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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF60DM206ATMA1

Name: IRF60DM206ATMA1
Brand: Infineon Technologies
SKU: IRF60DM206ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF60DM206ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric ME

Datasheet:: IRF60DM206ATMA1.pdf

Description:: FET N-CHANNEL

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF60DM206ATMA1 from Infineon Technologies is a 60 V, 130 A N-channel DirectFET® ME power MOSFET optimized for high-current synchronous rectification and half/full-bridge motor drive topologies. It delivers 2.2 mΩ typ. R_DS(on) at V_GS = 10 V, supports 530 A pulsed drain current, and features enhanced body diode dv/dt (8.5 V/ns) and di/dt capability for robust BLDC and brushed motor control in battery-powered inverters.

For engineers reviewing the IRF60DM206ATMA1 datasheet, IRF60DM206ATMA1 pinout, IRF60DM206ATMA1 application, or IRF60DM206ATMA1 equivalent, key selection criteria include its 1.3 °C/W R_θJC, 81 mJ single-pulse avalanche energy, 133 nC total gate charge, and DirectFET® ME package thermal performance in high-density DC/DC converters and OR-ing power switches.

Technical Context

This MOSFET employs a trench-gate silicon process with optimized cell pitch and deep-trench body diode design to achieve low R_DS(on) while maintaining high dv/dt immunity (8.5 V/ns) and 47.5 ns reverse recovery time. Its gate threshold voltage (2.1–3.7 V) enables reliable turn-on with standard 5 V logic drivers.

The device is characterized for unclamped inductive switching with 1 mH and 25 µH test inductors, supporting repetitive avalanche operation up to 150 °C junction temperature when thermal impedance remains within Z_thJC limits. C_oss eff. (ER) is specified at 670 pF for energy-related output capacitance modeling in resonant LLC designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage for 48 V bus systems with 20 % margin
R_DS(on) typ.	2.2 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1.8 W conduction loss at 90 A continuous
I_D @ T_C = 25 °C	130 A - Sustains full-load current in compact heatsinked motor drives
Q_g max	200 nC - Determines gate driver peak current requirement (~2 A for 100 ns rise)
E_AS single pulse	81 mJ - Supports safe unclamped inductive switching in half-bridge snubberless operation
dv/dt rating	8.5 V/ns - Prevents spurious turn-on during fast voltage transients in high-side switching
R_θJC	1.3 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance

Pinout & Package

IRF60DM206ATMA1 uses the DirectFET® ME surface-mount package: dual-side cooling, copper top-drain thermal pad, and three-terminal layout (Drain, Gate, Source) with exposed metal on both top and bottom for PCB-integrated thermal management.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain	Primary high-current path and main thermal conduction surface to heatsink
Bottom Metal Pad	Source	Low-impedance return path and secondary thermal interface to PCB ground plane
Center Solder Pad	Gate	Control terminal with 0.8 Ω internal gate resistance limiting ringing and EMI

Key Features

Feature	Design Value
Enhanced body diode dv/dt immunity	8.5 V/ns at T_J = 150 °C - Eliminates need for external di/dt snubbers in synchronous rectifiers
Fully characterized avalanche SOA	154 mJ E_AS (1 mH test) - Enables reliable operation under short-circuit and inductive load dump
Low effective output capacitance	C_oss eff. (ER) = 670 pF - Reduces switching loss in 100–500 kHz resonant DC/DC converters
Thermally optimized package	R_θJC = 1.3 °C/W - Allows >90 W dissipation with 70 °C case-to-ambient delta
Lead-free & RoHS compliant	Meets IPC-J-STD-020D reflow profile - Compatible with standard lead-free assembly processes

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: 24–48 V battery-powered power tools with H-bridge direction control and PWM speed regulation.

IC Role / Device Role / Timing Role: High-side and low-side switch in discrete half-bridge configuration handling 100 A peak motor current.

Use Value: 2.2 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy TO-220 MOSFETs, extending runtime per charge cycle.

Use Scenario: 3-phase inverter for e-bike controllers using six discrete MOSFETs per phase leg.

IC Role / Device Role / Timing Role: Low-side switch with fast body diode recovery (47.5 ns) enabling 20 kHz PWM without shoot-through risk.

