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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF5806TRPBF

Name: IRF5806TRPBF
Brand: Infineon Technologies
SKU: IRF5806TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5806TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: IRF5806TRPBF.pdf

Description:: MOSFET P-CH 20V 4A MICRO6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF5806TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TSOP-6 package, rated for -20 V V_DS, 86 mΩ R_DS(on) at V_GS = -4.5 V and -4.0 A I_D, optimized for low-voltage load switching in portable battery-powered systems.

For engineers reviewing the IRF5806TRPBF datasheet, IRF5806TRPBF pinout, IRF5806TRPBF application, or IRF5806TRPBF equivalent, key selection criteria include its ultra-low on-resistance in compact surface-mount form, gate threshold voltage range (-0.45 V to -1.2 V), body diode reverse recovery performance (t_rr = 116–174 ns), and thermal resistance (R_θJA = 62.5 °C/W).

Technical Context

This device operates as a single P-channel power switch with depletion-free enhancement-mode behavior, requiring negative gate drive relative to source. Its low R_DS(on) enables high-efficiency operation at V_GS ≥ -4.5 V, while its 147 mΩ rating at -2.5 V supports partial-gate-drive applications such as battery protection circuits.

The integrated body diode exhibits V_SD = -1.2 V at -2.0 A and controlled reverse recovery (Q_rr = 90–135 nC), making it suitable for synchronous rectification and bidirectional current paths where diode conduction is unavoidable.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage; defines safe operating range in low-voltage DC systems.
R_DS(on)	86 mΩ @ V_GS = -4.5 V, I_D = -4.0 A - Enables <172 mW conduction loss at full rated current.
I_D (continuous)	-4.0 A @ T_A = 25°C - Sustained load current capability without heatsink on standard PCB.
Q_g	8.3–11.4 nC - Low gate charge reduces drive power and speeds switching in high-frequency PWM control.
R_θJA	62.5 °C/W - Junction-to-ambient thermal resistance on 1-inch² copper board; sets max ambient temperature for 150°C junction limit.
V_GS(th)	-0.45 to -1.2 V - Gate threshold range ensures reliable turn-on with logic-level negative drivers (e.g., microcontroller GPIO + level shifter).
t_rr	116–174 ns - Reverse recovery time of integrated body diode; critical for minimizing switching loss in freewheeling paths.

Pinout & Package

TSOP-6 package: 1.5 mm × 2.9 mm footprint, 0.95 mm height, exposed drain pad for thermal enhancement. Lead-free and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Five parallel internal drain connections - maximizes current handling and thermal dissipation via exposed pad.
6	Source (S)	Primary current return path; referenced for gate drive and system ground in high-side switch configurations.
G	Gate (G)	Control terminal; requires negative voltage relative to source to turn on; low Q_g enables fast edge rates with minimal driver strength.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	86 mΩ @ -4.5 V - Reduces conduction loss by ~60% vs. comparable SOT-23 P-MOSFETs, enabling higher efficiency in space-constrained battery management.
Low gate charge	8.3–11.4 nC - Allows direct drive from low-power MCUs with minimal external buffering, reducing BOM count in portable designs.
Enhanced thermal design	62.5 °C/W R_θJA - Achieves ~300% higher current capacity than SOT-23 at same board area due to optimized leadframe and exposed drain pad.
Robust body diode	t_rr = 116–174 ns, Q_rr = 90–135 nC - Supports reliable freewheeling in H-bridge and load-dump protection without external diodes.

Applications

Battery Protection Circuit

Load Switch for USB-Powered Devices

Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; activated only when fault conditions are cleared.

Use Value: 86 mΩ R_DS(on) limits voltage drop to <344 mV at 4 A, preserving battery runtime and enabling accurate current sensing.

Use Scenario: Controlled power-up/down sequencing for peripherals connected to USB 2.0/3.0 ports.

IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry from host VBUS; driven by USB controller GPIO.

