Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6201PBF

Name: IRF6201PBF
Brand: Infineon Technologies
SKU: IRF6201PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF6201PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF6201PBF.pdf

Description:: MOSFET N-CH 20V 27A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,793

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF6201PBF from Infineon Technologies is a 20 V, 27 A, 2.45 mΩ (at V_GS = 4.5 V) N-channel Trench MOSFET in SO-8 package, designed for low-voltage, high-current load switching and OR-ing applications in battery-powered systems and DC motor inverters.

For engineers reviewing the IRF6201PBF datasheet, IRF6201PBF pinout, IRF6201PBF application, or IRF6201PBF equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, pulsed drain current capability (110 A), thermal resistance (R_θJA = 50 °C/W), and SO-8 footprint compatibility with multi-vendor board designs.

Technical Context

This MOSFET employs Infineon's Trench Power MOSFET technology to achieve ultra-low on-resistance (2.45 mΩ max @ 4.5 V) while maintaining robust 20 V V_DS rating and fast switching performance (Q_g = 130 nC typical). Its gate threshold voltage (0.5–1.1 V) enables direct logic-level drive from 3.3 V microcontrollers.

The integrated body diode supports synchronous rectification in half-bridge configurations, with reverse recovery charge (Q_rr) of 180–270 nC and trr of 82–120 ns under specified conditions. Thermal design is supported by validated R_θJL = 20 °C/W and R_θJA = 50 °C/W (SO-8 on 1"² copper).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 12 V nominal bus systems with margin
R_DS(on) @ V_GS = 4.5 V	2.45 mΩ max - Enables ≤65 mW conduction loss at 27 A continuous
I_D @ T_A = 25°C	27 A - Sustained current capability with SO-8 package and standard PCB copper
Q_g	130 nC typical - Determines gate driver power requirement and switching speed at 4.5 V drive
V_GS(th)	0.5–1.1 V - Ensures turn-on with 3.3 V logic without level-shifting circuitry
R_θJA	50 °C/W - Defines thermal rise above ambient for SO-8 layout on 1"² copper
Body Diode V_SD	1.2 V max - Limits forward conduction loss during freewheeling in H-bridge topologies

Pinout & Package

IRF6201PBF is housed in an industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pad for enhanced thermal performance. Pin numbering follows standard SO-8 convention (pin 1 = G, pin 2 = S, pin 3 = S, pin 4 = S, pin 5 = D, pin 6 = D, pin 7 = D, pin 8 = D).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0.5–1.1 V threshold and 4.5 V logic-level drive
Pins 2, 3, 4 (S)	Source	Common source node; three pins bonded internally for low-inductance, high-current return path
Pins 5, 6, 7, 8 (D)	Drain	Power output node; four pins connected to exposed drain pad for thermal and current handling

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	2.45 mΩ max - Reduces I²R losses in battery-switching and motor-drive paths
Logic-level gate drive	V_GS(th) 0.5–1.1 V - Eliminates need for gate driver ICs in 3.3 V control systems
High pulsed current rating	I_DM = 110 A - Supports short-duration motor startup surges and hot-swap inrush
Robust body diode	Q_rr = 180–270 nC - Enables reliable freewheeling in half-bridge and synchronous rectifier use
RoHS-compliant SO-8	Lead-free, halogen-free - Meets environmental compliance requirements without derating

Applications

Battery OR-ing Circuit

DC Motor Inverter Half-Bridge

Use Scenario: Dual-battery redundancy system where two Li-ion packs feed a common 12 V rail without backfeed.

IC Role / Device Role / Timing Role: Low-side OR-ing switch controlling current direction based on battery voltage priority.

Use Value: 2.45 mΩ R_DS(on) limits voltage drop to <100 mV at 25 A, preserving battery efficiency and runtime.

Use Scenario: 12 V brushed DC motor controller using half-bridge topology with PWM switching.

IC Role / Device Role / Timing Role: High-current low-side switch synchronously commutated with upper MOSFET.

Use Value: 130 nC Q_g enables 20 kHz PWM operation with minimal gate drive power and reduced switching loss.