Use Value: 8.5 V/ns dv/dt rating prevents false triggering during high dV/dt commutation edges in trapezoidal control.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switching in isolated 48 V input telecom DC/DC modules delivering 12 V/100 A output.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes to reduce forward voltage drop and improve efficiency.

Use Value: 1.2 V V_SD at 80 A and 2.2 mΩ R_DS(on) cut conduction losses by 60 % compared to 40 V Schottky diodes.

Use Scenario: Redundant 12 V power supply backplane where two supplies feed common bus via ideal diode control.

IC Role / Device Role / Timing Role: Low-loss OR-ing switch with fast turn-off (<30 ns fall time) minimizing cross-conduction during supply switchover.

Use Value: 530 A pulsed current rating supports 2× inrush current handling during hot-swap events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF60DM216ATMA1	Same package, 60 V, but 2.9 mΩ R_DS(on) max at 10 V - higher conduction loss, lower cost	Acceptable for lower-current (<60 A) BLDC inverters where thermal margin allows	Select when BOM cost sensitivity outweighs 15 % efficiency penalty at full load
IPB017N06N3G	60 V, 1.7 mΩ R_DS(on), PG-HSOF-8 package - lower R_DS(on) but no top-side cooling, 2.1 °C/W R_θJC	Better for PCB-limited space but requires larger heatsink area due to inferior thermal resistance	Prefer when board real estate is constrained but thermal solution can accommodate higher R_θJC

Compared with IRF60DM216ATMA1, the IRF60DM206ATMA1 delivers 25 % lower conduction loss at 80 A; versus IPB017N06N3G, it offers 40 % better thermal resistance despite slightly higher R_DS(on), making it superior for high-power density motor drives with dual-side cooling.

Availability

IRF60DM206ATMA1 is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across industrial, automotive, and renewable energy programs.

Supply support for IRF60DM206ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™ family of high-current trench-MOSFETs designed specifically for high-efficiency motor control, DC/DC conversion, and redundant power switching in thermally demanding environments.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRF60DM206ATMA1 supports 82 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, and assumes proper PCB copper area and heatsinking per the recommended footprint in AN-994.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-noise environments?

No - the device has a gate threshold voltage range of 2.1–3.7 V and is fully controllable with 0 V to +10 V gate drive. Its 8.5 V/ns dv/dt immunity and 20 V maximum V_GS rating eliminate the need for negative turn-off bias in typical motor drive or converter applications, simplifying gate driver design.

Can IRF60DM206ATMA1 be used in parallel configurations without current-sharing resistors?

Yes - its positive temperature coefficient of R_DS(on) (see Fig 6) ensures inherent current sharing above ~70 °C junction temperature. For room-temperature startup, matching gate drive loop inductance and layout symmetry is sufficient; no external source resistors are required for stable parallel operation in high-current inverters.

What is the recommended gate resistor value for hard-switching at 100 kHz in a half-bridge?

A 2.7 Ω gate resistor is validated in the datasheet for switching characterization (td(on), tr, td(off), tf). At 100 kHz, this value balances switching loss (133 nC Q_g) and EMI, yielding ~32 ns rise time and ~30 ns fall time. Lower values increase peak gate current (>2 A) and ringing; higher values raise switching losses disproportionately due to Miller plateau dwell time.

IRF60DM206ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: DirectFET®

Package/Case:: DirectFET™ Isometric ME

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric ME

IRF60DM206ATMA1 FAQ

1.How can I place an order for IRF60DM206ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF60DM206ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF60DM206ATMA1 reliable?

The price and inventory of IRF60DM206ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF60DM206ATMA1 is usually 5 days.

3.What payment methods are accepted for IRF60DM206ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF60DM206ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF60DM206ATMA1?

IRF60DM206ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF60DM206ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF60DM206ATMA1?

For technical support, including IRF60DM206ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF60DM206ATMA1 requirements.

6.How does Aetrix verify that IRF60DM206ATMA1 is sourced from the original manufacturer or authorized distributors?

All IRF60DM206ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF60DM206ATMA1 meets industry standards.

7.What is the process for return or replacement of IRF60DM206ATMA1?

All IRF60DM206ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF60DM206ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF60DM206ATMA1 part is unused and in its original packaging.

Return procedure for IRF60DM206ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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