Use Value: Low V_GS(th) (-0.45 to -1.2 V) allows direct interface with 3.3 V logic via simple inverter, eliminating level-shifter ICs.

Power Bank Output Stage

Industrial Sensor Node Power Gating

Use Scenario: Output regulation and overtemperature shutdown in portable power banks delivering 5 V/2 A.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier and output disconnect switch in boost converter topology.

Use Value: Fast t_rr (116 ns) and low Q_rr minimize switching loss during discontinuous conduction mode transitions.

Use Scenario: Duty-cycled power gating for ultra-low-power industrial sensors operating on coin-cell batteries.

IC Role / Device Role / Timing Role: Low-quiescent-current enable switch turning on sensor analog front-end only during measurement windows.

Use Value: Gate leakage <±100 nA ensures <1 µA total standby current, extending 10-year battery life targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS-T1-GE3	R_DS(on) = 115 mΩ @ -4.5 V; lower I_D rating (-2.7 A); smaller SOT-23 package	Lower current capacity limits use to ≤2 A loads; less thermal margin in continuous operation	Preferred for cost-sensitive, lower-current designs where PCB area is not constrained.
DMG1012UW-7	R_DS(on) = 90 mΩ @ -4.5 V; higher Q_g (13.5 nC); same TSOP-6 footprint	Higher gate charge increases driver requirements and switching loss at >100 kHz frequencies	Acceptable for DC or low-frequency switching; avoid in high-speed PWM applications.

Compared with Si2301DDS-T1-GE3 and DMG1012UW-7, IRF5806TRPBF delivers superior current density and thermal performance in TSOP-6, making it optimal for 4 A battery-switching applications where efficiency and reliability outweigh minor cost differences.

Availability

IRF5806TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB load switching, power bank output stages, and industrial sensor node power gating requiring stable component supply and long-term lifecycle support.

Supply support for IRF5806TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The HEXFET® Power MOSFET product line delivers high-efficiency, thermally robust discrete switches for battery-powered and space-constrained applications, emphasizing low R_DS(on), fast switching, and rugged packaging.

FAQ

What is the maximum continuous drain current for IRF5806TRPBF at 70°C ambient?

The maximum continuous drain current is -3.3 A at T_A = 70°C with V_GS = -4.5 V. This derating reflects thermal limitations of the TSOP-6 package on standard PCB layouts; actual current may increase with enhanced copper area or forced airflow.

Can IRF5806TRPBF be used in high-side switching configurations?

Yes - as a P-channel MOSFET, IRF5806TRPBF is inherently suited for high-side switching. Its -20 V V_DS rating and low R_DS(on) allow direct placement between supply rail and load, with gate driven negative relative to source using a simple level-shifting circuit.

Does IRF5806TRPBF have an integrated ESD protection diode?

No - IRF5806TRPBF does not include on-chip ESD protection diodes. External TVS or RC snubbers are recommended on gate and drain terminals in systems exposed to human contact or cable disconnection events per IEC 61000-4-2 Level 4.

What is the typical gate-to-source leakage current at room temperature?

Gate-to-source leakage is specified as ±100 nA maximum at V_GS = ±12 V and T_J = 25°C. This ultra-low leakage supports microampere-level standby current in always-on battery systems without compromising gate control integrity.

IRF5806TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 86mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.4 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 594 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(TSOP-6)

IRF5806TRPBF FAQ

1.How can I place an order for IRF5806TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5806TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5806TRPBF reliable?

The price and inventory of IRF5806TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5806TRPBF is usually 5 days.

3.What payment methods are accepted for IRF5806TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5806TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5806TRPBF?

IRF5806TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5806TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5806TRPBF?

For technical support, including IRF5806TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5806TRPBF requirements.

6.How does Aetrix verify that IRF5806TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF5806TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5806TRPBF meets industry standards.

7.What is the process for return or replacement of IRF5806TRPBF?

All IRF5806TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5806TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5806TRPBF part is unused and in its original packaging.

Return procedure for IRF5806TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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