Hot-Swap Load Switch

System Power Sequencing

Use Scenario: Insertion of a peripheral module into a live 12 V backplane with inrush current limiting.

IC Role / Device Role / Timing Role: Main pass element controlled via external gate resistor and RC timing network.

Use Value: 27 A continuous rating and 110 A pulsed rating accommodate 500 ms inrush transients without thermal shutdown.

Use Scenario: Controlled power-up sequence for FPGA + memory subsystem requiring staggered VCCIO/VCCINT ramp.

IC Role / Device Role / Timing Role: Precision-controlled high-side or low-side enable switch with soft-start gate bias.

Use Value: Gate threshold spread (0.5–1.1 V) allows predictable turn-on timing across temperature and process variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	R_DS(on) = 2.3 mΩ @ 4.5 V; Q_g = 125 nC; V_GS(th) = 0.6–1.2 V	Nearly identical SO-8 footprint and thermal profile; slightly lower R_DS(on)	Preferred when marginal conduction loss reduction is critical and gate drive margin allows higher V_GS(th) tolerance.
IPB020N04LGATMA1	R_DS(on) = 2.0 mΩ @ 4.5 V; TO-263-7 package; R_θJA = 35 °C/W	Higher current density but requires different PCB layout and thermal pad design	Select only when SO-8 thermal limit is exceeded and board space allows TO-263 rework.

Compared with Si7850DP-T1-GE3 and IPB020N04LGATMA1, IRF6201PBF offers balanced trade-offs between SO-8 manufacturability, 27 A continuous rating, and 2.45 mΩ conduction loss-making it optimal for cost-sensitive, space-constrained battery and motor control boards where multi-source compatibility matters.

Availability

IRF6201PBF is available at Aetrix Electronics and suitable for battery OR-ing circuits, DC motor inverters, and hot-swap load switches requiring stable component supply and long-term industrial availability.

Supply support for IRF6201PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with leadership in silicon and wide-bandgap power devices.

The IRF6201PBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, low-voltage switching in portable and battery-powered equipment where gate drive simplicity and thermal reliability are critical.

FAQ

Is IRF6201PBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 0.5–1.1 V and guaranteed turn-on at V_GS = 4.5 V, IRF6201PBF fully supports direct drive from 3.3 V GPIO outputs. Its low Q_g (130 nC typical) ensures fast switching without excessive gate driver loading, and the SO-8 layout minimizes parasitic inductance for clean edge transitions.

What is the maximum continuous current at 70°C ambient?

At T_A = 70°C, the continuous drain current is rated at 20 A (per Absolute Maximum Ratings table). This accounts for thermal derating based on R_θJA = 50 °C/W and T_J(max) = 150°C, assuming standard SO-8 mounting on 1 inch² copper. Derating curves in Fig 9 confirm linear reduction from 27 A at 25°C to 20 A at 70°C.

Does IRF6201PBF have avalanche ruggedness rating?

No. The datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (E_AS) ratings. It is intended for clamped inductive loads (e.g., motor windings with freewheeling diodes or synchronous rectification) and should not be operated in unclamped avalanche mode without external protection circuitry.

Can IRF6201PBF replace IRF6201TRPbF in the same PCB footprint?

Yes. Both IRF6201PBF (tube/bulk) and IRF6201TRPbF (tape-and-reel) share identical SO-8 package dimensions, pinout, and electrical specifications. The only difference is packaging format-no layout or schematic changes are required when substituting between these orderable variants.

IRF6201PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 2.45mOhm @ 27A, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 195 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 8555 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF6201PBF FAQ

1.How can I place an order for IRF6201PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6201PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6201PBF reliable?

The price and inventory of IRF6201PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6201PBF is usually 5 days.

3.What payment methods are accepted for IRF6201PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6201PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6201PBF?

IRF6201PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6201PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6201PBF?

For technical support, including IRF6201PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6201PBF requirements.

6.How does Aetrix verify that IRF6201PBF is sourced from the original manufacturer or authorized distributors?

All IRF6201PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6201PBF meets industry standards.

7.What is the process for return or replacement of IRF6201PBF?

All IRF6201PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6201PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6201PBF part is unused and in its original packaging.

Return procedure for IRF6201PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…