continuous drain current. This accounts for thermal derating: 2.0 W max power at 25°C drops to 1.3 W at 70°C, and R_DS(on) increases ~20% due to junction temperature rise, limiting usable current accordingly.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - with t_rr = 116 ns and Q_rr = 90 nC, the body diode supports moderate-frequency (<500 kHz) synchronous rectification. However, its -1.2 V forward voltage at -2.0 A is higher than discrete Schottky diodes, so efficiency gains depend on duty cycle and load current profile.

Does IRF5806 require a gate resistor for stability in switching applications?

A small gate resistor (10–100 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 87 pF) and PCB inductance. The datasheet's switching time test uses R_G = 6.0 Ω; omitting it may cause overshoot, shoot-through risk, or EMI in high-dV/dt environments.

IRF5806 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 86mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.4 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 594 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(TSOP-6)

IRF5806 FAQ

1.How can I place an order for IRF5806 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5806 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5806 reliable?

The price and inventory of IRF5806 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5806 is usually 5 days.

3.What payment methods are accepted for IRF5806?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5806 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5806?

IRF5806 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5806 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5806?

For technical support, including IRF5806 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5806 requirements.

6.How does Aetrix verify that IRF5806 is sourced from the original manufacturer or authorized distributors?

All IRF5806 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5806 meets industry standards.

7.What is the process for return or replacement of IRF5806?

All IRF5806 units undergo pre-shipment inspection (PSI). If there is an issue with IRF5806, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5806 part is unused and in its original packaging.

Return procedure for IRF5806:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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